HAF2007L

HAF2007(L), HAF2007(S) Silicon N Channel MOS FET Series Power Switching REJ03G1137-0400 (Previous: ADE-208-706B) Rev.4.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 2, 4 D 1 G Temperature Sensing Circuit Gate resistor Latch Circuit Gate Shutdown Circuit S 3 Rev.4.00 Sep 07, 2005 page 1 of 8 HAF2007(L), HAF2007(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS VGSS ID Note 1 ID (pulse) IDR Note 2 Pch Tch Tstg Value 60 16 –2.5 5 10 5 20 150 –55 to +150 Unit V V V A A A W °C °C Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH (sd) 1 IIH (sd) 2 Tsd VOP Min 3.5 — — — — — — — 3.5 Typ — — — — — 0.8 0.35 175 — Max — 1.2 100 50 1 — — — 12 Unit V V µA µA µA mA mA °C V Test Conditions Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature Rev.4.00 Sep 07, 2005 page 2 of 8 HAF2007(L), HAF2007(S) Electrical Characteristics (Ta = 25°C) Item Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol ID1 ID2 V (BR) DSS V (BR) GSS V (BR) GSS IGSS1 IGSS2 IGSS3 IGSS4 Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down operation time Note4 Min 4 — 60 16 –2.5 — — — — — — — 1.0 4 — — — — — — — — — — — Typ — — — — — — — — — 0.8 0.35 — — 7.5 73 55 270 2.8 12.4 15 11 0.9 140 1.1 0.57 Max — 10 — — — 100 50 1 –100 — — 10 2.25 — 120 75 — — — — — — — — — Unit A mA V V V µA µA µA µA mA mA µA V S mΩ mΩ pF µs µs µs µs V ns ms ms Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 IG = 300 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2.5 A, VDS = 10 V Note 3 ID = 2.5 A, VGS = 4 V ID = 2.5 A, VGS = 10 V VDS = 10 V, VGS = 0 f = 1 MHz ID = 2.5 A VGS = 5 V RL = 12 Ω IF = 5 A, VGS = 0 IF = 5 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 16 V VGS = 5 V, VDD = 24 V Note 3 IGS (op) 1 IGS (op) 2 IDSS VGS (off) |yfs| RDS (on) RDS (on) Coss td (on) tr td (off) tf VDF trr tos1 tos2 Note 3 Notes: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. Rev.4.00 Sep 07, 2005 page 3 of 8 HAF2007(L), HAF2007(S) Main Characteristics Power vs. Temperature Derating 40 500 200 Thermal shut down Operation area Maximum Safe Operation Area Pch (W) ID (A) Drain Current 30 100 50 20 10 5 Channel Dissipation 20 10 1 0 µs 10 0 0 50 100 150 200 PW m s DC = 10 2 Operation in (T O c = pe m this area is s 2 ra 1 limited by RDS (on) 5°C tion ) 0.5 Ta = 25°C 0.3 0.3 0.5 1 2 5 10 20 50 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 25 10 V Typical Transfer Characteristics 5 ID (A) ID (A) 20 8V 6V 5V Pulse Test 4 Tc = –25°C 25°C 75°C 15 4V 3 Drain Current Drain Current 10 VGS = 3.5 V 2 5 1 VDS = 10 V Pulse Test 0 0 2 4 6 8 10 0 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 0.25 Pulse Test 0.20 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) 500 200 100 50 VGS = 4 V 0.15 ID = 2 A 0.10 1A 0.05 0.5 A 10 V 20 Pulse Test 10 0.1 0.2 0.5 0 0 2 4 6 8 10 1 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.4.00 Sep 07, 2005 page 4 of 8 HAF2007(L), HAF2007(S) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 0.20 Pulse Test 100 50 Tc = –25°C Static Drain to Source on State Resistance RDS (on) (mΩ) Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test 0.16 0.5 A, 1 A 0.12 VGS = 4 V ID = 2 A 0.04 0.5 A, 1 A 10 V ID = 2 A 20 10 5 25°C 75°C 0.08 2 1 0.5 0 –40 0 40 80 120 160 1 2 5 10 20 50 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 1000 500 100 50 Switching Characteristics VGS = 5 V, VDD = 30 V PW = 300 µs, duty ≤ 1 % Switching Time t (ns) 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C 1 2 5 10 20 50 20 10 5 td(off) tf td(on) tr 20 10 0.5 2 1 0.5 1 2 5 10 20 50 Reverse Drain Current IDR (A) Drain Current ID (A) Reverse Drain Current vs. Source to Drain Voltage 5 10000 Pulse Test 3000 1000 300 100 30 10 0 0.4 0.8 1.2 1.6 2.0 0 Typical Capacitance vs. Drain to Source Voltage Reverse Drain Current IDR (A) 3 VGS = 5 V 0V Capacitance C (pF) 4 Coss 2 1 VGS = 0 f = 1 MHz 10 20 30 40 50 0 Source to Drain Voltage VSD (V) Drain to Source Voltage VDS (V) Rev.4.00 Sep 07, 2005 page 5 of 8 HAF2007(L), HAF2007(S) Gate to Source Voltage vs. Shutdown Time of Load-Short Test VGS (V) 12 10 8 6 4 2 0 10 µ VDD = 16 V Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) 200 180 Gate to Source Voltage 160 24 V 140 120 ID = 0.5 A 100 0 2 4 6 8 10 100 µ 1m 10 m 100 m Shutdown Time of Load-Short Test PW (S) Gate to Source Voltage VGS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 6.25°C/W, Tc = 25°C PDM ul se 0.05 0.03 D= PW T 0.01 10 µ 1s 2 0.0 1 0.0 PW T ho tp 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Monitor D.U.T. RL Vout Monitor Vin Vout 10% 10% 90% 10% Vin 5V 50 Ω VDD = 30 V td(on) 90% tr 90% td(off) tf Rev.4.00 Sep 07, 2005 page 6 of 8 HAF2007(L), HAF2007(S) Package Dimensions JEITA Package Code  RENESAS Code PRSS0004ZD-B Package Name DPAK(L)-(2) / DPAK(L)-(2)V MASS[Typ.] 0.42g Unit: mm 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 4.7 ± 0.5 16.2 ± 0.5 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 5.5 ± 0.5 1.2 ± 0.3 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Package Name DPAK(S) / DPAK(S)V MASS[Typ.] 0.28g Unit: mm 1.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 (0.1) (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) 5.5 ± 0.5 1.2 Max 0 – 0.25 (1.2) 2.5 ± 0.5 1.0 Max. 2.29 ± 0.5 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 Rev.4.00 Sep 07, 2005 page 7 of 8 (5.1) HAF2007(L), HAF2007(S) Ordering Information Part Name HAF2007-90L HAF2007-90S HAF2007-90STL HAF2007-90STR Quantity Max: 100 pcs/sack Max: 100 pcs/sack 3000 pcs/Reel 3000 pcs/Reel Sack Sack Embossed tape Embossed tape Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 8 of 8 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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