HAT1038R_09

Preliminary HAT1038R, HAT1038RJ Silicon P Channel Power MOS FET High Speed Power Switching Features • • • • For Automotive Application (at Type Code "J") Low on-resistance Capable of 4 V gate drive High density mounting REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 65 87 3 12 4 2 G 4 G 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain S1 MOS1 S3 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1038R HAT1038RJ Avalanche energy HAT1038R HAT1038RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 4 Note 1 Value –60 ±20 –3.5 –28 –3.5 — –3.5 — 1.05 2 3 150 –55 to +150 Unit V V A A A — A — mJ W W °C °C EAR Note 4 Pch Note 2 Pch Tch Tstg Note 3 PW ≤ 10 μs, duty cycle ≤ 1% 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 1 of 7 HAT1038R, HAT1038RJ Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak voltage Gate to source leak current HAT1038R Zero gate voltage drain current HAT1038RJ Zero gate voltage drain current HAT1038R HAT1038RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS IDSS IDSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min –60 ±20 — — — — — –1.2 — — 3 — — — — — — — — — Typ — — — — — — — — 0.12 0.16 4.5 600 290 75 11 30 100 55 –0.98 70 Max — — ±10 –1 –0.1 — –10 –2.2 0.15 0.23 — — — — — — — — –1.28 — Unit V V μA μA μA μA μA V Ω Ω S pF pF pF ns ns ns ns V ns Test Conditions ID = –10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –48 V, VGS = 0 Ta = 125°C VDS = –10 V, ID = –1 mA ID = –2 A, VGS = –10 V Note 5 ID = –2 A, VGS = –4 V Note 5 ID = –2 A, VDS = –10 V Note 5 VDS = –10 V VGS = 0 f = 1 MHz VGS = –10 V, ID = –2 A, VDD ≅ –30 V IF = –3.5 A, VGS = 0 Note 5 IF = –3.5 A, VGS = 0 diF/dt = 50 A/μs REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 2 of 7 HAT1038R, HAT1038RJ Preliminary Main Characteristics Power vs. Temperature Derating 4.0 Maximum Safe Operation Area –100 –30 10 μs Pch (W) ID (A) Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3.0 –10 –3 –1 –0.3 –0.1 DC 10 0μ Channel Dissipation 2.0 1 Dr 1.0 ive Op er at ion Drain Current PW s = Op 10 era ms tio n( Operation in PW N o ≤ 1 te 6 this area is 0s limited by RDS (on) ) 1m s 2 Dr ive Op er at ion 0 0 50 100 150 200 –0.03 Ta = 25°C 1 shot pulse –0.01 –1 –0.1 –0.3 –3 –10 –30 –100 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) Note 6: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Output Characteristics –10 –10 V –5 V –4 V –10 –3.5 V Pulse Test –6 Typical Transfer Characteristics ID (A) ID (A) –8 –8 VDS = 10 V Pulse Test –6 –3 V Drain Current –4 Drain Current –4 Tc = 75°C –2 –25°C 0 0 25°C –2 VGS = –2.5 V 0 0 –2 –4 –6 –8 –10 –1 –2 –3 –4 –5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) –0.5 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 VGS = –4 V –10 V –0.4 –0.3 ID = –2 A –0.2 –1 A –0.1 –0.5 A 0.2 0.1 0.05 0.02 0.01 –0.1 –0.3 0 0 –4 –8 –12 –16 –20 –1 –3 –10 –30 –100 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 3 of 7 HAT1038R, HAT1038RJ Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 0.5 Pulse Test 0.4 ID = –2 A 0.3 –0.5 A 0.2 VGS = –4 V –2 A 0.1 –10 V 0 –40 0 40 80 120 160 –0.5 A, –1 A –1 A 20 10 Tc = –25°C 5 25°C 2 1 0.5 75°C Preliminary Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) VDS = 10 V Pulse Test 0.2 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 2000 1000 VGS = 0 f = 1 MHz Ciss 500 200 100 50 20 10 0 –10 –20 –30 –40 –50 Crss Coss Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 100 50 20 10 5 –0.1 –0.2 di / dt = 50 A / μs VGS = 0, Ta = 25°C –0.5 –1 –2 –5 –10 Capacitance C (pF) 200 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) VDD = –10 V –25 V –50 V VGS –40 VDS VDD = –50 V –25 V –10 V –8 Switching Characteristics VGS (V) 0 1000 300 td(off) 100 tf 30 10 3 V = –10 V, V = –30 V GS DD PW = 5 μs, duty ≤ 1 % 1 –0.5 –1 –2 –0.1 –0.2 tr td(on) 0 –20 –4 Drain to Source Voltage –60 –12 –80 ID = –3.5 A 0 8 16 24 32 –16 –100 –20 40 Gate to Source Voltage Switching Time t (ns) –5 –10 Gate Charge Qg (nc) Drain Current ID (A) REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 4 of 7 HAT1038R, HAT1038RJ Reverse Drain Current vs. Source to Drain Voltage –10 Preliminary Maximum Avalanche Energy vs. Channel Temperature Derating 2.5 IAP = –3.5 A VDD = –25 V L = 100 μH duty < 0.1 % Rg ≥ 50 Ω –8 Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) 2.0 –6 –10 V VGS = 0, 5 V –5 V 1.5 –4 1.0 –2 Pulse Test 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 0.5 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 θch – f (t) = γ s (t) • θch – f θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) lse PDM PW T 1m 10 m 100 m 1 10 100 D= 0.001 1 o sh PW T tp u 0.0001 10 μ 100 μ 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 θch – f (t) = γ s (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) lse PDM PW T 1m 10 m 100 m 1 10 100 D= 0.001 1s t ho PW T pu 0.0001 10 μ 100 μ 1000 10000 Pulse Width PW (S) REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 5 of 7 HAT1038R, HAT1038RJ Avalanche Test Circuit Avalanche Waveform 1 • L • IAP2 • 2 VDSS VDSS – VDD Preliminary VDS Monitor L IAP Monitor EAR = V(BR)DSS IAP VDD ID VDS Rg D.U.T Vin –15 V 50 Ω VDD 0 Switching Time Test Circuit Vin Vin Monitor D.U.T. RL Vout Monitor Switching Time Waveform 10% 90% 90% 90% Vin –10 V 50 Ω VDD = –30 V Vout td(on) 10% tr td(off) 10% tf REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 6 of 7 HAT1038R, HAT1038RJ Preliminary Package Dimensions Package Name SOP-8 JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g *1 D F 8 5 *2 E HE bp Index mark 1 Z e 4 * 3 bp xM c Terminal cross section (Ni/Pd/Au plating) NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Symbol Dimension in Millimeters Min L1 L D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Nom Max 4.90 5.3 3.95 A 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 A1 y Detail F 8° 0° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part Name HAT1038R-EL-E HAT1038RJ-EL-E Quantity 2500 pcs 2500 pcs Taping Taping Shipping Container REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 7 of 7 Sales Strategic Planning Div. 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