DATASHEET
ISL6615A
FN6608
Rev 2.00
April 13, 2012
High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
The ISL6615A is a high-speed MOSFET driver optimized to
drive upper and lower power N-Channel MOSFETs in a
synchronous rectified buck converter topology. This driver,
combined with an Intersil Digital or Analog multiphase PWM
controller, forms a complete high frequency and high
efficiency voltage regulator.
The ISL6615A drives both upper and lower gates over a range
of 4.5V to 13.2V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs
between gate charge and conduction losses.
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- LGATE Detection
- Auto-zero of rDS(ON) Conduction Offset Effect
• Adjustable Gate Voltage for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
The ISL6615A features 6A typical sink current for the low-side
gate driver, enhancing the lower MOSFET gate hold-down
capability during PHASE node rising edge, preventing power
loss caused by the self turn-on of the lower MOSFET due to the
high dV/dt of the switching node.
• Bootstrap Capacitor Overcharging Prevention
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs from
conducting simultaneously and to minimize the dead-time.
The ISL6615A includes an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at which
the PHASE node is connected to the gate of the low side
MOSFET (LGATE). The output voltage of the converter is then
limited by the threshold of the low side MOSFET, which
provides some protection to the load if the upper MOSFET(s) is
shorted.
• Support 5V PWM Input Logic
The ISL6615A also features an input that recognizes a
high-impedance state, working together with Intersil
multiphase PWM controllers to prevent negative transients on
the controlled output voltage when operation is suspended.
This feature eliminates the need for the Schottky diode that
may be utilized in a power system to protect the load from
negative output voltage damage.
• Supports High Switching Frequency (up to 1MHz)
- 6A LGATE Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Tri-State PWM Input for Safe Output Stage Shutdown
• Tri-State PWM Input Hysteresis for Applications with Power
Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper PAD for Better Heat Spreading
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-free (RoHS compliant)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel® and AMD® Microprocessors
• High Current Low-Profile DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
• Synchronous Rectification for Isolated Power Supplies
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB389 “PCB Land Pattern Design and
Surface Mount Guidelines for QFN Packages”
FN6608 Rev 2.00
April 13, 2012
Page 1 of 13
ISL6615A
Block Diagram
ISL6615A
(UVCC)
BOOT
VCC
UGATE
PRE-POR OVP
FEATURES
+5V
10k
POR/
PWM
PHASE
SHOOTTHROUGH
PROTECTION
(LVCC)
PVCC
UVCC = PVCC
CONTROL
LOGIC
8k
LGATE
GND
SUBSTRATE RESISTANCE
FOR DFN DEVICES, THE PAD ON THE BOTTOM SIDE OF
THE PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND.
PAD
Typical Application - 2 Channel Converter
VIN
+7V TO +13.2V
+5V
+5V
FB
COMP
VCC
VCC
VSEN
PWM1
UGATE
PWM
ISL6615A
PWM2
PGOOD
BOOT
PVCC
PWM
CONTROL
(ISL63xx
OR ISL65xx)
PHASE
LGATE
GND
ISEN1
VID
(OPTIONAL)
ISEN2
+VCORE
+7V TO +13.2V
PVCC
VIN
BOOT
FS/EN
GND
VCC
UGATE
PWM
ISL6615A
PHASE
LGATE
GND
THE ISL6615A CAN SUPPORT 5V PWM INPUT
FN6608 Rev 2.00
April 13, 2012
Page 2 of 13
ISL6615A
Ordering Information
PART NUMBER
(Notes 1, 2, 3)
PART
MARKING
TEMP.
RANGE (°C)
PACKAGE
(Pb-free)
PKG.
DWG. #
ISL6615ACBZ
6615A CBZ
0 to +70
8 Ld SOIC
M8.15
ISL6615ACRZ
615A
0 to +70
10 Ld 3x3 DFN
L10.3x3
ISL6615AIBZ
6615A IBZ
-40 to +85
8 Ld SOIC
M8.15
ISL6615AIRZ
15AI
-40 to +85
10 Ld 3x3 DFN
L10.3x3
ISL6615AFRZ
15AF
-40 to +125
10 Ld 3x3 DFN
L10.3x3
NOTES:
1. Add “-T*” suffix for tape and reel. Please refer to TB347 for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte
tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pbfree products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), please see device information page for ISL6615A. For more information on MSL please see techbrief TB363.
Pin Configurations
ISL6615A
(10 LD 3x3 DFN)
TOP VIEW
ISL6615A
(8 LD SOIC)
TOP VIEW
UGATE
1
8
PHASE
BOOT
2
7
PVCC
PWM
3
6
VCC
GND
4
5
LGATE
UGATE
1
BOOT
2
10 PHASE
9 PVCC
GND
N/C
3
PWM
4
7 VCC
GND
5
6 LGATE
8 N/C
*RECOMMEND TO CONNECT PIN 3 TO GND AND PIN 8 TO PVCC
Functional Pin Descriptions
PACKAGE PIN #
SOIC
DFN
PIN
SYMBOL
1
1
UGATE
Upper gate drive output. Connect to gate of high-side power N-Channel MOSFET.
2
2
BOOT
Floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See the Internal Bootstrap
Device “TIMING DIAGRAM” on page 6 under Description for guidance in choosing the capacitor value.
-
3, 8
N/C
No Connection. Recommend to connect pin 3 to GND and pin 8 to PVCC.
3
4
PWM
The PWM signal is the control input for the driver. The PWM signal can enter three distinct states during operation, see the
“TIMING DIAGRAM” on page 6 section under Description for further details. Connect this pin to the PWM output of the
controller.
4
5
GND
Bias and reference ground. All signals are referenced to this node. It is also the power ground return of the driver.
5
6
LGATE
6
7
VCC
Its operating range is +6.8V to 13.2V. Place a high quality low ESR ceramic capacitor from this pin to GND.
7
9
PVCC
This pin supplies power to both upper and lower gate drives. Its operating range is +4.5V to 13.2V. Place a high quality
low ESR ceramic capacitor from this pin to GND.
8
10
PHASE
Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET. This pin provides a return
path for the upper gate drive.
9
11
PAD
FN6608 Rev 2.00
April 13, 2012
FUNCTION
Lower gate drive output. Connect to gate of the low-side power N-Channel MOSFET.
Connect this pad to the power ground plane (GND) via thermally enhanced connection.
Page 3 of 13
ISL6615A
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (VBOOT-GND) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Input Voltage (VPWM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V
UGATE. . . . . . . . . . . . . . . . . . . . . . . . . . . . VPHASE - 0.3VDC to VBOOT + 0.3V
. . . . . . . . . . . .VPHASE - 3.5V (
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