RJE0607JSP-00-J0

Preliminary Datasheet RJE0607JSP Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. REJ03G1876-0100 Rev.1.00 Apr 01, 2010 Features       High endurance capability against to the short circuit. Built-in the over temperature shut-down circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on) : 140 m Typ, 260 m Max (VGS = –10 V) High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 (FP-8DAV)) 8 7 65 D 7 3 12 2 G Temperature Sensing Circuit Gate Resistor Gate Shut-down Circuit 1 S 4 Current Limitation Circuit 4 G Temperature Sensing Circuit Gate Resistor Current Limitation Circuit Gate Shut-down Circuit 3 S D 8 D 5 D 6 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Latch Circuit Latch Circuit MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage VDSS –60 Gate to source voltage VGSS –16 Gate to source voltage VGSS 2.5 Drain current ID Note5 –1.5 Body-drain diode reverse drain current IDR –1.5 Avalanche current IAP Note 4 –1.5 Avalanche energy EAR Note 4 9.6 Channel dissipation Pch Note 2 2 Channel dissipation Pch Note 3 1.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. Value at Tc = 25C 2. 1 Drive operation : When using the glass epoxy board (FR4 40  40  1.6 mm), PW  10 s 3. 2 Drive operation : When using the glass epoxy board (FR4 40  40  1.6 mm), PW  10 s 4. Tch = 25C, Rg  50  5. It provides by the current limitation lower bound value. Unit V V V A A A mJ W W C C REJ03G1876-0100 Rev.1.00 Apr 01, 2010 Page 1 of 7 RJE0607JSP Preliminary Typical Operation Characteristics (Ta = 25°C) Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Drain current (Current limitation value) Notes; 6. Pulse test Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop ID limt Min –3.5 — — — — — — — –3.5 –1.5 Typ — — — — — –0.8 –0.35 175 — — Max — –1.2 –100 –50 –1 — — — –12 — Unit V V A A A mA mA C V A Test Conditions Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Vi = –1.2 V, VDS = 0 Vi = –8 V, VDS = 0 Vi = –3.5 V, VDS = 0 Channel temperature (dv/dt VGS  500 V/ms) VGS = –12 V, VDS = –10 V Note 4 Electrical Characteristics (Ta = 25°C) Item Drain current Symbol ID1 ID2 ID3 V(BR)DSS V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS1 IDSS2 VGS(off) RDS(on) RDS(on) Coss td(on) tr td(off) tf VDF trr tos1 Min — — –1.5 –60 –16 2.5 — — — — — — — — –2.2 — — — — — — — — — — Typ — — — — — — — — — — –0.8 –0.35 — — — 185 140 194 1.82 1.95 0.99 0.84 0.83 85 18.6 Max –2 –10 — — — — –100 –50 –1 100 — — –10 –10 –3.4 380 260 — — — — — — — — Unit A mA A V V V A A A A mA mA A A V m m pF s s s s V ns ms Test Conditions VGS = –3.5 V, VDS = –10 V VGS = –1.2 V, VDS = –10 V VGS = –12 V, VDS = –10 V Note 7 ID = –10 mA, VGS = 0 IG = –800 A, VDS = 0 IG = 100 A, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VGS = –1.2 V, VDS = 0 VGS = 2.4 V, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –48 V, VGS = 0 Ta = 125C VDS = –10 V, ID = –1 mA ID = –0.75 A, VGS = –6 V Note 7 ID = –0.75 A, VGS = –10 V VDS = –10 V, VGS = 0, f = 1MHz VGS = –10 V, ID= –0.75 A, RL = 40  Note 7 Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down Note 8 operation time IF = –1.5 A, VGS = 0 IF = –1.5 A, VGS = 0 diF/dt = 50 A/s VGS = –5 V, VDD = –16 V Notes: 7. Pulse test 8. Including the junction temperature rise of the over loaded condition. REJ03G1876-0100 Rev.1.00 Apr 01, 2010 Page 2 of 7 RJE0607JSP Preliminary Main Characteristics Power vs. Temperature Derating 4.0 Maximum Safe Operation Area −10 Ta = 25°C Thermal shut down operation area 1 shot Pulse 1 Driver Operation Channel Dissipation Pch (W) 3.0 Drain Current ID (A) Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm), (PW ≤ 10s) 1 −1 m DC Op ion at er s 2.0 1 2D Dr ive < PW rO 1.0 riv pe er ra −0.1 Operation in this area is limited RDS(on) 10 s No Op tio n te n 9 era tio 0 0 50 100 150 200 −0.01 −0.01 −0.1 −1 −10 −100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Note 6: When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics −1.5 −4.5 V −5 V −6 V −8 V −10 V Pulse Test −2.0 Typical Transfer Characteristics VDS = −10 V Pulse Test Drain Current ID (A) Drain Current ID (A) −1.0 −4 V −1.5 −1.0 Tc = 75°C 25°C −0.5 −3.5 V VGS = 0 V 0 −2 −4 −6 −8 −10 −0.5 −40°C 0 0 −2 −4 −6 −8 −10 Drain to Source Voltage VDS (V) Drain Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current 1000 Pulse Test Drain to Source Saturation Voltage VDS(on) (mV) −1000 −800 −600 −400 −200 0 −2 ID = −0.5 A −4 −6 Pulse Test Static Drain to Source On State Resistance RDS(on) (mΩ) VGS = −6 V 100 −10 V −1 A −8 −10 10 −0.1 −1 −10 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1876-0100 Rev.1.00 Apr 01, 2010 Page 3 of 7 RJE0607JSP Static Drain to Source On State Resistance vs. Temperature Pulse Test 400 ID = −1 A −0.2 A, −0.5 A 300 VGS = −6 V Preliminary Body-Drain Diode Reverse Recovery Time 1000 Static Drain to Source On State Resistance RDS(on) (mΩ) Reverse Recovery Time trr (ns) 500 100 200 100 −10 V 0 −50 −25 0 ID = −0.2 A, −0.5 A, −1 A 25 50 75 100 125 150 10 −0.1 di / dt = 50 A /μs VGS = 0, Ta = 25°C −1 −10 Case Temperature Tc (°C) Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage 1000 VGS = 0 f = 1 MHz Switching Characteristics 10 Switching Time t (μs) tr td(on) 1 td(off) tf Capacitance C (pF) Coss 100 0.1 −0.1 VGS = −10 V, VDD = −30 V PW = 300 μs, duty ≤ 1 % −1 −10 10 −0 −10 −20 −30 −40 −50 −60 Drain Current ID (A) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) Pulse Test –10 V –1.5 Drain to Source Voltage VDS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test Gate to Source Voltage VGS (V) −16 −14 −12 −10 −8 −6 −4 −2 0 1 10 100 VDD = −16 V –2.0 –1.0 –5 V VGS = 0 V –0.5 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSD (V) Shutdown Time of Load-Short Test Pw (ms) REJ03G1876-0100 Rev.1.00 Apr 01, 2010 Page 4 of 7 RJE0607JSP Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) 200 Preliminary 180 160 140 120 ID = −0.2 A dv/dt VGS ≥ 500 V/ms 100 0 −2 −4 −6 −8 −10 Gate to Source Voltage VGS (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 tp uls e θch-f(t) = γs (t) • θch - f θch-f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM PW T 0.001 1 o sh D= PW T 0.0001 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (Operatioon of 2 devices; allowable value per device) 10 Normalized Transient Thermal Impedance γs (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 uls e θch-f(t) = γs (t) • θch - f θch-f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM PW T 0.001 1 o sh tp D= PW T 0.0001 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) REJ03G1876-0100 Rev.1.00 Apr 01, 2010 Page 5 of 7 RJE0607JSP Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = –30 V Vout td(on) Vout Monitor Vin 10% 90% 90% Preliminary Waveform Vin –10 V 50 Ω 90% 10% tr td(off) 10% tf REJ03G1876-0100 Rev.1.00 Apr 01, 2010 Page 6 of 7 RJE0607JSP Preliminary Package Dimensions Package Name SOP-8 JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g *1 D F 8 5 *2 E HE bp Index mark 1 Z e 4 * 3 bp xM c Terminal cross section (Ni/Pd/Au plating) NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Symbol Dimension in Millimeters Min L1 L D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Nom Max 4.90 5.3 3.95 A 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 A1 y Detail F 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part No. RJE0607JSP-00-J0 Quantity 2500 pcs/reel Shipping Container Taping REJ03G1876-0100 Rev.1.00 Apr 01, 2010 Page 7 of 7 Notice 1. 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