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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2756GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The µ PA2756GR is Dual N-channel MOS Field Effect
Transistor designed for switching applications.
8
5
1 : Source 1
2 : Gate 1
7, 8: Drain 1
FEATURES
• Low on-state resistance
RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
• Low Ciss: Ciss = 260 pF TYP.
• Built-in G-S protection diode against ESD
• Small and surface mount package (Power SOP8)
3 : Source 2
4 : Gate 2
5, 6: Drain 2
PART NUMBER
PACKAGE
µ PA2756GR
Power SOP8
6.0 ±0.3
4
4.4
0.8
+0.10
–0.05
5.37 MAX.
0.15
0.05 MIN.
ORDERING INFORMATION
1.44
1.8 MAX.
1
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
ID(DC)
±4.0
A
ID(pulse)
±16
A
PT1
1.6
W
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Drain Current (DC)
Note1
Drain Current (pulse)
Note2
Total Power Dissipation (1 unit)
Note1
Total Power Dissipation (2 units)
Note1
Tstg
−55 to +150
°C
Single Avalanche Current
Note3
IAS
4.0
A
Single Avalanche Energy
Note3
EAS
1.6
mJ
EAR
1.6
mJ
Repetitive Avalanche Energy
Notes 1.
2.
3.
4.
Note4
EQUIVALENT CIRCUIT
Drain 1
Body
Diode Gate 2
Gate 1
Gate
Protection
Diode
Drain 2
Source 1
Gate
Protection
Diode
Body
Diode
Source 2
Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
PW ≤ 10 µs, Duty Cycle ≤ 1%
Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
IAR ≤ 4.0 A, Tch ≤ 150°C
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17407EJ1V0DS00 (1st edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2005
µ PA2756GR
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
µA
Gate Leakage Current
IGSS
VGS = ±18 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
| yfs |
VDS = 10 V, ID = 2.0 A
2.0
RDS(on)1
VGS = 10 V, ID = 2.0 A
85
105
mΩ
RDS(on)2
VGS = 4.0 V, ID = 2.0 A
106
150
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
2.0
S
Input Capacitance
Ciss
VDS = 10 V
260
pF
Output Capacitance
Coss
VGS = 0 V
65
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
20
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 2.0 A
14
ns
tr
VGS = 10 V
5
ns
td(off)
RG = 10 Ω
80
ns
30
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 48 V
6
nC
Gate to Source Charge
QGS
VGS = 10 V
1
nC
QGD
ID = 4.0 A
1.5
nC
VF(S-D)
IF = 4.0 A, VGS = 0 V
0.9
V
Reverse Recovery Time
trr
IF = 4.0 A, VGS = 0 V
24
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
22
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
VDS
ID
Starting Tch
τ
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
PG.
2
50 Ω
10%
0
10%
Wave Form
VDD
D.U.T.
IG = 2 mA
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet G17407EJ1V0DS
td(on)
tr
ton
td(off)
tf
toff
µ PA2756GR
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
2.8
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
Mounted on ceramic
substrate of
2000 mm2 x 2.2 mm
2.4
2 units
2
1 unit
1.6
1.2
0.8
0.4
0
0
0
20
40
60
80
0
100 120 140 160
20
40
60
80
100 120 140 160
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
PW = 100 µs
10
ID(DC)
1 ms
1
RDS(on) Limited
(at VGS = 10 V)
0.1
Power Dissipation Limited
Single pulse, 1unit
TA = 25°C
Mounted on ceramic substrate
10 ms
100 ms
2
of 2000 mm x 2.2 mm
0.01
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
ID(pulse)
Rth(ch-A) = 78.1°C/W
100
10
1
0.1
100 µ
Single pulse, 1unit
TA = 25°C
Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G17407EJ1V0DS
3
µ PA2756GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
20
VDS = 10 V
Pulsed
Pulsed
ID - Drain Current - A
ID - Drain Current - A
10
15
VGS = 10 V
10
4.0 V
5
TA = −40°C
25°C
75°C
125°C
150°C
1
0.1
0.01
0.001
0.0001
0
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
1
0.5
-50 -25
0
25
50
| yfs | - Forward Transfer Admittance - S
1.5
0
75 100 125 150 175
10
VDS = 10 V
Pulsed
TA = −40°C
25°C
75°C
125°C
150°C
1
0.1
0.01
0.01
0.1
200
Pulsed
180
160
140
VGS = 4.0 V
100
10 V
60
10
100
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
1
10
100
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
Pulsed
180
160
ID = 4.0 A
2.0 A
0.8 A
140
120
100
80
60
0
1
2
3
4
5
6
7
8
9 10 11 12
VGS - Gate to Source Voltage - V
ID - Drain Current – A
4
5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2
0.1
4
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.5
80
3
VGS - Gate to Source Voltage - V
VDS = 10 V
ID = 1 mA
120
2
VDS - Drain to Source Voltage - V
3
VGS(off) - Gate Cut-off Voltage - V
1
Data Sheet G17407EJ1V0DS
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
200
1000
ID = 2.0 A
Pulsed
180
160
140
Ciss, Coss, Crss - Capacitance - pF
VGS = 4.0 V
120
100
10 V
80
60
40
Ciss
100
Coss
10
Crss
VGS = 0 V
f = 1 MHz
20
1
0
-50 -25
0
25
50
0.1
75 100 125 150 175
1
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
60
VDD = 30 V
VGS = 10 V
RG = 10 Ω
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
100
td(off)
tf
td(on)
10
tr
12
ID = 4.0 A
VDD = 48 V
30 V
12 V
50
40
10
8
30
6
VGS
20
10
4
2
VDS
0
1
0.1
1
10
0
0
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
2
3
4
5
6
7
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
trr - Reverse Recovery Time - ns
Pulsed
10
1
QG - Gate Charge - nC
ID - Drain Current - A
IF - Diode Forward Current - A
10
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
µ PA2756GR
VGS = 10 V
4.0 V
0V
1
0.1
VGS = 0 V
di/dt = 100 A/µs
100
10
1
0.01
0
0.5
1
1.5
0.1
1
10
100
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
Data Sheet G17407EJ1V0DS
5
µ PA2756GR
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100
10
IAS = 4.0 A
EAS = 1.6 mJ
1
VDD = 30 V
RG = 25 Ω
VGS = 20→0 V
Starting Tch = 25°C
80
60
40
20
0.1
0
10 µ
100 µ
1m
10 m
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - H
6
VDD = 30 V
RG = 25 Ω
VGS = 20→0 V
IAS ≤ 4.0 A
100
Data Sheet G17407EJ1V0DS
µ PA2756GR
• The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
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