Datasheet
µPD166028T1K
INTELLIGENT POWER DEVICE
R07DS1162EJ0200
Rev.2.00
May 22, 2015
1. Overview
1.1 Description
Family:
µPD166028T1K is part of 2nd Generation Intelligent Power Devices (IPD). This is N-channel high-side switches with
charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded
protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number
combination.
Scalability:
Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design
depending on target load.
Robustness:
Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against
long term and repetitive short circuit condition.
1.2 Features
•
•
•
•
•
•
•
•
•
•
Built-in charge pump
3.3V compatible logic interface
Low standby current
Short circuit protection
Shutdown by over current detection
Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control)
Absolute Tch over temperature protection
Built-in diagnostic function
Proportional load current sensing
Defined fault signal in case of abnormal load condition
Loss of ground protection
Under voltage lock out
Active clamp operation at inductive load switch off
AEC Qualified
RoHS compliant
1.3 Application
• Light bulb switching from 21W to 27W
• Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor
• Power supply switch, fail-safe switch of 14V DC grounded system
Note: The information contained in this document is the one that was obtained when the document was issued,
and may be subject to change.
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 1 of 40
µPD166028T1K Datasheet
2. Ordering Information
2. Ordering Information
Part No.
UPD166028T1K-E1-AY
UPD166028T1K-E2-AY
Note:
Nick name
NHQ035C
NHQ035C
Lead plating
Pure Matte Sn
Pure Matte Sn
Packing
Tape 1500 p/reel
Tape 1500 p/reel
Package
24-pin Power HSSOP
24-pin Power HSSOP
Part No. and Nick name are tentative and might change at anytime without notice.
MSL: 1, profile acc. J-STD-20C
2.1 Nick name
N H Q 035 C
On-state resistance
S: Single channel
D: Dual channel
Q: Quad channel
A: TO252-7
B: 12-pin Power HSSOP
C: 24-pin Power HSSOP
Nch High-side
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 2 of 40
µPD166028T1K Datasheet
3. Specification
3. Specification
3.1 Block Diagram
3.1.1 Nch High-side Quad Device
Voltage and Current Definition
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 3 of 40
µPD166028T1K Datasheet
3. Specification
3.2 Pin Configuration
3.2.1 24-pin Power HSSOP Pin Configuration
Pin No.
Terminal Name
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Tab
GNDA
IN1
IS1
IS2
IN2
N.C.
GNDB
IN3
IS3
IS4
IN4
VCC
SENB
OUT4
OUT4
OUT3
OUT3
N.C.
SENA
OUT2
OUT2
OUT1
OUT1
VCC
VCC
24 23 22 21 20 19 18 17 16 15 14 13
Tab
Tab
1
2
3
4 5 6 7
8
9 10 11 12
Pin function
Terminal Name
GNDm
Pin function
Ground connection (m=A to B)
INn
Input signal for channel n (n=1 to 4)
Connected to MCU port through 2k-50K serial
resistor.
ISn
Current sense and Diagnosis output signal
channel n (n=1 to 4)
Sense enable input (m=A to B)
Connected to GND through a 0.67K-5K resistor.
Not connect if this pin is not used.
SENm
Recommended connection
Connected to GND through a 100 Ω resistor or a
diode for reverse current protection
Refer chapter 6.
Connected to MCU port through 2k-50K serial
resistor. Not connect if this pin is not used.
OUTn
Protected high-side power output channel n (n=1
to 4)
Connected to load with small 50-100nF capacitor
in parallel.
VCC
Positive power supply for logic supply as well as
output power supply
Non connection
Connected to battery voltage with small 100nF
capacitor in parallel.
Left open
N.C.
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 4 of 40
µPD166028T1K Datasheet
3. Specification
3.3 Absolute Maximum Ratings
Ta=25°C, unless other specified
Parameter
Vcc Voltage
Vcc Voltage at reverse
battery condition
Symbol
VCC
-VCC
Rating
28
-16
Unit
V
V
GND Reverse current at
reverse battery condition
Vcc voltage under Load
Dump condition
Load Current
Total power dissipation
for whole device (DC)
IGND(Rev)
200
mA
Vload dump
42
V
IL
PD
Self limited
2.16
A
W
Voltage at IN pin
VIN
-2 ~ 16
V
-16
IN pin current
Voltage at IS pin
IIN
VIS
10
VCC
mA
V
-16
V
IS Reverse current at
reverse battery condition
IIS(Rev)
-30
mA
Voltage at SEN pin
VSEN
-2 ~ 16
V
-16
SEN pin current
Channel Temperature
Storage Temperature
ESD susceptibility
ISEN
Tch
Tstg
VESD
10
-40 to +150
-55 to +150
2000
mA
°C
°C
V
4000
200
Inductive load switch-off
EAS
35
energy dissipation single
pulse
Inductive load switch-off
EAR
25
energy dissipation
repetitive pulse
Remark) All voltages refer to ground pin of the device
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Test Condition
RL=5.4Ω, t dTth
(c) Tch > aTth
Power limitation control
Current limitation control with IL(CL) when auto restart from deltaTch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta
Tch protection, if VonVon(CL1), the sense pin outputs Iis,fault. Even auto restart from
absolute Tch protection, if VonVIH) the device might shut down automatically when Vout>Vcc+0.3V is detected.
And the sense pin outputs Iis,fault if the device shuts down.
If restart is required, please reset via input pin when detect the Iis.fault.
VCC
VCC
IN
>VIH
OUT
SEN
VIN
Irev
IS
GND
>VSENH
RIS
VIS
Vout
VSEN
VIN
0
VSEN
0
Vcc
Vout
0
Iout
0
Irev
VIS
0
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Iis.fault
t
Page 15 of 40
µPD166028T1K Datasheet
3. Specification
State transition diagram
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Turn-on
C
Turn-off
B
Return
IL(lim) initial value is power MOSFET saturation current.
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 16 of 40
µPD166028T1K Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(a) IL > IL(SC)
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before over current detection
C
Turn-off
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Turn-on
After over current detection
Exit from off-latch
B
Return
Page 17 of 40
µPD166028T1K Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(b) deltaTch > dTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before dTcht detection
C
Turn-off
Turn-on
During shutdowning by dTth detection
During current limit by saturation current
B
Return
Exit from current limitation control
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 18 of 40
µPD166028T1K Datasheet
3. Specification
Turn-on in an over load condition including short circuit condition
(c) Tch > aTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before aTcht detection
C
Turn-off
Turn-on
During shutdowning by aTth detection
During current limitation control
B
Return
Exit from power limitation control
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 19 of 40
µPD166028T1K Datasheet
3. Specification
An over load condition which is include a short circuit condition during on-state
(a) Von > Von(CL) with weak short condition
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before Von(CL) detection after turn on
C
Turn-off
Turn-on
After Von(CL) detection
During shutdowning by dTth detection
B
Return
During current limitation control
Exit from power limitation control
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 20 of 40
µPD166028T1K Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(a) Von > Von(CL) with dead condition
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before Von(CL) detection after turn on
C
Turn-off
Turn-on
After Von(CL) detection
After over current detection
B
Return
Exit from power limitation control
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 21 of 40
µPD166028T1K Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(b) deltaTch > dTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Turn-on
C
Turn-off
Before dTth detection after turn on
During shutdowning by dTth detection
B
Return
Exit from thermal protection control
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 22 of 40
µPD166028T1K Datasheet
3. Specification
An over load condition including short circuit condition during on-state
(c) Tch > aTth
Over current
Turn-on
Thermal
IN -> High
Input
A
IL > IL(SC)
Thermal
No
Yes
Tch > Tth
Shutdown by latch
Von < Von(CL1)
Over current
No
Shutdown
Yes
IN = Low
C
Thermal
No
Yes
Yes
Current limitation
No
Thermal
IL(lim)=IL(TT)
Input
Return
B
Von < Von(CL2)
No
Yes
A
dTch > dTth
Thermal
No
Yes
IL(lim)=IL(CL)
IL > IL(lim)
Yes
Shutdown
No
Input
IL(lim)=IL(TT)
Over current
C
No
Yes
IN = Low
No
IL(lim)=IL(CL)
Yes
Input
IL > IL(NL)
Yes
IN = Low
Yes
C
Return
Input
Von=Von(NL)
No
Shutting down
No
Yes
No
Before aTth detection after turn on
C
Turn-off
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Turn-on
During shutdowning by aTth detection
Exit from thermal protection control
B
Return
Page 23 of 40
µPD166028T1K Datasheet
3. Specification
3.6.7 Device behavior at small load current conduction
The device has a function which controls Ron in order to improve KILIS accuracy at small load current conduction.
Von (VCC-OUT) is proportionate to IL under normal conditions. Under ILVOUT(OL)
< 2µA (Iis,offset)
Iis,fault in case of VOUT>VOUT(OL)
< 1µA (Iis,dis)
1) In case of OUT terminal is connected to GND via load.
2) In case of IS terminal is connected to GND via resister.
3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection.
4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1).
5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1)..
6) VOUT depends on the short circuit condition
7) VOUT depends on the ratio of VCC-OUT-GND resistive component.
8) Don’t care
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 25 of 40
µPD166028T1K Datasheet
3. Specification
Current sense output
The device output analog feedback current proportional to output current from IS pin. In the case of much higher
current than nominal load current, current sense output is saturated. In the case of much lower current than nominal load
current, current sense output is above 5µA if output current is above IL(CSE) max, current sense output is below 2µA,
IIS,offset max, if output current is below IL(CSE) min.
IIS
IIS
KILIS=IL/IIS
5µA
2µA
IL
IIS,offset
IL
IL(CSE)
Sense current under fault condition
The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection,
during power limitation and during thermal toggling. IIS,fault is specified with RIS=1kΩ condition. IIS,fault is
attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For
example, In the case of RIS=1kΩ, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be 9V
to 3.5V if VCC=13.5V. In the case of RIS is higher than 1kΩ, Operation point as IIS,fault is lower than specified value
but VIS should be higher than RIS=1kΩ condition.
IIS,fault
1kΩ load line
VCC
9mA
VCC-VIS
VCC
IS
3.5mA
GND
VIS
VCC-VIS
VIS
RIS
VCC-VIS
VCC
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 26 of 40
µPD166028T1K Datasheet
3. Specification
Sense current settling time
VIN
VSEN
VOUT
tsis(on)
tssen(off) tssen(on)
tsis(LC)
tsis(LC)
tsis(off)
IIS
Fault signal delay time at over current detection
VIN
VSEN
Over current detection
VOUT
Iis,fault
IIS
tdsc(fault)
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 27 of 40
µPD166028T1K Datasheet
3. Specification
Fault signal delay time at power limitation
VIN
VSEN
Short circuit appear
Short circuit disappear
Power limitation
VOUT
tdpl(fault)
IIS
tdpl(off)
Iis,fault
Fault signal delay time at Thermal toggling
VIN
VSEN
Short circuit appear
Power
limitation
VOUT
Short circuit disappear
Thermal toggling
tdpl(fault)
tdpl(off)
Iis,fault
IIS
tsis(off)
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 28 of 40
µPD166028T1K Datasheet
3. Specification
Fault signal delay time at open load detection
VIN
VSEN
Open load condition appear
Open load detection
Open load detection
VOUT
Iis,fault
tdop
IIS
Iis,offset
R07DS1162EJ0200 Rev.2.00
May 22, 2015
tdop(fault)
Iis,dis
Page 29 of 40
µPD166028T1K Datasheet
3. Specification
3.6.9 Nominal load
Product
NHQ035C
Nominal load
5.4Ω
3.6.10 Driving Capability
Driving Capability is specified as load impedance. Over current detection characteristics is designed above Driving
Capability characteristics. If estimated load impedance which comes from peak inrush current is lower than Driving
Capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown
the output. Depend on the conditions, Power Limitation function may work during inrush current. If estimated load
impedance which comes from peak inrush current is lower than Driving Capability characteristics, Power limitation
disappear within 30ms. This parameter does not mean that the device can drive the resistive load up to Driving
Capability characteristics.
IL [A]
VIN
IL(SC) specified point
NHQ035C: 35A
t
45
IL(SC) characteristics
5
13.5
Driving Capability:
IL
Von [V]
t
30ms
NHQ035C:300mΩ
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 30 of 40
µPD166028T1K Datasheet
3. Specification
3.6.11 Measurement condition
Switching waveform of OUT terminal
VIN
ton
toff
td(on)
td(off)
90%
70%
VOUT
dV/dton
30%
10%
R07DS1162EJ0200 Rev.2.00
May 22, 2015
90%
70%
-dV/dtoff
30%
10%
Page 31 of 40
µPD166028T1K Datasheet
3. Specification
3.7 Package drawing
24-pin Power HSSOP
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 32 of 40
µPD166028T1K Datasheet
3. Specification
3.8 Taping information
3.9 Marking information
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 33 of 40
µPD166028T1K Datasheet
4. Typical characteristics
4. Typical characteristics
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 34 of 40
µPD166028T1K Datasheet
4. Typical characteristics
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 35 of 40
µPD166028T1K Datasheet
4. Typical characteristics
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 36 of 40
µPD166028T1K Datasheet
4. Typical characteristics
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 37 of 40
µPD166028T1K Datasheet
4. Typical characteristics
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 38 of 40
µPD166028T1K Datasheet
5. Thermal characteristics
5. Thermal characteristics
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 39 of 40
µPD166028T1K Datasheet
6. Application example in principle
6. Application example in principle
RIN, RSEN, RAN values are in range of 2k to 50kΩ depending microcontroller while R_L value is typically 4kΩ.
If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s
value is typically 100kΩ
GND Network recommendation
In case of V_loaddump < 35V
In case of 35V < V_loaddump < 42V
Vbat
Vbat
VCC
VCC
GND
GND
RGND
External diode is recommended in order to
prevent reverse current toward control logic
part at reverse battery condition.
External diode and resistor are recommended
in order to prevent reverse current toward
control logic part at reverse battery condition
and limit the current through ZDAZ at load
dump condition. 100Ω is recommended as
RGND.
Note: If other component is installed to prevent reverse current at reverse battery condition,
diode is not required in GND Network.
Note: Approx. 1kΩ additional resistor in parallel with the diode is recommended if Vf vaule of
the diode is high.
R07DS1162EJ0200 Rev.2.00
May 22, 2015
Page 40 of 40
Revision History
Rev.
1.00
2.00
Date
Mar 27, 2014
May 22, 2015
µPD166028T1K Datasheet
Page
1-38
15
24
Description
Summary
1st issue
"Device behavior at reverse current conduction during on-state" is added.
"Device behavior at small load current conduction" is added.
All trademarks and registered trademarks are the property of their respective owners.
C-1
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
3.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
5.
Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3
Tel: +1-905-237-2004
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics India Pvt. Ltd.
No.777C, 100 Feet Road, HALII Stage, Indiranagar, Bangalore, India
Tel: +91-80-67208700, Fax: +91-80-67208777
Renesas Electronics Korea Co., Ltd.
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2015 Renesas Electronics Corporation. All rights reserved.
Colophon 5.0
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Renesas Electronics:
UPD166028T1K-E1-AY#YE UPD166028T1K-E1-AY#YW
工商网监
湘ICP备2023018690号
