2SAR553P

Midium Power Transistors (-50V / -2A) 2SAR553P  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA) 2) High speed switching  Applications Driver  Packaging specifications Package Taping Type Code T100 Basic ordering unit (pieces) 1000  2SAR553P  Absolute maximum ratings (Ta = 25 C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed Power dissipation Junction temperature Range of storage temperature *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³)  Dimensions (Unit : mm) (1) (2) (3) Abbreviated symbol : MG  Inner circuit (Unit : mm) Symbol VCBO VCEO VEBO IC ICP PD PD Tj Tstg *1 *2 *3 Limits -50 -50 -6 -2 -4 0.5 2 150 -55 to 150 Unit V V V A A W W C C (1) Base (2) Collector (3) Emitter www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.12 - Rev.A 2SAR553P Electrical characteristic (Ta = 25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time *1 Pulsed *2 See switching time test circuit Data Sheet Symbol BVCEO BVCBO BVEBO ICBO IEBO *1 VCE(sat) hFE fT *1 Cob ton *2 tstg *2 tf *2 Min. -50 -50 -6 180 - Typ. -200 320 22 45 220 35 Max. -1 -1 -400 450 - Unit V V V A A MHz pF ns ns ns Conditions IC= -1mA IC= -100μA IE= -100μA VCB= -50V VEB= -4V VCE= -2V, IC= -50mA VCE= -10V IE=300mA, f=100MHz VCB= -10V, IE=0A f=1MHz IC= -1A,IB1= -100mA, IB2=100mA,VCC ~ -10V _ mV IC= -700mA, IB= -35mA www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.12 - Rev.A 2SAR553P Electrical characteristic curves -5.0mA -4.0mA -0.5 -3.0mA -2.5mA Data Sheet 1000 Ta=25°C 1000 VCE = -2V COLLECTOR CURRENT : IC[A] -0.3 -1.5mA 100 VCE= -5V -2V DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE -0.4 -2.0mA 100 -0.2 -1.0mA Ta=125°C 75°C 25°C -40°C -0.1 -0.5mA 0.0 0 -0.5 -1 -1.5 -2 10 -1 -10 -100 -1000 -10000 10 -1 -10 -100 -1000 -10000 COLLECTOR CURRENT : IC[mA] Fig3. DC Current Gain vs. Collector Current ( ΙΙ ) COLECTOR TO EMITTER VOLTAGE : VCE[V] Fig.1 Typical Output Characteristics COLLECTOR CURRENT : IC[mA] Fig.2 DC Current Gain vs. Collector Current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE (sat)[V] COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] -1 Ta=25°C -1 IC/IB=20 -10000 VCE= -2V COLLECTOR CURRENT : IC [mA] -1000 -0.1 -0.1 Ta=125°C 75°C 25°C -40°C Ta=125°C 75°C 25°C -40°C -0.01 IC/IB=50 20 10 -100 -0.01 -10 -0.001 -1 -10 -100 -1000 -10000 -0.001 -1 -1 -10 -100 -1000 -10000 0 -0.5 -1 -1.5 COLLECTOR CURRENT : IC[mA] BASE TO EMITTER VOLTAGE : VBE[V] Fig.6 Ground Emitter Propagation Characteristics COLLECTOR CURRENT : IC[mA] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( Ι ) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( ΙΙ ) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) 1000 EMITTER INPUT CAPACITANCE : Cib(pF) TRANSITION FREQUENCY : fT[MHz] COLLECTOR CURRENT : IC [A] Cib 100 Ta=25°C f=1MHz IE=0A IC=0A 1000 Ta=25°C VCE= -10V -10 Single pulse 1ms 10ms -1 100ms 100 10 Cob -0.1 DC Ta=25°C (Mounted on a recommended land) DC Ta=25°C (Mounted on a ceramic board) -0.01 -0.1 -1 -10 -100 1 -0.1 -1 -10 -100 10 10 100 EMITTER CURRENT : IE[mA] Fig.8 Gain Bandwidth Product vs. Emitter Current 1000 COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage COLLECTOR TO EMITTER VOLTAGE : VCE[V] Fig.9 Safe Operating Area www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.12 - Rev.A 2SAR553P Switching time test circuit RL=10Ω VIN Pw IB1 IC Data Sheet _ VCC ~ -10V Pw _ 50μs ~ DUTY CYCLE1% IB2 IB2 BASE CURENT WAVEFORM IB1 ton 90% COLLECTOR CURRENT WAVEFORM tstg tf IC 10% www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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