Medium power transistor (60V, 0.5A)
2SC5868
Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090 Dimensions (Unit : mm)
TSMT3
0.95 0.95
2.8 1.6
(1)
1.9
0.4
(3)
(2)
2.9 1.0MAX 0.85
0.16
Applications Small signal low frequency amplifier High speed switching
(1) Base (2) Emitter (3) Collector
0.3
0.6
0.1
Each lead has same dimensions
Abbreviated symbol : VS
Structure NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
TL 3000
Code Basic ordering unit (pieces)
2SC5868
Absolute maximum ratings (Ta=25C)
Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits 60 60 6 0.5 1.0 500 150 −55 to 150 Unit V V V A A mW °C °C
∗1 ∗2
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land
Pulsed
Tj
Tstg
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c ○ 2011 ROHM Co., Ltd. All rights reserved.
0
0.7
1/3
2011.03 - Rev.A
2SC5868
Electrical characteristics (Ta=25C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. 60 60 6 − − Typ. − − − − − Max. − − − 1.0 1.0 Unit V V V μA μA Condition IC=1mA IC=100μA IE=100μA VCB=40V VEB=4V IC=100mA IB=10mA VCE=2V IC=50mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=500mA IB1=50mA IB2= −50mA VCC 25V
Data Sheet
Collector-emitter saturation voltage DC current gain
VCE (sat) hFE
−
120
∗1
75
300 390
mV
−
−
∗1
Transition frequency
fT
−
300
−
MHz
Corrector output capacitance Turn-on time Storage time Fall time
Cob Ton Tstg Tf
− − − −
5 70 130 80
− − − −
pF ns ns ns
∗2
∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits
hFE RANK
Q 120−270 R 180−390
Electrical characteristic curves
1000
DC CURRENT GAIN : hFE
Tstg
100
Ta=125°C Ta=25°C Ta= −40°C
DC CURRENT GAIN : hFE
SWITCHING TIME : (ns)
Ta=25°C VCC=25V IC / IB=10 / 1
1000
VCE=2V
1000
Ta=25°C
100
VCE=5V VCE=3V VCE=2V
100
Tf Ton
10
10
10 0.01
0.1
1
10
1 0.001
0.01
0.1
1
1 0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
Fig.2 DC Current Gain vs. Collector Current (Ι)
Fig.3 DC Current Gain vs. Collector Current (ΙΙ)
10
IC / IB=10 / 1
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
10
Ta=25°C
10
IC / IB=10 / 1
BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
1
Ta=125°C Ta=25°C Ta= −40°C
1
IC / IB=20 / 1 IC / IB=10 / 1
1
0.1
0.1
0.1
Ta=125°C Ta=25°C Ta= −40°C
0.01 0.001
0.01
0.1
1
0.01 0.001
0.01
0.1
1
0.01 0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (Ι)
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ)
Fig.6 Base-Emitter Saturation Voltage vs. Collecter Current
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2/3
2011.03 - Rev.A
2SC5868
Data Sheet
1
100
0.1
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Ta=125°C Ta=25°C Ta= −40°C
TRANSITION FREQUENCY : fT (MHz)
VCE=2V
1000
COLLECTOR CURRENT : IC (A)
Ta=25°C VCE=10V
100
Ta=25°C f=1MHz
10
10
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6
1 0.001
0.01
0.1
1
10
1 0.1
1
10
100
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : IE (A)
BASE TO COLLECTOR VOLTAGE : VCB (V)
Fig.7 Grounded Emitter Propagation Characteristics
Fig.8 Transition Frequency
Fig.9 Collector Output Capacitance
Switching characteristics measurement circuits
RL=50Ω VIN IB1 IC VCC 25V IB2
PW PW 50 S Duty cycle ≤ 1%
IB1 Base current waveform 90% Collector current waveform Ton IC 10% Tstg Tf IB2
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c ○ 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.03 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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R1120A
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