2SC5876

Medium power transistor (60V, 0.5A) 2SC5876 Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2088 Dimensions (Unit : mm) (1) 0.3 (3) 1.25 2.1 0.2 0.15 (2) Applications Small signal low frequency amplifier High speed switching (1)Emitter (2)Base (3)Collector 0.1Min. Each lead has same dimensions Abbreviated symbol : VS Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Type Code Basic ordering unit (pieces) 2SC5876 Taping T106 3000 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land. Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 60 60 6 0.5 1.0 200 150 −55 to +150 Unit V V V A A mW °C °C ∗1 ∗2 www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 0.7 0.9 1.3 2.0 UMT3 0.65 0.65 1/3 2011.03 - Rev.B 2SC5876 Electrical characteristics (Ta=25C) Parameter Collector−base breakdown voltage Emitter−base breakdown voltage Collector cut-off current Emitter cut-off current Collector−emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time ∗1 Pulse measurement Data Sheet Symbol BVCBO Min. 60 60 6 − − − 120 − − − − − Typ. − − − − − 150 − 300 5 70 130 80 Max. − − − 1.0 1.0 300 390 − − − − − Unit V V V μA μA mV − MHz pF ns ns ns IC=100μA IC=1mA IE=100μA VCB=40V VEB=4V Conditions Collector−emitter breakdown voltage BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT IC=100mA, IB=10mA VCE=2V, IC=50mA VCE=10V, IE= −100mA, f=10MHz VCB=10V, IE=0mA, f=1MHz IC=500mA, IB1=50mA IB2= −50mA VCC 25V ∗1 ∗1 Cob ton tstg tf hFE RANK Q 120-270 R 180-390 Electrical characteristic curves 1000 Ta=25°C VCC=25V IC/IB=10/1 1000 Ta=125°C DC CURRENT GAIN : hFE VCE=2V 1000 Ta=25°C Tstg VCE=5V DC CURRENT GAIN : hFE SWITCHING TIME (ns) 100 Ta= −40°C Ta=25°C 100 VCE=2V VCE=3V 100 Tf Ton 10 10 10 0.01 0.1 1 10 1 0.001 0.01 0.1 1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Switching Time Fig.2 DC current gain vs. collector current Fig.3 DC current gain vs. collector current 10 IC/IB=10/1 10 Ta=25°C 10 IC/IB=10/1 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 1 Ta=125°C COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) Ta= −40°C 1 1 0.1 Ta=25°C Ta= −40°C 0.1 IC/IB=20/1 Ta=125°C Ta=25°C 0.1 IC/IB=10/1 0.01 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Base-emitter saturation voltage vs. collector current www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.B 2SC5876 COLLECTOR OUTPUT CAPACITANCE : CoB (pF) Data Sheet 1 1000 TRANSITION FREQUENCY : FT (MHz) Ta=25°C VCE=10V 100 COLLECTOR CURRENT : IC (A) Ta=25°C f=1MHz Ta=125°C 0.1 Ta=25°C Ta= −40°C 100 10 10 0.01 0 VCE=2V 0.5 1 1.5 1 −0.001 −0.01 −0.1 −1 −10 1 0.1 1 10 100 BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.7 Ground emitter propagat on characteristics Fig.8 Transition frequency Fig.9 Collector output capacitance Switching characteristics measurement circuits RL=50Ω VIN IB1 IC VCC 25V IB2 1% PW PW 50 S Duty cycle IB1 Base current waveform 90% Collector current waveform Ton IC 10% Tstg Tf IB2 www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A