BA12003B

BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such as relay coils, attachments can be kept to a minimum. With an output sustain voltage as high as 60V and an output current (sink current) of 500mA, this product is ideal for use with various drivers and as an interface with other elements. !Applications Drivers for LEDs, lamps, relays and solenoids Interface with other elements !Features 1) High output current. (IOUT=500mA Max.) 2) High output sustain voltage. (VOUT=50V Max.) 3) Seven Darlington transistors built in. 4) Built-in surge-absorbing clamp diode. (Note : Refer to the “Reference items when using in application.” ) !Block diagram IN1 1 16 OUT1 IN2 2 15 OUT2 IN3 3 14 OUT3 IN4 4 13 OUT4 IN5 5 12 OUT5 IN6 6 11 OUT6 IN7 7 10 OUT7 GND 8 9 COM BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs !Internal circuit configuration COM OUT COM OUT IN 2.7kΩ IN 7.2kΩ 7.2kΩ 3kΩ 3kΩ GND GND Fig.1 BA12001B Fig.2 BA12003B / BF COM IN OUT 10.5kΩ 7.2kΩ 3kΩ GND Fig.3 BA12004B !Absolute maximum ratings (Ta=25°C) Parameter Power supply voltage Symbol Limits Unit VCE 60 V Input voltage other than BA12001B VIN −0.5∼+30 V Input current BA12001B IIN 25 mA / unit Output current IOUT 500 mA / unit Ground pin current IGND 2.3∗1 Power dissipation DIP package SOP package Diode reverse voltage A 1250∗2 Pd mW 625∗3 VR 60 V Diode forward current IF 500 mA Operating temperature Topr −25∼+75 ˚C Storage temperature Tstg −55∼+150 ˚C ∗1 Pulse width ≤ 20ms, duty cycle ≤ 10%, same current for all 7 circuits ∗2 Reduced by 10mW for each increase in Ta of 1˚C over 25˚C . ∗3 Reduced by 50mW for each increase in Ta of 1˚C over 25˚C . !Recommended operating conditions (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions Output current Parameter IOUT − − 350 mA Fig.9, 10 Power supply voltage VCE − − 55 V − Input voltage (excluding BA12001B) VIN − − 30 V − Input current (BA12001B only) IIN − − 25 mA / unit − BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Output leakage current IL − 0 10 µA VCE = 60V DC current transfer ratio hFE 1000 2400 − V VCE = 2V, IOUT = 350mA 0.94 1.1 Output saturation voltage VCE(sat) − 1.14 1.3 1.46 1.6 1.75 2 2.53 5 1.91 2.4 2.75 6 2.17 3.4 3.27 8 0.90 1.35 0.39 0.5 BA12003B / BF IOUT = 100mA, IIN = 250µA IOUT = 200mA, IIN = 350µA V IOUT = 350mA, IIN = 500µA VIN − VIN − VIN − IIN − IR − 0 50 Diode forward voltage VF − 1.73 2 V IF = 350mA Input capacitance CIN − 30 − pF VIN = 0V, f = 1MHz BA12004B BA12003B / BF Input voltage BA12004B BA12003B / BF BA12004B BA12003B / BF Input current BA12004B Diode reverse current V VCE = 2V, IOUT = 100mA V VCE = 2V, IOUT = 200mA V VCE = 2V, IOUT = 350mA mA VIN = 3.85V VIN = 5V µA VR = 60V Note: Input voltage and input current for BA12001 vary based on external resistor. !Measurement circuits (1) Output leakage current IL OPEN (2) DC current transfer ratio Output saturation voltage hFE = IO II VCE (sat) (3) Input voltage VIN OPEN OPEN OPEN IL IO II IO VCE VI VCE VCE (sat) (4) Input current IIN (5) Diode reverse current IR (6) Diode forward voltage IF OPEN IR OPEN VR OPEN IF OPEN VF VI OPEN OPEN (7) Input capacitance CIN OPEN f Capacitance bridge LO HI VI OPEN TEST SIGNAL LEVEL 20mVrms Fig.4 BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs !Application example RY LED (2) LED driver (1) Relay driver Fig.5 !Application notes The BA12001B is a transistor array which can be directly coupled to a general logic circuit such as PMOS, CMOS, or TTL. A current limiting resistor needs to be connected in series with the input. The BA12003B / BF can be coupled directly to TTL or CMOS output (when operating at 5V). In order to limit the input current to a stable value, resistors are connected in series to each of the inputs. The BA12004B is designed for direct coupling to CMOS or PMOS output using a 6 to 15V power supply voltage. In order to limit the input current to a stable value, resistors are connected in series to each of the inputs. The load for each of these products should be connected between the driver output and the power supply. To protect the IC from excessive swing voltage, the COM pin (Pin 9) should be connected to the power supply. Fig.6 shows the configuration of the on-chip diode for surge absorption. In the construction of the surge-absorbing diode,there is an N-P junction between the N-layer (N-well + BL) and the substrate (P-sub) so that when the diode is on, current flows from the output pin to the substrate. In terms of the vertical construction, this diode is configured similar to a PNP transistor. When using the surge-absorbing diode, take appropriate measures regarding the thermal characteristics of the design considering the current that will be handled. Also, if motor back-rush current or other conditions that will result continued surge current to flow to the surge-absorbing diode can be foreseen, we strongly recommend connecting a Schottky barrier diode (or other type of diode with a low foward voltage) in parallel with the surge-absorbing diode to construct a bypass route for the surge current. OUT COM In-flow current to the surge-absorbing diode N+ P+ N+ IDi ISO P ISO Isub N-well N+ B/L P-sub Fig.6 Vertical construction of the surge-absorbing diode P BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs !Electrical characteristic curves 800 625 BA12003BF 600 400 OUTPUT CURRENT : IOUT (mA) 1000 400 2ch 300 3ch 200 4ch 5ch 100 6ch 7ch All series 400 350 10% 20% 300 Ta = 25˚C 200 110mA Ta = 75˚C 100 64mA 200 0 0 25 50 75 100 125 150 10 20 30 40 50 60 70 80 90 100 500 The shaded range should never be exceeded under any circumstances DC CURRENT GAIN : hFE OUTPUT CURRENT : IOUT (mA) 100 Usage conditions range 80 100 IIN = 250µA 1000 Max. usage conditions 60 500 2000 300 40 Fig.9 Output conditions (II) Ta = 25˚C VCE = 2.0V 5000 350 200 20 DUTY CYCLE (%) Fig.8 Output conditions (I) Fig.7 Power dissipation vs. ambient temperature 400 0 DUTY CYCLE : (%) AMBIENT TEMPERATURE : Ta (˚C) OUTPUT CURRENT: IOUT (mA) When all circuits are on All series 1250 Other than BA12003BF 1200 OUTPUT CURRENT : IO (mA) POWER DISSIPATION : Pd (mW) 500 500 1400 500 200 400 300 Ta = −30˚C 200 Ta = 25˚C 100 Ta = 80˚C 10 20 30 40 50 100 10 20 50 100 200 OUTPUT CURRENT : IOUT (mA) 300 Ta = −30˚C 200 Ta = 25˚C 100 Ta = 80˚C 0.5 1.0 1.5 2.0 2.5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.13 Output current vs. voltage between collector and emitter 1.5 2.0 2.5 20 IIN = 500µA IIN = 350µA 400 1.0 Fig.12 Output current vs. voltage between collector and emitter 500 500 0.5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 DC current transfer ratio vs. output current Fig.10 Usage conditions range per circuit OUTPUT CURRENT : IOUT (mA) 1000 OUTPUT CURRET : IOUT (mA) SUPPLY VOLTAGE: VCC (V) 0 10 500 0 0 INPUT CURRENT : IIN (mA) 0 400 300 Ta = −30˚C 200 Ta = 25˚C 100 15 Ta = −25˚C Ta = 25˚C Ta = 75˚C 10 5 Ta = 80˚C 0 0 0.5 1.0 1.5 2.0 2.5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.14 Output current vs. voltage between collector and emitter 0 10 20 30 40 INPUT VOLTAGE : VIN (V) Fig.15 Input current vs. input voltage (BA12003B / BF) BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs 4 25 25 Ta = 75˚C 2 1 0 10 20 30 OUTPUT VOLTAGE : VCE OUT (V) INPUT CURRENT : IIN (mA) Ta = 25˚C 3 20 Ta = 75˚C Ta = 25˚C Ta = −25˚C 15 10 5 VOUT = 20V RL = 68Ω 20 0.5 15 10 5 1 1.5 2 1 2.5 2 3 4 Fig.18 Output voltage vs. input voltage (BA12004B) Fig.17 Output voltage vs. input voltage (BA12003B / BF) !External dimensions (Units : mm) BA12001B / BA12003B / BA12004B BA12003BF 10.0 ± 0.2 19.4 ± 0.3 8 0.51Min. 6.2 ± 0.3 0.11 0.3 ± 0.1 0.5 ± 0.1 1.5 ± 0.1 3.2 ± 0.2 4.25 ± 0.3 7.62 2.54 9 1 8 1.27 0.4 ± 0.1 0.15 ± 0.1 1 16 4.4 ± 0.2 9 6.5 ± 0.3 16 0.3Min. 0° ~ 15° 0.15 DIP16 5 INPUT VOLTAGE : VIN (V), VI (V) INPUT VOLTAGE : VIN (V) INPUT VOLTAGE : VIN (V) Fig.16 Input current vs. input voltage (BA12004B) Ta = 75˚C Ta = 25˚C Ta = −25˚C 0 0 40 OUTPUT VOLTAGE : VOUT (V), VCE (V) VOUT = 20V RL = 68Ω Ta = −25˚C SOP16 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0