BD8184MUV-E2

Multi-channel System Power Supply IC for Small to Middle PANEL BD8184MUV or Power Supply ICs for TFT-LCD Panels e N co ew m m D es en ig de ns d f No.11035EBT19 Description The BD8184MUV is a system power supply for the TFT-LCD panels used for liquid crystal Monitors and Note Display. Incorporates high-power FET with low on resistance for large currents that employ high-power packages, thus driving large current loads while suppressing the generation of heat. A charge pump controller is incorporated as well, thus greatly reducing the number of application components. Also Gate Shading Function is included. Features 1) Boost DC/DC converter; 18 V / 2.5 A switch current. (Target specification is ±1% accurate.) 2) Switching frequency: 1.2 MHz 3) Operational Amplifier (short current 200mA) 4) Incorporates Positive / Negative Charge-pump Controllers. 5) Gate Shading Function 6) VQFN024V4040 Package (4.0 mm x 4.0 mm) 7) Protection circuits: Under Voltage Lockout Protection Circuit Thermal Shutdown Circuit (Latch Mode) Over Current Protection Circuit (AVDD) Timer Latch Mode Short Circuit Protection (AVDD SRC VGL) Over / Under Voltage Protection Circuit for Boost DC/DC Output No SCP time included (160ms from UVLO-off) N ot R Applications Power supply for the TFT-LCD panels used for LCD Monitors and Note Display www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/17 2012.06 - Rev.B Technical Note BD8184MUV Symbol LIMIT Unit Supply Voltage 1 VIN +7 V Supply Voltage 2 AVDD +20 V Supply Voltage 3 SRC +36 V Switching Voltage SW, DRP, DRN +20 V Input Voltage 1 RSTIN, DLY, CTL, FB, FBP, FBN VIN+0.3 V Input Voltage 2 INN, INP +20 Output Voltage 1 RST, COMP, VREF +7 Output Voltage 2 VCOM +20 or ●Absolute Maximum Ratings (TA = 25℃) Output Voltage 3_1 GSOUT +36 V Output Voltage 3_2 SRC - GSOUT +40 V Tama 150 ℃ V V V e N co ew m m D es en ig de ns d f Parameter Junction Temperature Power Dissipation *1 Pd 3560 mW Operating Temperature Range Topr -40～85 ℃ Storage Temperature Range Tstg -55～150 ℃ *1 Derating in done 28.5mW/℃ for operating above Ta≧25℃(On 4-layer 74.2mm×74.2mm×1.6mm board) ●Operating Range (Ta=-40℃～85℃) Symbol MIN MAX Unit Supply Voltage 1 VIN 2.0 5.5 V Supply Voltage 2 AVDD 6 18 V Supply Voltage 3 SRC 12 34 V N ot R Parameter www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/17 2012.06 - Rev.B Technical Note BD8184MUV ●Electrical characteristics (unless otherwise specified VIN = 3.3V, AVDD = 10V and TA=25℃) Limits Parameter Symbol Unit Condition Min Typ Max GENERAL - 1.2 3 mA No Switching Under Voltage Lockout Threshold VUVLO 1.75 1.85 1.95 V VIN rising Internal Reference Output Voltage VREF 1.238 1.250 1.262 V No load Thermal Shutdown (rising) TSD - 160 - ℃ Duration to Trigger Fault Condition TSCP - 55 - ms VFB 1.238 1.250 1.262 V Voltage rising VTL_FB 0.95 1.0 1.05 V VFB falling FB Input Bias Current IFB - 0.1 1 µA VFB= 1.5V SW Leakage Current ISW_L - 0 10 µA VSW=20V Maximum switching Duty Cycle MDUTY 85 90 95 % VFB= 1.0V RSW - 200 - mΩ SW Current Limit ISWLIM 2.5 - - A Over Voltage Protection VOVP - 20 - V AVDD rising Under Voltage Protection VUVP 1.3 1.6 1.9 V AVDD falling TSS_FB - 13.6 - ms FSW 1.0 1.2 1.4 MHz VRST - 0.05 0.2 V IRST =1.2mA RSTIN Threshold Voltage VTH_L 1.18 1.25 1.32 V RSTIN falling RSTIN Input Current IRSTIN - 0 - µA VRSTIN=0 to VIN-0.3 TNO_SCP 146 163 180 ms No SCP Zone VRANGE 0 - AVDD V Offset Voltage VOS - 2 15 mV VINP= 5.0V Input Current IINP - 0 - µA VINP= 5.0V VOH - 5.03 5.06 V ICOM = +50mA VOL 4.94 4.97 - V ICOM = -50mA ISHT_VCOM - 200 - mA SR - 40 - V/us or IVIN Junction Temp FB , FBP or FBN below threshold e N co ew m m D es en ig de ns d f Circuit Current BOOST CONVERTER (AVDD) FB Regulation Voltage FB Fault Trip Level SW ON-Resistance BOOST Soft Start Time Oscillator frequency RESET ot R RST Output Low Voltage RST Blanking Time ISW= 200mA N Operational Amp rifer Input Range Output Swing Voltage (VINP= 5.0V) Short Circuit Current Slew Rate www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/17 2012.06 - Rev.B Technical Note BD8184MUV ●Electrical characteristics (unless otherwise specified VIN = 3.3V, AVDD = 10V and TA=25℃) (Continued) Limits Parameter Symbol Unit Condition Min Typ Max Negative Charge pump driver (VGL) VFBN 241 265 289 mV VTL_FBN 400 450 500 mV VFBN rising FBN Input Bias Current IFBN - 0.1 1 µA VFBN= 0.1V Oscillator frequency FCPN 500 600 700 kHz DRN Leakage Current IDRN_L - 0 10 µA VFBP 1.23 1.25 1.27 V VTL_FBP 0.95 1.0 1.05 V VFBP falling FBP Input Bias Current IFBP - 0.1 1 µA VFBP= 1.5V Oscillator frequency FCPP 500 600 700 kHz DRP Leakage Current IDRP_L - 0 10 µA Soft-Start Time TSSP - 3.4 - ms IDLY 4 5 6 µA DLY Threshold Voltage VTL_DLY 1.22 1.25 1.28 V CTL Input Voltage High VIN_H 2.0 - - V CTL Input Voltage Low VIN_L - - 0.5 V CTL Input Bias Current ICTL - 0 - µA VRSTIN=0 to VIN-0.3 TGS_R - 100 - ns VSRC= 25V Propagation delay time (Falling) TGS_F - 100 - ns VSRC= 25V SRC -GSOUT ON Resistance RGS_H - 15 - Ω VDLY = 1.5V GSOUT-RE ON Resistance RGS_M - 30 - Ω VDLY = 1.5V GSOUT-GND ON Resistance RGS_L - 2.5 - kΩ VDLY = 1.0V VFBN=1.0V e N co ew m m D es en ig de ns d f FBN Fault Trip Level or FBN Regulation Voltage Positive Charge pump driver (SRC) FBP Regulation Voltage FBP Fault Trip Level VFBP= 1.5V Gate Shading Function (GSOUT) DLY Source Current N ot R Propagation delay time (Rising) VDLY falling ○This product is not designed for protection against radio active rays. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/17 2012.06 - Rev.B Technical Note BD8184MUV ●Electrical characteristic curves (Reference data) (Unless otherwise specified VIN = 3.3V, AVDD = 10V and TA=25℃) 50 2.0 1.40 45 40 25℃ 1.30 85℃ 35 85℃ 30 IVIN [mA] IVIN [mA] 1.2 25℃ 25 -40℃ 0.8 Fsw [MHz] 1.6 -40℃ 20 15 1.10 or 0.4 10 5 0.0 1.00 0 0 1 2 3 4 5 -40 0 1 2 3 4 5 -15 10 35 60 85 Ta [℃] VIN [V] e N co ew m m D es en ig de ns d f VIN [V] Fig.1 Circuit Current Fig.2 Circuit Current Fig.3 Dependent on Temperature (No switching) (Switching) Frequency 1.30 1.40 1.30 1.29 1.28 1.30 85℃ 1.27 25℃ 1.25 1.26 1.20 VREF [V] VREF [V] Fsw [MHz] 1.20 1.25 1.24 1.10 -40℃ 1.23 85℃ 1.21 2 2.5 3 3.5 4 4.5 5 5.5 1.15 1.20 2 VIN [V] 2.5 3 3.5 4 4.5 5 0 5.5 5 10 VIN [V] Fig.4 Dependent on Input -40℃ 1.20 1.22 1.00 25℃ 15 20 25 30 IVREF[mA] Fig.5 VREF Line Regulation Fig.6 VREF Load Regulation Voltage Frequency 85℃ 80 60 10 6 6 2 -40℃ 40 20 ICOMP [uA] -2 2 -2 0 0 R -6 1 2 VCOMP [V] 3 N ot Fig.7 COMP V.S.CDUTY -6 -10 -10 0 1 2 VCOMP [V] 3 0 Fig.8 COMP Sink Current 1 2 VCOMP [V] 3 Fig.9 COMP Source Current 100 IAVDD IAVDD 90 Efficiency [%] Duty [%] 25℃ 10 ICOMP [uA] 100 AVDD AVDD 80 VIN=3.3V AVDD=9.8V Fsw=1.177MHz VGH,VGL→NoLoad 70 60 0 100 200 300 400 500 IAVDD [mA] Fig.10 Load Transient Response Fig.11 Load Transient Response Fig.12 Boost Converter Falling Rising Efficiency www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/17 2012.06 - Rev.B Technical Note BD8184MUV ●Electrical characteristic curves (Reference data) – Continued (Unless otherwise specified VIN = 3.3V, AVDD = 10V and TA=25℃) 10 VINP VINP INN=VCOM INN=VCOM 0.1 0.01 or DLY Time [s] 1 0.001 0.001 0.01 0.1 1 10 e N co ew m m D es en ig de ns d f C_DLY [uF] Fig.13 VCOM Slew Rate （Rising） CTL Fig.14 VCOM Slew Rate Fig.15 C_DLY vs. delay time （falling） CTL GSOUT(RE pull down to AVDD) GSOUT(RE pull down to GND) Fig. 16 Gate Shading Wave form1 Fig.17 Gate Shading Wave form2 SRC AVDD VIN VGL Fig.18 Power On Sequence1 (Main Output) SRC SRC AVDD AVDD VIN DLY CTL VIN VIN GSOUT GSOUT RST RST R GSOUT Fig.20 Power Off Sequence1 (R_RST_U=10k,R_RST_D=10k) Fig.21 Power Off Sequence2 (R_RST_U=10k,R_RST_D=OPEN) N ot Fig.19 Power On Sequence2 (CTL=signal, RE pull down to AVDD) SRC AVDD VIN VGL Fig.22 Power On Sequence3 (Main Output) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/17 2012.06 - Rev.B Technical Note BD8184MUV ●Block Diagram ●Pin Configuration Digital Control Block 1.25V 16 INP PGND Comparator SW PGND 20 19 2 3 RE 20 1 18 COMP 18 PGND 17 FB 16 COMP 15 RSTIN 14 AGND2 13 VIN PGND Current Sense and Limit Oscillator INN 19 Sequence Control AVDD VCOM 5 2 or 17 24 SW Error Amplifier FB 21 Fall/Thermal Control GSOUT Fall 23 (1.25V) DLY 12 0.265V Reference Voltage SRC VIN VREF 22 13 3 BD8184MUV Negative Charge Pump 1.25V 21 RE GSOUT 22 DRP 6 AGND1 AVDD VCOM SRC 11 FBN High Voltage Switch Control 10 4 VREF AGND1 12 3 FBP CTL 5 6 9 DLY AVDD DRP RST 8 AVDD Positive Charge pump CTL 24 INP AGND1 8 1 INN 7 7 2 4 DRN DRN FBP 10 AGND1 AVDD e N co ew m m D es en ig de ns d f 0.265V FBN 11 23 RST Fig.24 Pin Configuration 9 1.25V RSTIN 15 160ms 14 AGND2 Fig.23 Block Diagram ●Package Dimension VQFN024V4040 4.0±0.1 R 4.0±0.1 Marking D8184 1.0MAX 0.08 S 2.4±0.1 1 6 0.4±0.1 24 7 12 19 18 0.75 0.5 2.4±0.1 C0.2 (0.22) S +0.03 0.02 -0.02 N ot LOT 1PIN MARK 13 +0.05 0.25 -0.04 (Unit : mm) Fig.25 Package Dimension (UNIT : mm) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 7/17 2012.06 - Rev.B Technical Note BD8184MUV ●Pin Assignments Pin name Function 1 INP COM Amplifier input + 2 INN COM Amplifier input - 3 VCOM COM Amplifier output 4 AGND1 Ground 5 AVDD Supply voltage input for com, charge pump 6 DRP Drive pin of the positive charge pump 7 DRN Drive pin of the negative charge pump 8 CTL High voltage switch control pin 9 RST Open drain reset output 10 FBP Positive charge pump feed back 11 FBN Negative charge pump feed back 12 VREF Internal Reference voltage output 13 VIN Supply voltage input for PWM 14 AGND2 Ground 15 RSTIN Reset comparator input 16 COMP BOOST amplifier output 17 FB BOOST amplifier input 18 PGND1 BOOST FET ground 19 PGND2 BOOST FET ground 20 SW BOOST FET Drain 21 RE Gate High voltage Fall set pin 22 GSOUT Gate High voltage output set pin 23 SRC Gate High voltage input set pin 24 DLY GSOUT Delay Adjust pin N ot R e N co ew m m D es en ig de ns d f or PINNO. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 8/17 2012.06 - Rev.B Technical Note BD8184MUV ●Main Block Function ・Boost Converter A controller circuit for DC/DC boosting. The switching duty is controlled so that the feedback voltage FB is set to 1.25 V (typ.). A soft start operates at the time of starting. ・Positive Charge Pump A controller circuit for the positive-side charge pump. The switching amplitude is controlled so that the feedback voltage FBP will be set to 1.25 V (typ.). or ・Negative Charge Pump A controller circuit for the negative-side charge pump. The switching amplitude is controlled so that the feedback voltage FBN will be set to 0.265 V (Typ.). e N co ew m m D es en ig de ns d f ・Gate Shading Controller A controller circuit for P-MOS FET Switch The GSOUT switching synchronize with CTL input. When VIN drops below UVLO threshold or RST=Low(=RSTIN