BD9833KV-E2

1/4 STRUCTURE Silicon Monolithic Integrated Circuit TYPE 8 Channel Switching Regulator Controller and 1 Series Regulator for DVC PRODUCT SERIES ＢＤ９８３３ＫＶ FEATURES ・ 8 DC/DC controller,1 Series Regulator ・ DC/DC controller: FET direct driver (Pch driver:7ch, Nch driver:1ch) ・ Series Regulator: Variable output voltage stable with Ceramic Output Capacitor ・ Package: VQFP48C(0.5mm pitch) ○Absolute maximum ratings （Ta=25℃） Parameter Symbol Limits Units Power Supply Voltage1 VCC,VIN2345,VIN6789 12 V Power Supply Voltage2 VIN1 12 V Pd 600(*1) 950(*2) mW mW Operating Temperature Topr -25～+85 ℃ Storage Temperature Tstg -55～+125 ℃ Power Dissipation (*1) Without external heat sink, the power dissipation degrades by 6.0mW/℃ above 25℃. (*2) Power dissipation degrades by 9.5mW/℃ above 25℃, when mounted on a PCB (70.0mm×70.0mm×1.6mm). ○Recommended operating conditions（Ta=-25～+75℃） Parameter Power Supply Voltage Oscillator Frequency Symbol Spec. Units VCC,VIN2345,VIN6789 4.0～10 2.8～10 V VIN1 100kHz～1.2MHz fosc Status of this document REV.B 2/4 ○Electrical characteristics（Ta=25℃，VCC=7V, VIN1=7V STB=3V, Spec. Parameter Symbol unless otherwise specified） Units Min. Typ. Max Conditions. ■DC/DC controller 【Reference Voltage】 Reference Voltage Line Regulation Vref DVLi 2.475 - 2.500 - 2.525 10 V mV Load Regulation DVLo - - 10 mV Short-Circuit Output Current 【Load Regulation】 Ios -40 -12 -5 mA Short-Circuit Output Current1(VCC) Hysteresis width (VCC) Threshold Voltage 2(VREF) 【Soft start】 Vstd1 3.55 3.65 3.75 V ΔVst1 Vstd2 0.6 2.2 0.11 2.3 0.16 2.4 V V Soft standby voltage Input Source Current 【Protection Circuit】 Vsso1 ISOFT1 -2.0 10 -1.0 100 -0.5 mV μA INV Threshold Voltage Vscpth 0.65 0.75 0.85 V SCP Output Current SCP Threshold Voltage SCP Standby Voltage 【Triangular wave oscillator】 Iscp Vtsc Vssc -3.0 1.4 - -2.0 1.5 10 -1.5 1.6 100 μA Oscillator Frequency Frequency Stability (Vcc) RT Output Voltage ■DC/DC controller 【Reference Voltage】 fosc Df VRT 580 0.95 680 0.3 1.00 780 2 1.05 kHz % V RT=11kohm,CT=180pF VCC=4.0～10V Vthea VOFST Ibias1 Ibias2 Ibias3 AV 0.980 -150 -170 -170 50 1.00 0 -40 -40 65 1.020 10 150 80 V mV nA nA nA dB CH2,3,4,5,6,7 CH8,9 CH2,3,4,5,6,7 INV pin CH8,9 INV pin BW 0.5 1 2 MHz Vfbh - - V Vfbl Isink1 Isink2 Isource1 Isource2 VCM Vref -0.1 1.3 3.4 -240 -280 0 2.6 6.7 -150 -190 - 0.1 3.9 10 -90 -130 VCC-2 V mA mA μA μA Vt0 Vt100 1.730 2.090 1.820 2.180 1.910 2.270 V V DUTY0% DUTY100% RonHI1 RonLO1 Isink1 Isource1 7 6 70 -240 14 12 170 -160 21 18 250 -80 Ω Ω mA mA VG2,3,4,5,6,7,8,9 VG2,3,4,5,6,7,8,9 VG2,3,4,5,6,7,8,9 VG2,3,4,5,6,7,8,9 Vstb Istb Vstb5,6 Istb5,6 1.0 1.0 - 1.5 1.5 - 2.0 30 2.0 30 V μA V μA Iccs Icc 1 0 5 5 10 μA mA Output Voltage Vo1 2.94 3.00 3.06 V Reference Voltage Output Current Ability The Difference between Input voltage and output voltage VFB1 Io1 0.98 300 1.00 - 1.02 - V mA DV1 70 120 250 mV Line Regulation11 DVLi11 - 4 10 mV Line Regulation12 DVLi12 - 4 10 mV Load Regulation1 Load Regulation2 Short-Circuit Output Current Circuit Current VOUT1 pin Connect Capacitor DVLo1 DVLo2 Ios1 IVIN1 COUT -140 40 2.2 10 30 -70 80 － 30 90 -35 160 － mV mV mA μA μF Reference Voltage Line Regulation Load Regulation Short-Circuit Output Current 【Load Regulation】 Short-Circuit Output Current1(VCC) Hysteresis width (VCC) Threshold Voltage 2(VREF) 【Soft start】 Soft standby voltage Input Source Current 【Protection Circuit】 INV Threshold Voltage 【PWM Comparator】 Input Threshold Voltage 2,3,4,5,6,7,8,9 Vcc=4.0V～10V Iref=-0.1mA～ -1.0mA Vref=0V VCC monitor Sweep down VREF monitor CH2,3,4,5,6,7, INV Voltage“L” detect VSCP=0.75V V mV CH8,9 NON pin DC Design Guarantee AV=0dB Design Guarantee V 【FET Driver】 ON Resistance Current Ability 【Control】 STB Threshold Voltage STB Input Current STB5,6 Threshold Voltage STB5,6 Input Current 【Circuit Current】 Standby Current Circuit Current on Driving VG=”H” VG=”L” VG=”L” VG=”H” STB=3V STB5,6=3V STB=0V 【Series Regulator】 REV. B R1=200KΩ,R2=100KΩRefer to below figure VIN1=VOUT1x0.97, IOUT1=20mA VIN1=4V to10V IOUT1=100mA VIN1=3.5V to10V IOUT1=10mA IOUT1=1mA to 100mA IOUT1=1mA to 300mA VOUT1=0V IOUT1=0mA 3/4 ○Package Dimensions ○Pin Description VQFP48C ○Block Diagram （Unit:mm） 番号 端子名 1 INV5 Error Amp inverted input（CH5) 2 FB5 Error Amp output (CH5) 3 INV6 Error Amp inverted input（CH6) 4 FB6 Error Amp output (CH6) 5 INV7 Error Amp inverted input（CH7) 6 FB7 Error Amp output (CH7) 7 NON8 Error Amp non-inverted input（CH8) 8 INV8 Error Amp inverted input（CH8) 9 FB8 Error Amp output (CH8) 10 NON9 Error Amp non-inverted input（CH9) 11 INV9 Error Amp inverted input（CH9) 12 FB9 Error Amp output (CH9) 13 VG9 FET Driver Output (CH9) 14 VG8 FET Driver Output (CH8) 15 VIN6789 Power supply for the output circuit (CH6,7,8,9) 16 PGND6789 Power Ground for the output circuit (CH6,7,8,9) 17 VG7 FET Driver Output (CH7) 18 VG6 FET Driver Output (CH6) 19 VG5 FET Driver Output (CH5) 20 VG4 FET Driver Output (CH4) 21 VIN2345 Power supply for the output circuit (CH2,3,4,5) 22 PGND2345 Power Ground for the output circuit (CH2,3,4,5) 23 VG3 FET Driver Output (CH3) 24 VG2 FET Driver Output (CH2) 25 FB2 Error Amp output (CH2) 26 INV2 Error Amp inverted input（CH2) 27 FB3 Error Amp output (CH3) 28 INV3 Error Amp inverted input（CH3) 29 STB SW for CH2～9，Hi：Operating 30 GND Ground 31 FB4 Error Amp output (CH4) 32 INV4 Error Amp inverted input（CH4) 33 STB5 SW for CH5，Hi：Operating 34 STB6 SW for CH6，Hi：Operating 35 STB1 SW for CH1，Hi：Operating 36 VOUT1 Series Regulator Output 37 VIN1 Power supply for Series Regulator 38 FB1 Amp inverted input 39 N.C. Non-Connected pin 40 SCP A capacitor is placed to set up the delay time of the SCP 41 SOFT Soft start/This pin connects to a capacitor to set up the start-up time 42 VREF Reference Voltage Output pin 43 VCC Power supply for DC/DC 44 CT A capacitor is to set up the triangular-wave frequency 45 RT A resistor is to set up the triangular-wave frequency 46 DTC5 Dead time control pin for CH5 47 DTC6 Dead time control pin for CH6 48 DTC7 Dead time control pin for CH7.And this pin connects to a capacitor to set up the start-up time. REV. B 機能 4/4 ○Operation Notes 1) Absolute maximum ratings Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may result in IC deterioration or damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when such damage is suffered. A physical safety measure such as a fuse should be implemented when use of the IC in a special mode where the absolute maximum ratings may be exceeded is anticipated. 2) GND potential Ensure a minimum GND pin potential in all operating conditions. In addition, ensure that no pins other than the GND pin carry a voltage lower than or equal to the GND pin, including during actual transient phenomena. 3) Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 4) Inter-pin shorts and mounting errors Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result in damage to the IC. Shorts between output pins or between output pins and the power supply and GND pin caused by the presence of a foreign object may result in damage to the IC. 5) Operation in a strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. 6) Thermal shutdown circuit (TSD circuit) This IC incorporates a built-in thermal shutdown circuit (TSD circuit). The TSD circuit is designed only to shut the IC off to prevent runaway thermal operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of the thermal shutdown circuit is assumed. 7) Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Ground the IC during assembly steps as an antistatic measure, and use similar caution when transporting or storing the IC. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. 8) Common impedance Power supply and ground wiring should reflect consideration of the need to lower common impedance and minimize ripple as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating inductance and capacitance). 9) Applications with modes that reverse VCC and pin potentials may cause damage to internal IC circuits. For example, such damage might occur when VCC is shorted with the GND pin while an external capacitor is charged. It is recommended to insert a diode for preventing back current flow in series with VCC or bypass diodes between VCC and each pin. Bypass diode Back current prevention diode VCC Output Pin 10) Timing resistor Timing resistor connected between RT and GND, has to be placed near RT terminal (45pin). With the connection must be as short as possible. 11) IC pin input This monolithic IC contains P+ isolation and PCB layers between adjacent elements in order to keep them isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when a resistor and transistor are connected to pins as shown in follow chart,  the P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or GND > (Pin B) for the transistor (NPN).  Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described above combines with the N layer of other adjacent elements to operate as a parasitic NPN transistor. The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltages lower than the GND (PCB) voltage to input and output pins. Resistance Transistor (NPN) (PinA) Ｅ Ｃ Ｎ Ｐ Ｎ Ｐ ＋ Ｐ Ｎ Ｎ P substrate ＧＮＤ Parasitic diode Ｐ ＋ Ｎ (PinA) Ｂ (PinB) ＋ Parasitic diode ＧＮＤ Ｐ Ｐ Ｎ ＧＮＤ (PinB) ＋ Ｎ P substrate Ｂ Ｃ Ｅ ＧＮＤ Parasitic elementals Other adiacent components REV. B ＧＮＤ Parasitic diode Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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