BR25S128GUZ-WE2

Datasheet WL-CSP EEPROM family BR25S128GUZ-W (128K) ●General Description BR25S128GUZ-W is a 16K×8bit serial EEPROM of SPI BUS interface method. ●Features „ High speed clock action up to 10MHz (Max.) „ Wait function by HOLDB terminal „ Part or whole of memory arrays settable as read only memory area by program „ 1.7V to 5.5V single power source action most suitable for battery use „ 64Byte page write mode useful for initial value write at factory shipment „ For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) „ Auto erase and auto end function at data rewrite „ Low current consumption ¾ At write action (5V) : 1.5mA (Typ.) ¾ At read action (5V) : 1.0mA (Typ.) ¾ At standby action (5V) : 0.1μA (Typ.) „ Address auto increment function at read action „ Write mistake prevention function ¾ Write prohibition at power on ¾ Write prohibition by command code (WRDI) ¾ Write prohibition by WP pin ¾ Write prohibition block setting by status registers (BP1, BP0) ¾ Write mistake prevention function at low voltage „ Data kept for 40 years „ Data rewrite up to 1,000,000 times „ Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0 ●Page write Page Part Number ●Package W(Typ.) x D(Typ.) x H(Max.) VCSP35L2 2.00mm x 2.63mm x 0.40mm 64Byte BR25S128GUZ-W ●BR25S128GUZ-W Capacity Bit format 128Kbit 16K×8 Power source voltage VCSP35L2 1.7V to 5.5V ● ○Product structure：Silicon monolithic integrated circuit www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. TSZ22111･14･001 ○This product is not designed protection against radioactive rays 1/23 TSZ02201-0R2R0G100310-1-2 19.Jul.2012 Rev.001 BR25S128GUZ-W Datasheet (128K) ●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Unit Supply Voltage VCC -0.3 to +6.5 V Power Dissipation Pd 220 (VCSP35L2) mW Storage Temperature Tstg －65 to +125 ℃ Operating Temperature Topr －40 to +85 ℃ ‐ -0.3 to Vcc+0.3 *1 V Terminal Voltage Remarks Degradation is done at 4.5mW, for operation above 25℃. *1 The Max value of Terminal Voltage is not over 6.5V. ●Memory cell characteristics (Ta=25°C , Vcc=1.7V to 5.5V) Limits Parameter Min. Typ. Number of data rewrite times *1 Unit Max. 1,000,000 - - Times 40 - - Years Data hold years *1 *1 Not 100% TESTED ●Recommended Operating Ratings Parameter Symbol Unit Ratings Power source voltage Vcc 1.7 to 5.5 Input voltage VIN 0 to Vcc ●Input / output capacity (Ta=25°C, frequency=5MHz) Parameter Symbol Min. Input capacity *1 Output capacity *1 *1 V Max. CIN － 8 COUT － 8 Unit pF Conditions VIN=GND VOUT=GND Not 100% TESTED. ●Electrical characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.7V to 5.5V) Parameter “H” Input Voltage1 “L” Input Voltage1 “L” Output Voltage1 “L” Output Voltage2 “H” Output Voltage1 “H” Output Voltage2 Input Leakage Current Output Leakage Current Operating Current Write Operating Current Read Standby Current Limits Symbo l Min. VIH1 VIL1 VOL1 VOL2 VOH1 VOH2 ILI ILO 0.7xVcc -0.3 0 0 Vcc-0.2 Vcc-0.2 -1 -1 Vcc+0.3 0.3xVcc 0.4 0.2 Vcc Vcc 1 1 V V V V V V μA μA ICC1 － － 0.5 mA ICC2 － － 1 mA ICC3 － － 2 mA ICC4 － － 1 mA ICC5 － － 1 mA ICC6 － － 1.5 mA ICC7 － － 2 mA ICC8 － － 2 mA ICC9 － － 4 mA ICC10 － － 8 mA ISB － － 2 μA www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Max. Unit Typ. － － － － － － － － 2/23 Conditions 1.7≦Vcc≦5.5V 1.7≦Vcc≦5.5V IOL=2.1mA, 2.5≦Vcc