ES6U42

2.5V Drive Pch+SBD MOSFET ES6U42 Structure Silicon P-channel MOSFET / Schottky barrier diode Dimensions (Unit : mm) WEMT6 (6) (5) (4) Features 1) Pch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Applications Switching (1) (2) (3) Abbreviated symbol : U42 Package specifications Package Type ES6U42 Code Basic ordering unit (pieces) Taping T2R 8000 Inner circuit (6) (5) (4) ∗2 (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain ∗1 (1) ∗1 ESD protection diode ∗2 Body diode (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗2 Limits −20 ±12 ±1.0 ±4.0 −0.4 −4.0 150 0.7 Unit V V A A A A °C W / ELEMENT Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation ∗1 60Hz 1cycle ∗2 Mounted on a ceramic board Symbol VRM VR IF IFSM Tj PD ∗1 Limits 25 20 0.5 2.0 150 0.5 Unit V V A A °C W / ELEMENT ∗2 Parameter Power dissipation Range of storage temperature ∗ Mounted on a ceramic board Symbol PD ∗ Tstg Limits 0.8 −55 to +150 Unit W / TOTAL °C www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.01 - Rev.A ES6U42 Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.7 − Static drain-source on-state RDS (on)∗ − resistance − Forward transfer admittance Yfs ∗ 0.7 Input capacitance Ciss − Output capacitance Coss − Reverse transfer capacitance Crss − Turn-on delay time td (on) ∗ − Rise time tr ∗ − Turn-off delay time td (off) ∗ − Fall time tf ∗ − Total gate charge Qg ∗ − Gate-source charge Qgs ∗ − Gate-drain charge Qgd ∗ − ∗Pulsed Data Sheet Typ. − − − − 280 310 570 − 150 20 20 9 8 25 10 2.1 0.5 0.5 Max. ±10 − −1 −2.0 390 430 800 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −1A, VGS= −4.5V ID= −1A, VGS= −4V ID= −0.5A, VGS= −2.5V VDS= −10V, ID= −0.5A VDS= −10V VGS= 0V f= 1MHz VDD −15V VGS= −4.5V ID= −0.5A RL 30Ω RG= 10Ω VDD −15V, VGS= −4.5V ID= −1A, RL 15Ω RG= 10Ω Parameter Symbol Min. Forward voltage ∗Pulsed Typ. − Max. −1.2 VSD ∗ − Unit V Conditions IS= −1.0A, VGS=0V Parameter Forward voltage Reverse current Symbol VF IR Min. − − − Typ. − − − Max. 0.36 0.52 100 Unit V V µA IF= 0.1A IF= 0.5A VR= 20V Conditions www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.01 - Rev.A ES6U42 Electrical characteristics curves 2.0 Ta=25°C Pulsed 2.0 VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -3.0V Data Sheet DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 1.5 1.5 DRAIN CURRENT : -ID[A] VGS= -10V VGS= -4.0V VGS= -3.0V Ta=25°C Pulsed 10 VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 VGS= -2.4V 1.0 1.0 VGS= -2.5V VGS= -2.2V VGS= -2.0V 0.1 VGS= -2.2V 0.5 0.5 0.01 VGS= -2.0V 0.0 0.0 2.0 4.0 6.0 8.0 10.0 0.001 1.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics(Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 1000 VGS= -2.5V VGS= -4.0V VGS= -4.5V Ta=125°C Ta=75°C Ta=25°C Ta= -25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] Ta=25°C Pulsed 10000 VGS= -4.5V Pulsed 10000 VGS= -4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 1000 100 0.01 0.1 1 10 100 0.01 0.1 1 10 100 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 10000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C FORWARD TRANSFER ADMITTANCE : |Yfs| [S] REVERSE DRAIN CURRENT : -Is [A] VGS= -2.5V Pulsed 10 VDS= -10V Pulsed 10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1000 0 0.1 100 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 0 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current 0.01 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.01 - Rev.A ES6U42 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 900 800 700 600 500 400 300 200 100 0 2 4 6 8 10 12 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics ID= -1.0A ID= -0.5A SWITCHING TIME : t [ns] Ta=25°C Pulsed 10000 Ta=25°C VDD= -15V VGS=-4.5V RG=10Ω Pulsed 5 GATE-SOURCE VOLTAGE : -VGS [V] 4 Data Sheet 1000 tf 100 td(off) 3 2 10 tr td(on) 1 0 0 0.5 1 1.5 Ta=25°C VDD= -15V ID= -1.0A RG=10Ω Pulsed 2 2.5 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 1000 Ciss CAPACITANCE : C [pF] 100 Crss 10 Coss Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 10 100 1 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage 100000 REVERSE CURRENT: IR [uA] 10000 1000 100 10 1 0.1 0.01 0 5 10 15 20 25 REVERSE VOLTAGE : VR [V] Fig.1 Reverse Current vs. Reverse Voltage Ta= - 25℃ Ta = 75℃ Ta = 25℃ pulsed FORWARD CURRENT : IF(A) 1 pulsed 0.1 Ta = 75℃ 0.01 Ta = 25℃ Ta= - 25℃ 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF(V) Fig.2 Forward Current vs. Forward Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.01 - Rev.A ES6U42 Measurement circuit Pulse Width Data Sheet ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% td(off) toff tf VDS td(on) 90% tr ton Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS IG(Const.) D.U.T. RL VDS VGS Qgs Qg Qgd RG VDD Charge Fig.2-1 Gate Charge Measurement Circuit FIg.2-2 Gate Charge Waveform Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.01 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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