R6018ANX

10V Drive Nch MOSFET R6018ANX Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Switching (1) Gate (2) Drain (3) Source Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 15.0 12.0 8.0 14.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 Packaging specifications Package Type Basic ordering unit (pieces) Bulk 500 Inner circuit R6018ANX ∗1 (1) (2) (3) (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed. ∗1 Body Diode Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg ∗3 ∗1 ∗3 ∗1 ∗2 ∗2 Limits 600 ±30 ±18 ±72 18 72 9 21.6 50 150 −55 to +150 Unit V V A A A A A mJ W °C °C Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 2.5 Unit °C/W www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.06 - Rev.A R6018ANX Electrical characteristics (Ta=25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ Pulsed Data Sheet Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) ∗ | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 600 − 2.5 − 6.5 − − − − − − − − − − Typ. − − − − 0.21 − 2050 1400 60 37 85 155 65 55 10 22 Max. ±100 − 100 4.5 0.27 − − − − − − − − − − − Unit nA V μA V Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=9A, VGS=10V VDS=10V, ID=9A VDS=25V VGS=0V f=1MHz VDD 300V, ID=9A VGS=10V RL=33.3Ω RG=10Ω VDD 300V ID=18A VGS=10V Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage ∗ Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS= 18A, VGS=0V www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.06 - Rev.A R6018ANX Electrical characteristic curves 100 Operation in this area is limited by R DS(ON) 40 20 Ta= 25°C Pulsed DRAIN CURRENT: ID ( A) 15 Ta= 25°C Pulsed 10V 8.0V 7.0V 10 6.5V 6.0V 5.0V Data Sheet 10V 8.0V 7.0V DRAIN CURRENT: ID ( A) DRAIN CURRENT : ID ( A) 10 30 6.5V 20 6.0V 10 VGS= 4.5V 5.5V 1 PW =100us PW =1ms 0.1 Tc = 25°C Single Pulse 1 PW = 10ms DC operation 0 10 100 1000 0 10 5.0V 5 VGS= 4.5V 0 20 30 40 50 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE: VDS ( V) Fig.2: Typical output characteristics(  ) DRAIN-SOURCE VOLTAGE: VDS ( V) Fig.3: Typical output characteristics(   ) 0.01 0.1 DRAIN-SOURCE VOLTAGE : VDS ( V ) Fig.1 Maximum Safe Operating Aera GATE THRESHOLD VOLTAGE: VGS(th) ( V) 100 VDS= 10V Pulsed DRAIN CURRENT : ID ( A) 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 6 5 4 3 2 1 0 -50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE: R DS(on) ( ) VDS= 10V ID = 1mA 10 VGS= 10V Pulsed 1 1 0.1 0.1 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 10 100 0.001 0 1 2 3 4 5 6 7 GATE-SOURCE VOLTAGE : VGS ( V) Fig.4 Typical Transfer Characteristics 0 50 100 150 0.01 0.1 CHANNEL TEMPERATURE: Tch ( C) Fig.5 Gate Threshold Voltage vs. Channel Temperature DRAIN CURRENT : ID ( A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 0.6 STATIC DRAIN-SOURCE ON-STATE RESISTANCE R DS(on) ( ) 0.5 0.4 ID = 18A 0.3 0.2 0.1 0 0 5 10 15 GATE-SOURCE VOLTAGE : VGS ( V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE: R DS(on) ( ) 0.6 0.5 0.4 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) VGS= 10V Pulsed 100 VDS= 10V Pulsed 10 ID = 18A 0.3 0.2 0.1 0 -50 ID = 9A 1 ID = 9A 0.1 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C 0 50 100 150 0.01 0.01 CHANNEL TEMPERATURE: Tch ( C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 0.1 1 10 DRAIN CURRENT : ID ( A) Fig.9 Forward Transfer Admittance vs. Drain Current 100 www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.06 - Rev.A R6018ANX Data Sheet 100 REVERSE DRAIN CURRENT : IDR ( A) VGS= 0V Pulsed CAPACITANCE : C (pF) 10 Ta= 125°C 1 Ta= 75°C Ta= 25°C Ta= -25°C 10000 GATE-SOURCE VOLTAGE : VGS ( V) 15 Ta= 25°C VDD = 300V ID = 18A R G= 10 Pulsed 1000 C is s C os s 10 100 C rs s 5 0.1 10 Ta= 25°C f= 1MHz VGS= 0V 0.1 1 10 100 1000 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD ( V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 DRAIN-SOURCE VOLTAGE : VDS ( V) Fig.11 Typical Capacitance vs. Drain-Source Voltage 0 0 10 20 30 40 50 60 70 TOTAL GATE CHARGE : Qg (nC) Fig.12 Dynamic Input Characteristics 1000 REVERSE RECOVERY TIME: trr (ns) 10000 tf SWITCHING TIME : t (ns) 1000 td(off) 100 Ta= 25°C VDD = 300V VGS= 10V R G= 10 Pulsed 100 Ta= 25°C di / dt= 100A /  s VGS= 0V Pulsed 10 0.1 1 10 100 REVERSE DRAIN CURRENT : IDR ( A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current 10 tr 1 0.01 0.1 1 10 100 DRAIN CURRENT : ID ( A) Fig.14 Switching 　Characteristics td(on) 10 NORMARIZED TRANSIENT THERMAL Ta = 25°C Single Pulse Rth（ch-a）（t） = ｒ（t）×Rth（ch-a） R th（ch-a） = 53.8 °C/W 1 RESISTANCE : r (t) 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.06 - Rev.A R6018ANX Measurement circuit Pulse width VGS ID RL D.U.T. RG VDD VDS Data Sheet VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement circuit Fig.3-2 Avalanche waveform www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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