R6046FNZ

Data Sheet 10V Drive Nch MOSFET R6046FNZ  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-3PF 4.5 5.5 15.5 φ3.6 10.0 3.0 0.75  Application Switching (1) Gate (2) Drain (3) Source 14.8 (1) (2) 2.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 26.5 16.5 14.5 0.44 16.5 3.5 2.0 2.0 3.0 2.0 (3) 0.9 5.45 5.45  Packaging specifications Type R6046FNZ Package Code Basic ordering unit (pieces) Bulk 360   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25°C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 600 30 46 115 46 115 23 142 120 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP *1 IS ISP IAS EAS PD Tch Tstg *3 *1 *2 *2 *4 *3 Limited only by maximum channel temperature allowed. *4 TC=25°C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 1.04 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A R6046FNZ  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 600 3.0 21 Typ. 75 35 6100 3600 90 77 150 230 80 150 40 60 Max. 100 100 5.0 93 Unit nA V A V Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA Data Sheet Drain-source breakdown voltage V(BR)DSS m ID=23A, VGS=10V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=23A VDS=25V VGS=0V f=1MHz VDD 300V, ID=23A VGS=10V RL=13.04 RG=10 VDD 300V ID=46A VGS=10V Body diode characteristics (Source-Drain) Parameter Forward voltage Reverse recovery time *Pulsed Symbol VSD * trr * Min. - Typ. 145 Max. 1.5 - Unit V ns Conditions IS=12.5A, VGS=0V IS=46A, di/dt=100A/μs www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A R6046FNZ Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 24 22 20 18 Drain Current : ID [A] VGS=10.0V VGS=8.0V VGS=6.5V Ta=25°C pulsed VGS=6.0V 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 40 Ta=25°C pulsed VGS=10.0V VGS=8.0V VGS=6.5V Drain Current : ID [A] 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 30 VGS=6.0V 20 10 VGS=5.0V VGS=5.0V 0 9 10 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 100 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] 10 Drain Currnt : ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 6 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 5 1 4 0.1 3 0.01 0.001 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Gate-Source Voltage : VGS [V] 2 -50 0 50 100 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance : RDS(on) [mΩ] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 200 180 160 140 120 100 80 60 40 20 0 -50 0 50 100 150 Channel Temperature : Tch [℃] ID=23A ID=46A VGS=10V pulsed 100 10 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.10 - Rev.A R6046FNZ 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Forward Transfer Admittance Yfs [S] 10 Source Current : Is [A] 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.01 0.01 0.1 1 Drain Current : ID [A] 10 100 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 150 140 Static Drain-Source On-State Resistance RDS(on) [mΩ] 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] 1 0.01 10 ID=23A ID=46A Switching Time : t [ns] Ta=25°C pulsed 10000 100000 Fig.10 Switching Characteristics VDD≒300V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) 1000 td(on) 100 tf tr 0.1 1 Drain Current : ID [A] 10 100 Fig.11 Dynamic Input Characteristics 12 Ta=25°C VDD=300V ID=46A Pulsed Capacitance : C [pF] 100000 Fig.12 Typical Capacitance vs. Drain-Source Voltage 10 Gate-Source Voltage : VGS [V] 10000 Ta=25°C f=1MHz VGS=0V 8 Ciss 1000 6 100 4 Coss 10 2 Crss 1 0 20 40 60 80 100 120 140 160 180 0.01 0.1 1 10 100 1000 Total Gate Charge : Qg [nC] Drain-Source Voltage : VDS [V] 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.10 - Rev.A R6046FNZ 　 Data Sheet Fig.13 Reverse Recovery Time vs. Source Current 1000 Ta=25°C VGS=0V di/dt=100A/μs Pulsed Reverse Recovery Time : trr [ns] 100 10 0 1 10 100 Source Current : IS [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A R6046FNZ  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. 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