R6046FNZ1C9

R6046FNZ1 Datasheet Nch 600V 46A Power MOSFET Outline VDSS 600V RDS(on) (Max.) 0.098 ID 46A PD 694W TO-247 (1) (2) Features (3) 1) Low on-resistance. 2) Fast switching speed. et e Inner circuit (1) Gate (2) Drain (3) Source ∗1 3) Gate-source voltage (VGSS) guaranteed to be 30V. 1 BODY DIODE 4) Drive circuits can be simple. (1) 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant (2) (3) Packaging specifications Packaging Tube - ol Reel size (mm) Tape width (mm) Application - Type Switching Power Supply Basic ordering unit (pcs) 450 Taping code C9 Marking R6046FNZ1 bs Absolute maximum ratings(Ta = 25°C) Symbol Value Unit VDSS 600 V Tc = 25°C ID *1 46 A Tc = 100°C ID *1 23 A ID,pulse *2 115 A Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 142 mJ Avalanche energy, repetitive EAR *4 5.4 mJ Avalanche current IAR *3 23 A Parameter Drain - Source voltage Continuous drain current O Pulsed drain current Power dissipation (Tc = 25°C) PD 694 W Junction temperature Tj 150 °C Tstg 55 to 150 °C dv/dt *5 15 V/ns Range of storage temperature Reverse diode dv/dt www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/13 2016.02 - Rev.B Data Sheet R6046FNZ1 Absolute maximum ratings Parameter Symbol Conditions Values Unit 50 V/ns VDS = 480V, ID = 46A Drain - Source voltage slope dv/dt Tj = 125C Thermal resistance Values Parameter Symbol Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Parameter Max. RthJC - - 0.18 °C/W RthJA - - 30 °C/W Tsold - - 265 °C ol Electrical characteristics(Ta = 25°C) Typ. et e Thermal resistance, junction - case Unit Min. Symbol Values Conditions Unit Min. Typ. Max. V(BR)DSS VGS = 0V, ID = 1mA 600 - - V Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 46A - 700 - V Tj = 25°C - 1 100 Tj = 125°C - - 100 mA IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 3 - 5 V - 0.075 0.098  Tj = 125°C - 0.16 - f = 1MHz, open drain - 1.7 - bs Drain - Source breakdown voltage VDS = 600V, VGS = 0V Zero gate voltage drain current O Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate input resistance www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. IDSS A VGS = 10V, ID = 23A RDS(on) *6 Tj = 25°C RG 2/13  2016.02 - Rev.B Data Sheet R6046FNZ1 Electrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. 15 31 - gfs *6 VDS = 10V, ID = 23A Input capacitance Ciss VGS = 0V - 6230 - Output capacitance Coss VDS = 25V - 4000 - Reverse transfer capacitance Crss f = 1MHz - 85 - Effective output capacitance, energy related Co(er) Effective output capacitance, time related td(on) *6 Turn - on delay time tr *6 Rise time Turn - off delay time Fall time - 175 *6 td(off) *6 pF - 596 - VDD ⋍ 300V, VGS = 10V - 73 - ID = 23A - 120 - RL = 13.0 - 240 480 RG = 10 - 68 136 ns ol tf pF - VGS = 0V VDS = 0V to 480V Co(tr) S et e Transconductance Gate Charge characteristics(Ta = 25°C) Symbol Total gate charge Qg *6 Gate - Source charge Qgs Gate - Drain charge Qgd *6 Gate plateau voltage V(plateau) Unit Min. Typ. Max. VDD ⋍ 300V - 150 - ID = 46A - 40 - VGS = 10V - 65 - VDD ⋍ 300V, ID = 46A - 7.1 - nC V O *6 Values Conditions bs Parameter *1 Limited only by maximum temperature allowed. *2 PW  10s, Duty cycle  1% *3 L ⋍ 500H, VDD = 50V, RG = 25, starting T j = 25°C *4 L ⋍ 500H, VDD = 50V, RG = 25, starting T j = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/13 2016.02 - Rev.B Data Sheet R6046FNZ1 Body diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Symbol Inverse diode continuous, forward current Conditions Unit IS *1 Min. Typ. Max. - - 46 A - - 115 A - - 1.5 V - 145 - ns - 0.74 - C - 9.6 - A - 1200 - A/s Tc = 25°C ISM *2 Forward voltage VSD *6 trr *6 Reverse recovery time *6 Qrr Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt IS = 46A di/dt = 100A/us Tj = 25°C ol Reverse recovery charge VGS = 0V, IS = 46A et e Inverse diode direct current, pulsed Typical Transient Thermal Characteristics Symbol Rth1 Unit 0.055 0.164 K/W bs Rth2 Value 0.821 Value Cth1 0.0236 Cth2 0.134 Cth3 1.09 Unit Ws/K O Rth3 Symbol www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/13 2016.02 - Rev.B Data Sheet R6046FNZ1 Electrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 1000 PW = 100s 100 100 Drain Current : ID [A] 80 60 40 10 Operation in this area is limited by RDS(on) (VGS = 10V) 1 PW = 10ms 0.1 20 Ta=25ºC Single Pulse 0 0.01 0 50 100 150 200 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] ol Junction Temperature : Tj [°C] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 30ºC/W bs Normalized Transient Thermal Resistance : r(t) PW = 1ms et e Power Dissipation : PD/PD max. [%] 120 100 10 1 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single O 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width : PW [s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/13 2016.02 - Rev.B Data Sheet R6046FNZ1 Electrical characteristic curves Fig.5 Avalanche Power Losses Fig.4 Avalanche Current vs Inductive Load 12000 Avalanche Power Losses : PAR [W] 20 15 10 5 Ta = 25ºC VDD = 50V, RG = 25 VGF = 10V, VGR = 0V 0 0.01 0.1 1 10 10000 8000 6000 4000 2000 0 1.0E+04 100 1.0E+05 1.0E+06 Frequency : f [Hz] ol Coil Inductance : L [mH] Ta=25ºC et e Avalanche Current : IAR [A] 25 Fig.6 Avalanche Energy Derating Curve vs Junction Temperature bs Avalanche Energy : EAS / EAS max. [%] 120 100 80 60 O 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 6/13 2016.02 - Rev.B Data Sheet R6046FNZ1 Electrical characteristic curves Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II) 30 45 VGS= 8.0V 35 25 VGS= 6.0V 20 15 10 VGS= 8.0V 20 VGS= 6.5V et e VGS= 6.5V 30 VGS= 10.0V 25 Drain Current : ID [A] Drain Current : ID [A] 40 Ta=25ºC Pulsed Ta=25ºC Pulsed VGS= 10.0V VGS= 6.0V 15 10 5 VGS= 5.0V VGS= 5.0V 5 0 0 0 10 20 30 40 0 50 Drain - Source Voltage : VDS [V] 2 ol VGS= 6.5V VGS= 10.0V VGS= 8.0V VGS= 7.0V 35 Ta=150ºC Pulsed 30 VGS= 6.0V 25 20 VGS= 5.5V 15 O 10 VGS= 5.0V 5 10 20 VGS= 6.0V VGS= 5.5V 15 10 VGS= 5.0V 5 VGS= 4.5V VGS= 4.5V 0 0 5 VGS= 10.0V VGS= 8.0V VGS= 7.0V VGS= 6.5V Ta=150ºC Pulsed 25 Drain Current : ID [A] bs 40 4 Fig.10 Tj = 150°C Typical Output Characteristics(II) 30 45 3 Drain - Source Voltage : VDS [V] Fig.9 Tj = 150°C Typical Output Characteristics(I) Drain Current : ID [A] 1 0 20 30 40 50 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 Drain - Source Voltage : VDS [V] 7/13 2016.02 - Rev.B Data Sheet R6046FNZ1 Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics 900 100 VDS= 10V Plused 850 10 800 Drain Current : ID [A] 750 700 650 600 1 et e Drain - Source Breakdown Voltage : V(BR)DSS [V] Electrical characteristic curves 0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= 25ºC 0.01 550 500 0.001 -50 0 50 100 150 0 1 Junction Temperature : Tj [°C] 3 4 5 6 7 8 Gate - Source Voltage : VGS [V] ol Fig.13 Gate Threshold Voltage vs. Junction Temperature 5 Fig.14 Transconductance vs. Drain Current 100 4 O 3 VDS= 10V Plused Transconductance : gfs [S] VDS= 10V ID= 1mA Plused bs Gate Threshold Voltage : VGS(th) [V] 2 2 -50 -25 0 25 50 75 1 Ta= 25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 0.01 0.01 100 125 150 Junction Temperature : Tj [°C] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10 0.1 1 10 100 Drain Current : ID [A] 8/13 2016.02 - Rev.B Data Sheet R6046FNZ1 Electrical characteristic curves 0.3 Ta=25ºC Pulsed ID = 46A 0.1 0 0 2 4 6 8 0.15 VGS= 10V Plused 0.1 ID = 46A et e 0.2 ID = 23A Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [] Static Drain - Source On-State Resistance : RDS(on) [] Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage ID = 23A 0.05 0 -50 -25 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 0 25 50 75 100 125 150 ol Junction Temperature : Tj [ºC] 1 VGS= 10V Plused bs Static Drain - Source On-State Resistance : RDS(on) [] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Ta=125ºC Ta=75ºC Ta=25ºC Ta= 25ºC O 0.1 0.01 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/13 2016.02 - Rev.B Data Sheet R6046FNZ1 Electrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy Ciss 1000 Coss 100 Ta=25ºC f = 1MHz VGS = 0V Crss 1 Ta=25ºC 40 30 et e Capacitance : C [pF] 10000 10 Coss Stored Energy : EOSS [uJ] 100000 20 10 0 0.01 0.1 1 10 100 1000 0 600 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics Fig.20 Switching Characteristics bs VDD ≒ 300V VGS = 10V RG= 10 Ta = 25ºC Pulsed 10000 td(off) tf 1000 td(on) 100 O 10 tr Gate - Source Voltage : VGS [V] 10 100000 Switching Time : t [ns] 400 ol Drain - Source Voltage : VDS [V] 200 1 0.01 0.1 8 6 4 Ta = 25ºC VDD= 300V ID= 46A Pulsed 2 0 1 10 0 100 40 60 80 100 120 140 160 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20 10/13 2016.02 - Rev.B Data Sheet R6046FNZ1 Electrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 10000 VGS=0V Pulsed Reverse Recovery Time : trr [ns] 10 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= 25ºC 0.1 1000 et e Inverse Diode Forward Current : IS [A] 100 100 10 Ta=25ºC VGS = 0V di / dt = 100A / s Pulsed1 1 0.01 0.0 0.5 1.0 0 1.5 Source - Drain Voltage : VSD [V] 1 10 100 O bs ol Inverse Diode Forward Current : IS [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 11/13 2016.02 - Rev.B Data Sheet R6046FNZ1 Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms Pulse width ID VDS RL D.U.T. 50% 10% VDD RG 90% 50% 10% VGS VDS 10% 90% td(on) 90% td(off) tr Fig.2-1 Gate Charge Measurement Circuit VGS Fig.2-2 Gate Charge Waveform VG ID VDS Qg RL VGS D.U.T. IG(Const.) toff et e ton tf Qgs VDD Qgd Charge Fig.3-1 Avalanche Measurement Circuit IAS ol VGS D.U.T. RG Fig.3-2 Avalanche Waveform VDS L V(BR)DSS IAS VDD VDD bs EAS = Fig.4-1 dv/dt Measurement Circuit VGS IAS D.U.T. V(BR)DSS V(BR)DSS - VDD 2 L IAS Fig.4-2 dv/dt Waveform VDS L V(BR)DSS IAS VDD VDD O RG 1 2 Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform IF trr 0 Irr 10% Irr drr / dt Irr 90% Irr 100% www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 12/13 2016.02 - Rev.B Data Sheet R6046FNZ1 Dimensions (Unit : mm) bs ol et e TO-247 DIM O A A1 A2 b b1 b2 c D D1 E e N L L1 ΦP Q S MILIMETERS MIN MAX 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.20 0.61 0.80 20.80 21.34 17.43 17.83 15.75 16.13 5.45 3.00 19.81 20.57 3.81 4.32 3.55 3.65 5.59 6.20 6.15 INCHES MIN 0.190 0.090 0.075 0.045 0.075 0.115 0.024 0.819 0.686 0.620 MAX 0.205 0.100 0.085 0.055 0.087 0.126 0.031 0.840 0.702 0.635 0.215 3.000 0.780 0.150 0.140 0.220 0.810 0.170 0.144 0.244 0.240 Dimension in mm / inches www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 13/13 2016.02 - Rev.B Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used. However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PGA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. 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Rev.004 Datasheet General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative. 3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001