RB451F

RB451F Diodes Shottky barrier diode RB451F Application Low current rectification External dimensions (Unit : mm) Lead size figure (Unit : mm) 1.3 2.0± 0.2 0.3± 0.1 各リードとも Each lead has same dimensions 同寸法 (3) 1.25±0. 1 2.1±0. 1 Features 1) Small mold type. (UMD3) 2) Low VF 3) High reliability. (2) 0.65 0.9M IN . 0.8M IN 0～ 0.1 0.1Min (1) （ 0.65） 0.7± 0.1 0.9± 0.1 UMD3 Construction Silicon epitaxial planer （ 0.65） 1.3± 0.1 Structure ROHM : UMD3 JEDEC : S OT-323 JEITA : S C-70 do t (year week facto ry) Taping dimensions (Unit : mm) 4.0±0.1 2.0 ±0.05 φ1 .5 5±0 .05 0.3±0.1 1.75 ±0 .1 3.5±0 .0 5 8.0±0.2 2.4±0.1 5.5±0.2 2.25±0.1 　　　　 0 4.0±0 .1 φ0 .5±0 .0 5 0～0.1 2.4±0.1 1.25±0 .1 Absolute maximum ratings (Ta=25°C) Param eter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak（60Hz・1cyc） Junction tem perature Storage tem peratue Sym bol VRM VR Io IFSM Tj Tstg Lim its 40 40 100 1 125 -40 to +125 Unit V V mA A ℃ ℃ Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF1 VF2 IR Ct Min. - Typ. 6.0 Max. 0.55 0.34 30 - Unit V V µA pF Conditions IF=100mA IF=10mA VR=10V VR=10V , f=1MHz Rev.B 1.6 0.15± 0.05 1/3 RB451F Diodes Electrical characteristic curves (Ta=25°C) 100 10000 Ta=125℃ Ta=125℃ 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75℃ Ta=75℃ 100 10 1 Ta=-25℃ Ta=25℃ 1 Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 10 0.1 0.1 0.01 0.01 0 100 200 300 400 500 600 1 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 35 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 470 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 310 300 290 280 270 AVE:281.5mV 30 REVERSE CURRENT:IR(uA) Ta=25℃ IF=10mA n=30pcs 460 450 440 430 AVE:439.5mV Ta=25℃ IF=100mA n=30pcs 25 20 15 10 5 0 AVE:0.928uA Ta=25℃ VR=10V n=10pcs 420 260 VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 20 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 30 Ifsm 1cyc 8.3ms 18 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 16 14 12 10 8 6 4 2 0 Ct DISPERSION MAP Ta=25℃ f=1MHz VR=10V n=10pcs RESERVE RECOVERY TIME:trr(ns) 25 20 15 10 5 15 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 5 AVE:5.50A 0 IFSM DISRESION MAP AVE:5.81pF AVE:6.20nS 0 trr DISPERSION MAP 15 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Rth(j-a) 10 8.3ms 8.3ms 1cyc 10 100 Rth(j-c) Mounted on epoxy board IM=10mA IF=100mA time 5 5 10 1ms 300us 0 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 TIME:t(ms) IFSM-t CHARACTERISTICS 1 10 100 1 0.001 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 Rev.B 2/3 RB451F Diodes 0.1 0.08 0.07 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.06 0.25 0.2 0.15 D=1/2 0.1 0.05 0 Sin(θ＝180) DC REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) DC D=1/2 Sin(θ＝180) 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ 0.05 0.04 Sin(θ＝180) 0.03 0.02 0.01 0 DC D=1/2 0.06 0.04 0.02 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 10 20 30 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 25 50 75 10 0 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 0.2 0.15 0.1 0.05 0 0 25 DC D=1/2 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) 50 75 1 00 1 25 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1