RB715W

Data Sheet Shottky barrier diode RB715W Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.15±0.05 1.6± 0.2 0.3±0.1 　　　 0.05 0.1Min Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.2±0.1 　　-0.05 (2) 0.7 (3) 1.6±0.2 0.7 0.8±0.1 0～0.1 0.7 0.6 EMD3 0.6 (1) 0.55±0.1 0.7±0.1 Construction Silicon epitaxial planar 0.5 0.5 1.0±0.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 φ1.5 0.1 　　　　　0 0 1.75±0.1 0.3±0.1 3.5±0.05 1.8±0.2 5.5±0.2 1.8±0.1 φ0.5±0.1 0～0.1 8.0±0.2 0.9±0.2 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 30 200 125 40 to 125 Unit V V mA mA °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Ct Min. - Typ. 2.0 Max. 0.37 1 - Unit V μA pF Conditions IF=1mA VR=10V VR=1.0V f=1.0MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C 1.3 RB715W Data Sheet 100 1000 Ta=125℃ Ta=125℃ 10 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75℃ 10 1 0.1 0.01 0.001 Ta=75℃ 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 f=1MHz Ta=-25℃ Ta=25℃ Ta=25℃ Ta=-25℃ 1 0.1 0.01 0 500 1000 1500 0 10 20 30 0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 1 10 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 290 280 270 260 250 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 AVE:0.083nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1mA n=30pcs 0.9 Ta=25℃ VR=10V n=30pcs 9 8 7 6 5 4 3 2 1 0 Ta=25℃ f=1MHz VR=0V n=10pcs AVE:267.4mV AVE:2.02pF VF DIPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 20 10 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 8.3ms 8.3ms 1cyc 9 8 7 6 5 4 3 2 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t 10 10 5 AVE:7.30A 0 5 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board IM=1mA IF=10mA time 0.04 Per diode 0.003 Per diode 1000 1ms REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.03 D=1/2 0.02 Sin(θ＝180) DC Rth(j-a) 0.002 D=1/2 DC 0.001 Sin(θ＝180) 300us 100 Rth(j-c) 0.01 10 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0.00 0.01 0.02 0.03 0.04 0.05 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.C RB715W Data Sheet 0.1 Per diode 0.1 VR D=t/T VR=20V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 0.06 0.04 0.02 0 0 25 50 DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V Io t T 0.08 0.06 0.04 0.02 0 75 100 125 0 Per diode 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ DC D=1/2 Sin(θ＝180) D=1/2 Sin(θ＝180) 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A