RBR20NS30AFH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
30
V
Io
20
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low V F
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BR20NS30A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
30
V
Reverse voltage
VR
Reverse direct voltage
30
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=120℃Max.
20
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格 香港价格
- 1+23.565341+2.84886
- 10+5.7879810+0.69972
- 50+4.2883050+0.51842
- 100+3.79380100+0.45864
- 500+3.46144500+0.41846
- 1000+3.388481000+0.40964
- 2000+3.339852000+0.40376
- 4000+3.307424000+0.39984
- 国内价格 香港价格
- 1+23.565341+2.84886
- 10+5.7879810+0.69972
- 50+4.2883050+0.51842
- 100+3.79380100+0.45864
- 500+3.46144500+0.41846
- 1000+3.388481000+0.40964
- 2000+3.339852000+0.40376
- 4000+3.307424000+0.39984