RBR3LAM60BTR

RBR3LAM60B Schottky Barrier Diode Data sheet 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ● Outline VR 60 V Io 3 A IFSM 75 A 　 　 　 　 　 　 　 　 　 　 　 　　　 ● Features ● Inner Circuit High reliability Small power mold type Low V F ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 12 Quantity(pcs) 3000 Taping Code TR Marking 02 General rectification ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage V RM VR Duty≦0.5 Reverse direct voltage 60 60 V V Average rectified forward current Io Glass epoxy mounted、 60Hz half sin waveform、resistive load、 Tc=110℃ Max. 3 A Peak forward surge current IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃ 75 A Junction temperature(1) Storage temperature Tj Tstg - 150 -55 ～ 150 ℃ ℃ Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj