RCD040N25

Data Sheet 10V Drive Nch MOSFET RCD040N25  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 0.9 2.3 (1) (2) (3) 2.3 0.8Min. 0.65 0.5 1.0  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RCD040N25 Type Taping TL 2500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C (1) Gate (2) Drain (3) Source (1) (2) (3) Limits 250 30 4 16 4 16 2 1.61 20 150 55 to 150 Unit V V A A A A A mJ W C C 1 BODY DIODE VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP *3 *1,3 *1 IAS *2 EAS *2 PD *4 Tch Tstg *3 Limited only by maximum channel temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case * T C=25°C * Limited only by maximum channel temperature allowed. Symbol Rth (ch-c)* Limits 6.25 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.11 - Rev.A 2.5 0.75 0.9 1.5 9.5 Data Sheet  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 250 3.5 1.2 - Typ. 780 410 30 15 17 15 20 12 9.0 3.5 3.5 Max. 100 10 5.5 1000 - Unit nA V A V Conditions VGS=30V, VDS=0V ID=1mA, V GS=0V VDS=250V, VGS=0V VDS=10V, ID=1mA Drain-source breakdown voltage V(BR)DSS m  ID=2A, VGS=10V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=2A VDS=25V VGS=0V f=1MHz VDD 125V, I D=2A VGS=10V RL=62.5 RG=10 VDD 125V, I D=4A VGS=10V RL=31.25 RG=10 , Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=4A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.11 - Rev.A RCD040N25 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 2 Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 4 Ta=25°C Pulsed VGS=10.0V 1.5 Drain Current : ID [A] Drain Current : ID [A] 3 VGS=8.0V VGS=10.0V VGS=8.0V 1 2 VGS=7.0V 0.5 1 VGS=7.0V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 10 VDS=10V pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 8 Gate Threshold Voltage : VGS(th) [V] 10 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 1 Drain Current : ID [A] 6 0.1 4 0.01 2 0.001 0.0 2.0 4.0 6.0 8.0 10.0 Gate-Source Voltage : VGS [V] 0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 2500 VGS=10V pulsed 2000 ID=4.0A Static Drain-Source On-State Resistance RDS(on) [mW ] 1500 ID=2.0A 1000 1000 500 100 0.01 0 0.1 1 10 -50 -25 0 25 50 75 100 125 150 Drain Current : ID [A] Channel Temperature : Tch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.11 - Rev.A RCD040N25 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed 10 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Forward Transfer Admittance |Yfs| [S] 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C Source Current : IS [A] 1 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.01 0.01 0.01 0.1 1 10 0.0 0.5 1.0 1.5 Drain Current : ID [A] Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 2400 2200 Static Drain-Source On-State Resistance RDS(on) [mW ] 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 2 4 6 8 10 12 14 16 18 20 1 0.01 ID=2.0A ID=4.0A Switching Time : t [ns] Ta=25°C pulsed 1000 td(off) 10000 Fig.10 Switching Characteristics VDD≒125V VGS=10V RG=10W Ta=25°C Pulsed tf 100 10 tr td(on) 0.1 1 10 Gate-Source Voltage : VGS [V] Drain Current : ID [A] Fig.11 Dynamic Input Characteristics 15 Ta=25°C VDD=125V ID=4A Pulsed Gate-Source Voltage : VGS [V] 10 100 1000 Fig.12 Typical Capacitance vs. Drain-Source Voltage Ciss Capacitance : C [pF] Coss 10 5 Ta=25°C f=1MHz VGS=0V 0 0 5 10 15 Total Gate Charge : Qg [nC] 1 0.01 0.1 1 10 100 Crss 1000 Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.11 - Rev.A RCD040N25 　 Data Sheet Fig.13 Reverse Recovery Time vs. Source Current 1000 Ta=25°C Vgs=0V di/dt=100A/us Pulsed Reverse Recovery Time : trr [ns] 100 10 0 1 Source Current : IS [A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.11 - Rev.A Data Sheet  Measurement circuits Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. 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