RCX120N25

Data Sheet 10V Drive Nch MOSFET RCX120N25  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 15.0 12.0 Features 1) Low on-resistance. 2) High speed switching. 3) Gate-source voltage VGSS garanteed to be ±30V 4) High Power Package (TO-220FM). 8.0 14.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6  Application Switching  Inner circuit ∗1  Packaging specifications Type Package Code Basic ordering unit (pieces) RCX120N25 Bulk 500  (1) Gate (2) Drain (3) Souce (1) (2) (3) 1 BODY DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation(Tc=25C) Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 T ch=25C Continuous Limits 250 30 Unit V V A A A A A mJ W C C VDSS VGSS ID IDP IS ISP IAS EAS PD Tch Tstg *3 *1 *3 *1 *2 *2 12 48 12 48 6 10.5 40 150 55 to 150 Pulsed Continuous Pulsed *3 Limited only by maximum channel temperature allowed.  Thermal resistance Parameter Channel to Case * T C=25C Symbol Rth (ch-c) * Limits 3.125 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A RCX120N25  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) RDS (on) * l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 250 3 3.25 - Typ. 180 1800 100 60 33 65 45 20 35 15 12 Max. 100 10 5 235 - Unit nA V A V Conditions VGS=30V, VDS=0V ID=1mA, V GS=0V VDS=250V, VGS=0V VDS=10V, ID=1mA Drain-source breakdown voltage V(BR)DSS m  ID=6A, VGS=10V S pF pF pF ns ns ns ns nC nC nC ID=6A, VDS=10V VDS=25V VGS=0V f=1MHz ID=6A, VDD 125V VGS=10V RL=20.83 RG=10 ID=12A, VDD 125V VGS=10V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=12A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A RCX120N25 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 15 Ta=25°C Pulsed VGS=10.0V VGS=8.0V 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 6 Ta=25°C Pulsed 5 VGS=10.0V VGS=8.0V Drain Current : ID [A] 4 VGS=7.0V Drain Current : ID [A] 10 3 5 VGS=7.0V 2 VGS=6.5V VGS=6.5V VGS=6.0V 0 0 1 2 3 4 5 6 7 8 9 10 Drain-Source Voltage : VDS [V] 1 VGS=6.0V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 100 VDS=10V pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Gate Threshold Voltage : VGS(th) [V] 6 8 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed Drain Currnt : ID [A] 1 0.1 4 0.01 0.001 2 0.0001 0.00001 0 1 2 3 4 5 6 7 8 9 10 Gate-Source Voltage : VGS [V] 0 -50 0 50 100 150 Channel Temperature : T ch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10 Static Drain-Source On-State Resistance :RDS(on)[Ω] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 0.5 VGS=10V pulsed 0.4 1 0.3 ID=12A 0.2 0.1 ID=6A 0.1 0.01 0.001 0 0.01 0.1 1 10 100 -50 0 50 100 150 Drain Current : ID [A] Channel Temperature : Tch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.10 - Rev.A RCX120N25 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed Forward Transfer Admittance:Yfs [S] 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed 10 Source Current : Is [A] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.1 0.01 0.01 0.01 0.1 1 Drain Current : ID [A] 10 100 0 0.5 1 1.5 2 Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 0.4 Ta=25°C Pulsed 0.3 Switching Time : t [ns] ID=12.0A 10000 Fig.10 Switching Characteristics Static Drain-Source On-State Resistance RDS(on)[Ω] 1000 tf td(off) 100 td(on) VDD≒125V VGS=10V RG=10Ω Ta=25°C Pulsed ID=6.0A 0.2 0.1 10 tr 0 0 5 10 15 20 Gate-Source Voltage : VGS [V] 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.11 Dynamic Input Characteristics 15 Ta=25°C VDD=125V ID=12A Pulsed 1000 10 Capacitance : C [pF] 10000 Fig.12 Typical Capacitance vs. Drain-Source Voltage Gate-Source Voltage : VGS [V] Ciss 100 Coss 5 10 Ta=25°C f=1MHz VGS=0V 0 0 5 10 15 20 25 30 35 40 45 50 55 Total Gate Charge : Qg [nC] 1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] Crss www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.10 - Rev.A RCX120N25 　 Data Sheet Fig.13 Reverse Recovery Time vs. Source Current 1000 Ta=25°C Vgs=0V di/dt=100A/us Pulsed Reverse Recovery Time : trr [ns] 10 Drain Current : ID [ A ] 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs 1 PW = 1ms PW = 10ms 0.1 DC Operation Ta=25°C Single Pulse 100 10 1 10 Source Current : IS [A] 100 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1 0.1 0.01 0.001 Rth(ch-a)=80.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A RCX120N25  Measurement circuits Pulse width VGS ID RL D.U.T. RG VDD VDS Data Sheet VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A