RCX330N25

Data Sheet 10V Drive Nch MOSFET RCX330N25  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage VGSS garanteed to be ±30V . 4) High package power. 15.0 12.0 8.0 14.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 Application Switching  Inner circuit ∗1 Packaging specifications Package Code Basic ordering unit (pieces) RCX330N25 Type Bulk 500  (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Absolute maximum ratings (Ta  25°C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Power dissipation (Tc=25°C) Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L≒ 500H, VDD=50V, Rg=25 , starting Tch=25°C *3 Limited only by maximum temperature allowed. Limits 250 30 Unit V V A A A A A mJ W C C VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg *3 *1 *3 *1 *2 *2 33 132 33 132 16.5 74.8 40 150 55 to 150  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 3.13 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.09 - Rev.A RCX330N25  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 250 3 10 Typ. 77 4500 220 130 50 200 120 140 80 25 27 Max. 100 10 5 105 Unit nA V A V Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=250V, VGS=0V VDS=10V, ID=1mA Data Sheet Drain-source breakdown voltage V(BR)DSS m ID=16.5A, VGS=10V S pF pF pF ns ns ns ns nC nC nC ID=16.5A, VDS=10V VDS=25V VGS=0V f=1MHz ID=16.5A, VDD 125V VGS=10V RL=7.6 RG=10 ID=33A, VDD 125V VGS=10V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=33A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.09 - Rev.A RCX330N25 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 35 Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 35 VGS=10.0V Ta=25°C Pulsed 30 VGS=10.0V VGS=8.0V 30 VGS=8.0V Drain Current : ID [A] Drain Current : ID [A] 25 25 20 20 VGS=7.0V 15 15 VGS=7.0V 10 10 VGS=6.5V VGS=6.0V VGS=5.5V 5 VGS=6.5V VGS=6.0V VGS=5.5V 5 0 0 1 2 3 4 5 Drain-Source Voltage : VDS [V] 0 0 10 20 30 40 50 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 100 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 6 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 5 Drain Currnt : ID [A] 1 4 0.1 3 0.01 0.001 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 Gate-Source Voltage : VGS [V] 2 -50 0 50 100 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 200 180 Static Drain-Source On-State Resistance RDS(on) [mW ] 160 140 120 100 ID=16.5A 80 60 40 20 ID=33A VGS=10V pulsed 100 10 0.01 0 0.1 1 Drain Current : ID [A] 10 100 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.09 - Rev.A RCX330N25 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Forward Transfer Admittance |Yfs | [S] 10 Source Current : Is [A] 10 100 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.1 0.01 0.01 0.01 0.1 1 Drain Current : ID [A] 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 0.5 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] 0.4 1000 Switching Time : t [ns] ID=16.5A 0.3 ID=33.0A 10000 Fig.10 Switching Characteristics tf VDD≒125V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) 100 td(on) 0.2 tr 10 0.1 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.11 Dynamic Input Characteristics 14 Ta=25°C VDD=125V ID=33A Pulsed 1000 10000 Fig.12 Typical Capacitance vs. Drain-Source Voltage 12 Ciss Gate-Source Voltage : VGS [V] 10 Capacitance : C [pF] 8 6 Coss 100 4 Ta=25°C f=1MHz VGS=0V 10 0 10 20 30 40 50 60 70 80 90 0.01 0.1 1 10 100 1000 Total Gate Charge : Qg [nC] Drain-Source Voltage : VDS [V] Crss 2 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.09 - Rev.A RCX330N25 　 Data Sheet Fig.13 Maximum Safe Operating Area 1000 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 100 Drain Current : ID [ A ] Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Ta=25°C Single Pulse 1 10 0.1 1 PW = 1ms 0.1 PW = 10ms 0.01 0.001 Rth(ch-a)=44.9°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.09 - Rev.A RCX330N25  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A