RCX080N25

Data Sheet 10V Drive Nch MOSFET RCX080N25  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 15.0 12.0 8.0 14.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RCX080N25 Bulk 500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C (1) Gate (2) Drain (3) Source (1) (2) (3) Limits 250 30 8 32 8 32 4 4.66 35 150 55 to 150 Unit V V A A A A A mJ W C C 1 BODY DIODE VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP *1,3 IS ISP IAS *1 *2 EAS *2 PD *4 Tch Tstg *3 Limited only by maximum channel temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case * T C=25°C Symbol * Rth (ch-c) Limits 3.57 Unit C / W * Limited only by maximum channel temperature allowed. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.11 - Rev.A RCX080N25  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 250 3.0 2.2 Typ. 460 840 50 25 22 28 28 14 15 6.25 5.5 Max. 100 10 5.0 600 Unit nA V A V Conditions VGS=30V, VDS=0V ID=1mA, V GS=0V VDS=250V, VGS=0V VDS=10V, ID=1mA Data Sheet Drain-source breakdown voltage V(BR)DSS m  ID=4A, VGS=10V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=4A VDS=25V VGS=0V f=1MHz VDD 125V, I D=4A VGS=10V RL=31.25 RG=10 VDD 125V, I D=8A VGS=10V RL=15.62 RG=10 , Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=8A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.11 - Rev.A RCX080N25 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 2 Ta=25°C pulsed VGS=10.0V 1.5 Drain Current : ID [A] VGS=8.0V 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 8 Ta=25°C pulsed VGS=10.0V 6 Drain Current : ID [A] VGS=8.0V 1 VGS=7.0V 4 0.5 2 VGS=7.0V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 10 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 8 10 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 1 Drain Current : ID [A] 6 0.1 4 0.01 2 0.001 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] 0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : T ch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 2000 1800 Static Drain-Source On-State Resistance RDS(on) [mW ] 1600 1400 1200 1000 800 600 400 200 ID=4.0A ID=8.0A VGS=10V pulsed 1000 100 10 0.01 0 0.1 1 Drain Current : ID [A] 10 100 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.11 - Rev.A RCX080N25 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed 10 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Forward Transfer Admittance |Yfs| [S] 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Source Current : IS [A] 1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 0.01 0.1 1 10 0.0 0.5 1.0 1.5 Drain Current : ID [A] Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1500 Ta=25°C pulsed 1000 Switching Time : t [ns] 1100 ID=8.0A ID=4.0A 700 10000 Fig.10 Switching Characteristics Static Drain-Source On-State Resistance RDS(on) [mW ] 1300 VDD≒125V VGS=10V RG=10W Ta=25°C Pulsed tf 900 100 td(off) 500 10 tr td(on) 300 100 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] 1 0.01 0.1 1 10 Drain Current : ID [A] Fig.11 Dynamic Input Characteristics 15 Ta=25°C VDD=125V ID=8A Pulsed 10 Capacitance : C [pF] 10000 Fig.12 Typical Capacitance vs. Drain-Source Voltage Ta=25°C f=1MHz VGS=0V 1000 Ciss Gate-Source Voltage : VGS [V] 100 Coss 5 10 Crss 0 0 5 10 15 20 25 30 Total Gate Charge : Qg [nC] 1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.11 - Rev.A RCX080N25 　 Data Sheet Fig.13 Reverse Recovery Time vs. Source Current 1000 Ta=25°C VGS=0V di/dt=100A/μs Pulsed Reverse Recovery Time : trr [ns] 100 10 0 1 Source Current : IS [A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.11 - Rev.A RCX080N25  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. 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