RCX080N20

Data Sheet 10V Drive Nch MOSFET RCX080N20  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 15.0 12.0 8.0 14.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RCX080N20 Bulk 500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25°C (1) Gate (2) Drain (3) Source (1) (2) (3) Limits 200 30 8 32 8 32 4.0 5.17 40 150 55 to 150 Unit V V A A A A A mJ W C C 1 BODY DIODE VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP *1 IS ISP IAS EAS PD Tch Tstg *1 *2 *2 *4 *3 Limited only by maximum channel temperature allowed. *4 TC=25°C  Thermal resistance Parameter Channel to Case * T C=25°C * Limited only by maximum channel temperature allowed. Symbol * Rth (ch-c) Limits 3.125 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A RCX080N20  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 200 3.25 1.8 Typ. 470 3.6 370 33 17 16 18 20 10 9.0 3.7 3.7 Max. 100 10 5.25 610 Unit nA V A V Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=200V, VGS=0V VDS=10V, ID=1mA Data Sheet Drain-source breakdown voltage V(BR)DSS m ID=4.0A, VGS=10V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=4.0A VDS=25V VGS=0V f=1MHz VDD 100V, ID=4.0A VGS=10V RL=25 RG=10 VDD 100V, ID=8A VGS=10V Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=8A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A RCX080N20 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 2 Ta=25°C pulsed 1.5 Drain Current : ID [A] VGS=10.0V VGS=8.0V VGS=7.5V 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 4 VGS=10.0V VGS=8.0V 3 Drain Current : ID [A] VGS=7.5V Ta=25°C pulsed 1 VGS=7.0V 2 VGS=7.0V 0.5 VGS=6.5V 1 VGS=6.5V VGS=6.0V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 2 4 6 VGS=6.0V 8 10 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 10 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] 8 10 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Drain Current : ID [A] 6 0.1 4 0.01 2 0.001 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] 0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : T ch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 5000 4500 Static Drain-Source On-State Resistance RDS(on) [mW ] 4000 3500 3000 2500 2000 1500 1000 500 ID=4.0A ID=8.0A VGS=10V pulsed 1000 100 10 0.01 0 0.1 1 10 -50 -25 0 25 50 75 100 125 150 Drain Current : ID [A] Channel Temperature : T ch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A RCX080N20 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed 10 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Forward Transfer Admittance |Yfs| [S] Source Current : IS [A] 1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.01 0.01 0.1 Drain Current : ID [A] 1 10 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] Fig.9 Switching Characteristics 10000 VDD≒100V VGS=10V RG=10W Ta=25°C Pulsed 20 18 16 Gate-Source Voltage : VGS [V] 14 12 10 8 6 4 2 1 0.01 0.1 Drain Current : ID [A] 1 10 0 0 Fig.10 Dynamic Input Characteristics tf 1000 Switching Time : t [ns] Ta=25°C VDD=100V ID=8A Pulsed td(off) 100 td(on) 10 tr 5 10 15 20 Total Gate Charge : Qg [nC] Fig.11 Typical Capacitance vs. Drain-Source Voltage 10000 1000 Capacitance : C [pF] Ciss 100 Coss 10 Ta=25°C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] Crss www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A RCX080N20  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A