RCX160N20

Data Sheet 10V Drive Nch MOSFET RCX160N20  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 15.0 12.0 8.0 14.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RCX160N20 Bulk 500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25°C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 200 30 16 64 16 64 8 20.7 40 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP IS ISP *1 *1 IAS *2 EAS *2 PD Tch Tstg *4 *3 Limited only by maximum channel temperature allowed. *4 TC=25°C  Thermal resistance Parameter Channel to Case * T C=25°C * Limited only by maximum channel temperature allowed. Symbol * Rth (ch-c) Limits 3.125 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/6 RCX160N20  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 200 3.25 4 Typ. 135 8 1370 95 50 27 47 42 17 26 10 11 Max. 100 10 5.25 180 Unit nA V A V Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=200V, VGS=0V VDS=10V, ID=1mA Data Sheet Drain-source breakdown voltage V(BR)DSS m ID=8A, VGS=10V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=8A VDS=25V VGS=0V f=1MHz VDD 100V, ID=8A VGS=10V RL=12.5 RG=10 VDD 100V, ID=16A VGS=10V Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Conditions Unit V Is=16A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A RCX160N20 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 8 Ta=25°C Pulsed VGS=10.0V 6 Drain Current : ID [A] VGS=9.0V 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 16 14 12 Drain Current : ID [A] 10 8 6 4 2 VGS=7.0V Ta=25°C Pulsed VGS=10.0V VGS=9.0V VGS=8.0V VGS=8.0V 4 VGS=7.0V 2 VGS=6.0V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 2 4 6 VGS=6.0V 8 10 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 100 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] 10 4 5 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed Drain Currnt : ID [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 3 0.1 2 0.01 1 0.001 0 1 2 3 4 5 6 7 8 9 10 Gate-Source Voltage : VGS [V] 0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [W ] Static Drain-Source On-State Resistance RDS(on) [W ] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 0.5 VGS=10V pulsed 0.4 ID=16A 0.3 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.2 ID=8A 0.1 0.1 0.01 0.1 1 10 100 Drain Current : ID [A] 0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.08 - Rev.A RCX160N20 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Forward Transfer Admittance Yfs [S] 10 Source Current : Is [A] 1 Drain Current : ID [A] 10 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 1 0.1 0.1 0.01 0.01 0.01 0.1 0 0.5 1 1.5 Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 0.5 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [W ] 0.4 1000 ID=8A 0.3 ID=16A Switching Time : t [ns] 10000 Fig.10 Switching Characteristics VDD≒100V VGS=10V RG=10Ω Ta=25°C Pulsed tf 100 td(on) td(off) 0.2 10 0.1 tr 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] 1 0.01 0.1 1 Drain Current : ID [A] 10 Fig.11 Dynamic Input Characteristics 15 Ta=25°C VDD=100V ID=16A Pulsed Gate-Source Voltage : VGS [V] Capacitance : C [pF] 10 10000 Fig.12 Typical Capacitance vs. Drain-Source Voltage 1000 Ciss 100 Coss 5 10 Ta=25°C f=1MHz VGS=0V 0 0 5 10 15 20 25 30 35 Total Gate Charge : Qg [nC] 1 0.01 0.1 1 10 100 Crss 1000 Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.08 - Rev.A RCX160N20 　 Data Sheet Fig.13 Maximum Safe Operating Area 100 Normalized Transient Thermal Resistance : r（t） Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Ta=25°C Single Pulse 10 Drain Current : ID [ A ] PW = 100μs 1 Operation in this area is limited by RDS(on) (VGS = 10V) PW = 1ms 0.1 PW = 10ms Ta=25°C Single Pulse 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [ V ] 1 0.1 0.01 Rth(ch-a)=55.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width ： Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A RCX160N20  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A