RF051VA2STR

RF051VA2S Diodes Fast recovery diode RF051VA2S zDimensions (Unit : mm) zLand size figure (Unit : mm) 1.1 0.17±0.1 　　 0.05 zFeatures 1) Small mold type (TUMD2) 2) Ultra high switching speed 3) High reliability. 0.8 0.5 1.9±0.1 2.0 1.3±0.05 2.5±0.2 zApplications High speed switching TUMD2 zConstructure Silicon epitaxial planar zConstructure 0.8±0.05 0.6±0.2 ROHM : TUMD2 　　　 0.1 dot (year week factory) + day zTaping dimensions (Unit : mm) 2.75 8.0±0.2 3.5±0.05 4.0±0.1 1.43±0.05 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature φ1.0±0.2 　　　　　0 0.9±0.08 Limits 200 200 0.5 5 150 -55 to +150 Symbol VRM VR Io IFSM Tj Tstg 2.8±0.05 0.25±0.05 1.75±0.1 φ1.55±0.1 　　　　　 0 2.0±0.05 4.0±0.1 Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. - Typ. - Max. 0.98 10 Unit V µA trr - - 25 ns Conditions IF=0.5A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR 1/3 RF051VA2S Diodes zElectrical characteristic curves 1000000 100 10 Ta=75℃ Ta=-25℃ 1 0.1 Ta=25℃ 0.01 Ta=150℃ Ta=75℃ 10000 Ta=25℃ 1000 100 Ta=-25℃ 10 10 1 1 0 200 400 600 800 1000 0.1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 50 100 150 200 0 AVE:861.0mV 800 700 600 500 400 AVE:516.3nA 300 200 RESERVE RECOVERY TIME:trr(us) 1cyc Ifsm 8.3ms 25 20 15 4 3 ave=3.68pF AVE:3.13pF 2 1 0 Ct DISPERSION MAP 30 45 30 5 IR DISPERSION MAP 50 35 6 0 VF DISPERSION MAP 40 7 100 840 Ta=25℃ f=1MHz f=1MHz VR=0V VR=0V n=10pcs 8 AVE:6.50A 10 5 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE8.6ns Ifsm 8.3ms 8.3ms 1cyc 10 1 0.1 0 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 850 1 Mounted on epoxy board t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IM=1mA 0.8 1ms D=1/2 tim 300us 100 DC IF=10mA Rth(j-a) 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1 1000 Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 100 30 9 Ta=25℃ VR=200V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 860 900 REVERSE CURRENT:IR(uA) 870 20 10 1000 Ta=25℃ IF=0.5A n=30pcs 880 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 890 FORWARD VOLTAGE:VF(mV) f=1MHz 100000 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ Ta=150℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 1000 0.6 Sin(θ＝180) 0.4 0.2 10 0.01 0 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.5 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 RF051VA2S Diodes 0.1 1.5 DC 0.04 D=1/2 Sin(θ＝180) 0.02 0 0A 0V 1 t DC D=1/2 T VR D=t/T VR=100V Tj=150℃ 0.5 Sin(θ＝180) 50 100 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 200 0A 0V 1 Io t T DC VR D=t/T VR=100V Tj=150℃ D=1/2 0.5 Sin(θ＝180) 0 0 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.06 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.08 1.5 Io 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 ELECTROSTATIC DDISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 AVE:7.70kV 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: RF051VA2STR