RFN5B6STL

Data Sheet Super Fast Recovery Diode RFN5B6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) 6.0 2.0 1.5㼼0.3 5.1㼼0.2 㻌 㻌 㻌 0.1 9.5㼼0.5 1.6 5.5㼼0. 3 0.75 0.9 (1) (2) 0.65㼼0.1 (3) CPD 0.5㼼0.1 2.3 2.3 zStructure 1.0㼼0.2 2.3㼼0.2 2.3㼼0.2 1.6 PMDS 2.5 ձ 0.8 min zFeatures 1)Power mold type(CPD) 2)Low switching Loss 6.0 0.5㼼0.1 zApplications General rectification C0.5 3.0 2.04.2 6.5㼼0.2 2.0 2.3㼼0.2 㻌 㻌 㻌 0.1 3)Low forward voltage ROHM : CPD JEITA : SC-63 ձ Manufacture zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) 㻞㻚㻜㼼㻜㻚㻜㻡 φ 㻝㻚㻡㻡㼼㻜㻚㻝 䚷䚷䚷䚷䚷㻌㻌㻜 㻤㻚㻜㼼㻜㻚㻝 㻜㻚㻠㼼㻜㻚㻝 φ 㻟㻚㻜㼼㻜㻚㻝 㻤㻚㻜㼼㻜㻚㻝 㻞㻚㻣㼼㻜㻚㻞 zAbsolute Maximum Ratings(Tl=25°C) Parameter 㻝㻜㻚㻝㼼㻜㻚㻝 㻝㻜㻚㻝㼼㻜㻚㻝 㻜䡚㻜㻚㻡 㻢㻚㻤㼼㻜㻚㻝 㻝㻟㻚㻡㼼㻜㻚㻞 㼀㻸 㻝㻢㻚㻜㼼㻜㻚㻞 㻣㻚㻡㼼㻜㻚㻜㻡 㻞㻚㻡㼼㻜㻚㻝 㻠㻚㻜㼼㻜㻚㻝 Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty䍺0.5 600 V Reverse voltage VR Direct voltage 600 V Average rectified foward current Io 5 A IFSM Forward current surge peak 60Hz half sin wave , Resistive load Tc=82°C 30 A Junction temperature Tj 60Hz half sin wave , Non-repetitive at Tj=25°C 150 °C Storage temperature Tstg 55 to +150 °C zElectrical Characteristics(Tj=25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=5A 䠉 1.3 1.55 V Reverse current IR VR=600V 䠉 0.05 10 μA trr IF=0.5A,IR=1A,Irr=0.25×IR 䠉 28 50 ns Rth(j-c) Junction to case 䠉 䠉 6.0 °C/W Reverse recovery time Thermal resistance WWWROHMCOM Ú2/(-#O,TD!LLRIGHTSRESERVED 1/4 2012.06 - Rev.A Data Sheet 　 RFN5B6S 100000 100 Tj=150°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 10000 10 Tj=150°C Tj=125°C Tj=75°C Tj=25°C 1 Tj=125°C 1000 Tj=75°C 100 Tj=25°C 10 0.1 1 0 500 1000 1500 2000 2500 0 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 200 300 400 500 600 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1000 1420 IF=5A VR=600V Tj=25°C Tj=25°C REVERSE CURRENT:IR(nA) 1400 FORWARD VOLTAGE:VF(mV) 100 1380 1360 1340 AVE:1369mV 100 10 AVE:19.1nA 1320 1300 1 VF DISPERSION MAP IR DISPERSION MAP 1000 100 f=1MHz f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 95 100 10 VR=0V Tj=25°C 90 85 AVE90.7pF 80 75 70 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Ct DISPERSION MAP 2/4 2012.06 - Rev.A Data Sheet 　 RFN5B6S 30 120 IF=0.5A IR=1.0A Irr=0.25×IR ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 80 60 40 IFSM 20 8.3ms RESERVE RECOVERY TIME:trr(ns) AVE:69.5A 100 25 Tj=25°C 20 15 AVE:20.7ns 10 5 1cyc. 0 0 trr DISPERSION MAP IFSM DISPERSION MAP 1000 1000 IFSM 8.3ms 8.3ms time 1cyc. 100 10 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 100 10 1 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS TIME:t(ms) IFSM-t CHARACTERISTICS 100 ELECTROSTATIC DISCHARGE TEST ESD(kV) 4 3 AVE:0.92kV AVE:2.78kV 1 0 C=200pF R=0Ω TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 5 2 100 C=100pF R=1.5kΩ Rth(j-c) 1 0.1 0.001 ESD DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Rth(j-a) 10 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 3/4 2012.06 - Rev.A 9 16 D=0.8 14 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) FORWARD POWER DISSIPATION:Pf(W) 8 D.C. D=0.5 12 half sin wave 10 D=0.2 8 D=0.1 D=0.05 6 4 2 7 0A Io 0V VR t 6 T D.C. 5 D=t/T VR=600V Tj=150°C D=0.8 4 D=0.5 half sin wave 3 D=0.2 2 1 0 D=0.1 D=0.05 0 0 1 2 3 4 5 6 7 8 9 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 0V 90 120 150 VR t D=0.8 7 T 6 60 Io 0A D.C. 8 30 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 9 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Data Sheet 　 RFN5B6S D=0.5 D=t/T VR=600V Tj=150°C 5 half sin wave 4 D=0.2 3 D=0.1 2 D=0.05 1 0 0 30 60 90 120 150 CASE TEMPARATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/4 2012.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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