RFU20TM5S

Super Fast Recovery Diode RFU20TM5S Series Ultra Fast Recovery Dimensions(Unit : mm) Structure Applications General rectification (1) (2) (3) Features 1)Cathode common Single type.(TO-220) 2)Ultra high switching speed (1) (2) (3) Construction Silicon epitaxial planer Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty0.5 Direct voltage 60Hz half sin wave, Resistance load, Limits 530 530 20 100 150 -55to+150 Unit V V A A C C Tc=95C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current IR Reverse recovery time trr Thermal Resistance Rth(j-c) Conditions IF=20A VR=530V IF=0.5A,IR=1A,Irr=0.25×IR junction to case Min. - Typ. 1.65 0.05 23 - Max. 2 10 30 1.8 Unit V μA ns C/W www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2010.01 - Rev.A RFU20TM5S 　 Data Sheet Electrical characteristic curves 100 100000 Tj=150 C REVERSE CURRENT : IR(nA) 1000 f=1MHz Tj=25 C FORWARD CURRENT : IF(A) Tj=150 C 10 Tj=125 C 1000 Tj=125 C Tj=25 C 1 100 10 Tj=25 C 0.1 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 10000 100 1 10 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 600 0 5 10 15 20 25 30 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 1800 Tｊ=25 C IF=20A n=20pcs 100 Tｊ=25 C VR=530V n=20pcs 450 Tｊ=25 C f=1MHz VR=0V n=10pcs AVE : 419pF FORWARD VOLTAGE : VF(mV) REVERSE CURRENT : IR(nA) 1700 AVE : 64.0nA CAPACITANCE BETWEEN TERMINALS : Ct(pF) 430 410 1600 10 390 1500 AVE : 1567mV 370 1400 VF DISPERSION MAP 1 350 IR DISPERSION MAP Ct DISPERSION MAP 300 IFSM 250 8.3ms 1cyc RESERVE RECOVERY TIME : trr(ns) 40 35 30 25 20 15 10 trr DISPERSION MAP Tｊ=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 PEAK SURGE FORWARD CURRENT : IFSM(A) 200 PEAK SURGE FORWARD CURRENT : IFSM(A) AVE : 231.0A 100 IFSM 8.3ms 8.3ms AVE : 22.7ns 150 1cyc 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 100 IFSM DISRESION MAP 1000 5 100 IF=1A IFSM PEAK SURGE FORWARD CURRENT : IFSM(A) t 4 TRANSIENT  THAERMAL IMPEDANCE : Rth ( C/W) ELECTROSTATIC DISCHARGE TEST ESD(KV) IM=100mA 3 10 1ms time 300us Rth(j-a) 100 2 AVE : 0.9kV 1 AVE : 2.32kV 1 Rth(j-c) 0 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 C=200pF R=0 C=100pF R=1.5k 0.1 0.001 0.01 ESD DISPERSION MAP 0.1 1 10 TIME : t(s) Rth-t CHARACTERISTICS 100 1000 www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 2/3 2010.01 - Rev.A RFU20TM5S 　 0A 0V Data Sheet Io VR D=t/T t 30 D=0.8 half sin wave 25 FORWARD POWER DISSIPATION : Pf(W) D=0.1 20 15 10 5 0 0 5 10 15 20 25 30 35 D=0.05 D=0.2 D=0.5 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) D.C. 35 0A Io VR 35 D.C. D=0.8 D=0.5 half sin wave 0V t D=t/T VR=430V Tj=150C T VR=430V Tj=150C 30 25 20 15 30 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 25 20 D.C. D=0.8 D=0.5 T half sin wave 15 D=0.2 10 D=0.1 5 0 D=0.05 D=0.2 10 D=0.1 5 0 0 30 60 90 120 D=0.05 150 0 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) 30 60 90 120 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) 150 www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 3/3 2010.01 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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