RGT30TM65D
Datasheet
650V 15A Field Stop Trench IGBT
Outline
VCES
650V
IC(100°C)
8A
VCE(sat) (Typ.)
1.65V@IC=15A
PD
32W
Features
TO-220NFM
(1)(2)(3)
Inner Circuit
1) Low Collector - Emitter Saturation Voltage
(2)
2) Low Switching Loss
(1) Gate
(2) Collector
(3) Emitter
*1
3) Short Circuit Withstand Time 5μs
(1)
4) Built in Very Fast & Soft Recovery FRD
*1 Built in FRD
(3)
(RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
Packaging Specifications
Applications
Packaging
General Inverter
Reel Size (mm)
-
Tape Width (mm)
-
UPS
Type
Power Conditioner
Welder
Tube
Basic Ordering Unit (pcs)
Packing Code
1,000
C9
Marking
RGT30TM65D
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
VCES
650
V
Gate - Emitter Voltage
VGES
30
V
TC = 25°C
IC
14
A
TC = 100°C
IC
8
A
45
A
Collector Current
Pulsed Collector Current
Diode Forward Current
ICP
TC = 25°C
IF
17
A
TC = 100°C
IF
9
A
45
A
Diode Pulsed Forward Current
Power Dissipation
*1
IFP
*1
TC = 25°C
PD
32
W
TC = 100°C
PD
16
W
Tj
40 to +175
°C
Tstg
55 to +175
°C
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by Tjmax.
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/11
2017.05 - Rev.A
Datasheet
RGT30TM65D
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal Resistance IGBT Junction - Case
Rθ(j-c)
-
-
4.59
°C/W
Thermal Resistance Diode Junction - Case
Rθ(j-c)
-
-
5.44
°C/W
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Collector - Emitter Breakdown
Voltage
Symbol
BVCES
Conditions
IC = 10μA, VGE = 0V
Values
Unit
Min.
Typ.
Max.
650
-
-
V
Collector Cut - off Current
ICES
VCE = 650V, VGE = 0V
-
-
10
μA
Gate - Emitter Leakage Current
IGES
VGE = 30V, VCE = 0V
-
-
200
nA
VGE(th)
VCE = 5V, IC = 10.0mA
5.0
6.0
7.0
V
Tj = 25°C
-
1.65
2.1
V
Tj = 175°C
-
2.15
-
Gate - Emitter Threshold
Voltage
IC = 15A, VGE = 15V
Collector - Emitter Saturation
Voltage
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
VCE(sat)
2/11
2017.05 - Rev.A
Datasheet
RGT30TM65D
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Input Capacitance
Cies
VCE = 30V
-
780
-
Output Capacitance
Coes
VGE = 0V
-
35
-
Reverse Transfer Capacitance
Cres
f = 1MHz
-
13
-
Total Gate Charge
Qg
VCE = 300V
-
32
-
Gate - Emitter Charge
Qge
IC = 15A
-
8
-
Gate - Collector Charge
Qgc
VGE = 15V
-
11
-
Turn - on Delay Time
td(on)
IC = 15A, VCC = 400V
-
18
-
tr
VGE = 15V, RG = 10Ω
-
20
-
Tj = 25°C
-
64
-
Inductive Load
-
75
-
td(on)
IC = 15A, VCC = 400V
-
18
-
tr
VGE = 15V, RG = 10Ω
-
22
-
Tj = 175°C
-
74
-
Inductive Load
-
130
-
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
td(off)
tf
td(off)
tf
Unit
pF
nC
ns
ns
IC = 45A, VCC = 520V
Reverse Bias Safe Operating Area
RBSOA VP = 650V, VGE = 15V
FULL SQUARE
-
RG = 50Ω, Tj = 175°C
VCC ≦ 360V
Short Circuit Withstand Time
tsc
VGE = 15V
5
-
-
μs
Tj = 25°C
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
3/11
2017.05 - Rev.A
Datasheet
RGT30TM65D
FRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Tj = 25°C
-
1.5
1.95
Tj = 175°C
-
1.3
-
-
55
-
ns
-
6.0
-
A
-
0.19
-
μC
-
141
-
ns
-
9.5
-
A
-
0.79
-
μC
IF = 15A
Diode Forward Voltage
VF
Diode Reverse Recovery Time
trr
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery
Charge
Qrr
Diode Reverse Recovery Time
trr
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery
Charge
Qrr
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
IF = 15A
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C
IF = 15A
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C
4/11
V
2017.05 - Rev.A
Datasheet
RGT30TM65D
Electrical Characteristic Curves
Fig.2 Collector Current vs. Case Temperature
40
16
35
14
Collector Current : IC [A]
Power Dissipation : PD [W]
Fig.1 Power Dissipation vs. Case Temperature
30
25
20
15
10
5
10
8
6
4
2
Tj≦175ºC
VGE≧15V
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
60
1000
50
10µs
100
Collector Current : IC [A]
Collector Current : IC [A]
12
10
100µs
1
0.1
TC= 25ºC
Single Pulse
40
30
20
10
0.01
Tj≦175ºC
VGE=15V
0
1
10
100
1000
0
Collector To Emitter Voltage : VCE[V]
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
200
400
600
800
Collector To Emitter Voltage : VCE[V]
5/11
2017.05 - Rev.A
Datasheet
RGT30TM65D
Electrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
45
45
Tj= 25ºC
35
VGE= 20V
VGE= 12V
30
VGE= 10V
25
20
15
10
Tj= 175ºC
40
Collector Current : IC [A]
Collector Current : IC [A]
40
VGE= 15V
VGE= 8V
5
VGE= 20V
35
30
VGE= 15V
25
VGE= 12V
15
VGE= 8V
10
5
0
0
0
1
2
3
4
5
0
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
30
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
4
VCE= 10V
25
Collector Current : IC [A]
VGE= 10V
20
20
15
10
Tj= 175ºC
5
Tj= 25ºC
0
0
2
4
6
8
10
IC= 30A
3
IC= 15A
2
IC= 8A
1
0
25
12
Gate To Emitter Voltage : VGE [V]
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
VGE= 15V
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
6/11
2017.05 - Rev.A
Datasheet
RGT30TM65D
Electrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
20
Tj= 25ºC
15
IC= 8A
IC= 15A
10
IC= 30A
5
0
5
10
15
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
Tj= 175ºC
15
IC= 8A
10
IC= 15A
IC= 30A
5
0
20
5
Gate To Emitter Voltage : VGE [V]
10
15
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
1000
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
VCC=400V, IC=15A
VGE=15V, Tj=175ºC
Inductive load
Switching Time [ns]
Switching Time [ns]
20
tf
100
td(off)
tf
100
td(off)
tr
tr
td(on)
10
0
10
20
30
40
0
Collector Current : IC [A]
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
td(on)
10
10
20
30
40
50
Gate Resistance : RG [Ω]
7/11
2017.05 - Rev.A
Datasheet
RGT30TM65D
Electrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
vs. Collector Current
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
10
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
10
1
Eoff
Eon
0.1
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
1
Eoff
Eon
0.1
VCC=400V, IC=15A
VGE=15V, Tj=175ºC
Inductive load
0.01
0.01
0
10
20
30
0
40
Collector Current : IC [A]
20
30
40
50
Gate Resistance : RG [Ω]
Fig.16 Typical Gate Charge
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
10000
Cies
100
Coes
10
Cres
f=1MHz
VGE=0V
Tj=25ºC
1
0.01
Gate To Emitter Voltage : VGE [V]
15
1000
Capacitance [pF]
10
10
5
VCC=300V
IC=15A
Tj=25ºC
0
0.1
1
10
100
0
Collector To Emitter Voltage : VCE[V]
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
10
20
30
40
Gate Charge : Qg [nC]
8/11
2017.05 - Rev.A
Datasheet
RGT30TM65D
Electrical Characteristic Curves
Fig.17 Typical Diode Forward Current
vs. Forward Voltage
Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Current
400
45
Reverse Recovery Time : trr [ns]
Forward Current : IF [A]
40
35
30
25
20
15
Tj= 175ºC
10
Tj= 25ºC
5
VCC=400V
diF/dt=200A/µs
Inductive load
300
200
Tj= 175ºC
100
Tj= 25ºC
0
0
0
0.5
1
1.5
2
2.5
0
3
Forward Voltage : VF[V]
20
30
40
50
Forward Current : IF [A]
Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current
Fig.19 Typical Diode Reverse Recovery Current
vs. Forward Current
20
2.5
Reverse Recovery Charge : Qrr [µC]
Reverse Recovery Current : Irr [A]
10
15
10
Tj= 175ºC
5
VCC=400V
diF/dt=200A/µs
Inductive load
Tj= 25ºC
0
VCC=400V
diF/dt=200A/µs
Inductive load
2
1.5
1
Tj= 175ºC
0.5
Tj= 25ºC
0
0
10
20
30
40
50
0
Forward Current : IF [A]
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
10
20
30
40
50
Forward Current : IF [A]
9/11
2017.05 - Rev.A
Datasheet
RGT30TM65D
Electrical Characteristic Curves
Fig.21 IGBT Transient Thermal Impedance
10
0.2
Transient Thermal Impedance
: ZthJC [ºC/W]
0.1
D= 0.5
1
Single Pulse
0.01
0.1
0.05 0.02
PDM
t1
t2
Duty=t1/t2
Peak Tj=PDM×ZthJCTC
0.01
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width : t1[s]
Fig.22 Diode Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
10
0.1
0.2 D= 0.5
1
0.1
0.02
0.01 Single Pulse
PDM
0.05
t1
t2
Duty=t1/t2
Peak Tj=PDM×ZthJCTC
0.01
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width : t1[s]
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
10/11
2017.05 - Rev.A
Datasheet
RGT30TM65D
Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
D.U.T.
VGE
10%
VG
90%
Fig.23 Inductive Load Circuit
IC
10%
td(on)
tr
ton
IF
td(off)
tf
toff
trr , Qrr
VCE
diF/dt
VCE(sat)
Irr
Fig.25 Diode Reverce Recovery Waveform
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
Fig.24 Inductive Load Waveform
11/11
2017.05 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
R1102A