RGT20TM65DGC9

RGT20TM65D Datasheet 650V 10A Field Stop Trench IGBT lOutline VCES 650V 6A 1.65V 25W IC (100°C) VCE(sat) (Typ.) PD TO-220NFM (1) (2)(3) lInner Circuit lFeatures (2) 1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss (1) Gate (2) Collector (3) Emitter *1 (1) 3) Short Circuit Withstand Time 5μs *1 Built in FRD 4) Built in Very Fast & Soft Recovery FRD (3) (RFN - Series) 5) Pb - free Lead Plating ; RoHS Compliant lPackaging Specifications Packaging lApplication General Inverter UPS Type Power Conditioner Tube Reel Size (mm) - Tape Width (mm) - Basic Ordering Unit (pcs) 1,000 Packing Code Welder C9 Marking RGT20TM65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES ±30 V TC = 25°C IC 10 A TC = 100°C IC 6 A 30 A Collector Current Pulsed Collector Current Diode Forward Current ICP TC = 25°C IF 13 A TC = 100°C IF 7 A IFP*1 30 A TC = 25°C PD 25 W TC = 100°C PD 12 W Tj -40 to +175 °C Tstg -55 to +175 °C Diode Pulsed Forward Current Power Dissipation *1 Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/11 2019.06 - Rev.B Datasheet RGT20TM65D lThermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 5.84 C/W Thermal Resistance Diode Junction - Case Rθ(j-c) - - 6.70 C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol Conditions BVCES IC = 10μA, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE= 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA 5.0 6.0 7.0 V - 1.65 2.1 V - 2.15 - Gate - Emitter Threshold Voltage VGE(th) VCE = 5V, IC = 6.7mA IC = 10A, VGE = 15V, Collector - Emitter Saturation Voltage VCE(sat) Tj = 25°C Tj = 175°C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 2/11 2019.06 - Rev.B Datasheet RGT20TM65D lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V, - 610 - Output Capacitance Coes VGE = 0V, - 25 - Reverse transfer Capacitance Cres f = 1MHz - 9 - Total Gate Charge Qg VCE = 300V, - 22 - Gate - Emitter Charge Qge IC = 10A, - 6 - Gate - Collector Charge Qgc VGE = 15V - 9 - Turn - on Delay Time td(on) - 12 - - 18 - - 32 - - 104 - - 13 - - 18 - - 34 - - 140 - tr Rise Time Turn - off Delay Time td(off) tf Fall Time Turn - on Delay Time td(on) tr Rise Time Turn - off Delay Time td(off) tf Fall Time IC = 10A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 25°C Inductive Load IC = 10A, VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175°C Inductive Load Unit pF nC ns ns IC = 30A, VCC = 520V, Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V, FULL SQUARE - RG = 50Ω, Tj = 175oC VCC ≤ 360V, Short Circuit Withstand Time tsc VGE = 15V, 5 - - μs Tj = 25oC www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3/11 2019.06 - Rev.B Datasheet RGT20TM65D lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25°C - 1.4 1.9 Tj = 175°C - 1.2 - - 42 - ns - 5.2 - A IF = 8A, Diode Forward Voltage Diode Reverse Recovery Time VF trr IF = 8A, VCC = 400V, diF/dt = 200A/μs, Tj = 25°C V Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr - 0.12 - μC Diode Reverse Recovery Time trr - 116 - ns - 8.1 - A - 0.51 - μC Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. IF = 8A, VCC = 400V, diF/dt = 200A/μs, Tj = 175°C 4/11 2019.06 - Rev.B Datasheet RGT20TM65D lElectrical Characteristic Curves Fig.2 Collector Current vs. Case Temperature 12 10 25 Collector Current : IC [A] Power Dissipation : PD [W] Fig.1 Power Dissipation vs. Case Temperature 30 20 15 10 8 6 4 2 5 Tj ≤ 175ºC, VGE ≥ 15V 0 0 0 25 50 0 75 100 125 150 175 Case Temperature : TC [°C ] 50 75 100 125 150 175 Case Temperature : TC [°C ] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 40 100 Collector Current : IC [A] 1000 Collector Current : IC [A] 25 10μs 10 100μs 1 0.1 30 20 10 Tj ≤ 175ºC, VGE = 15V TC = 25ºC Single Pulse 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE [V] 5/11 2019.06 - Rev.B Datasheet RGT20TM65D lElectrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 30 30 Tｊ = 25ºC VGE = 20V Collector Current : IC [A] Collector Current : IC [A] 25 Tj = 175ºC VGE = 12V VGE = 15V 20 15 VGE = 10V 10 5 25 VGE = 20V VGE = 15V 20 VGE = 12V 15 VGE = 10V 10 VGE = 8V 5 VGE = 8V 0 0 0 1 2 3 4 5 0 Collector To Emitter Voltage : VCE [V] 2 3 4 5 Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 Fig.7 Typical Transfer Characteristics 20 VGE = 15V Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE = 10V Collector Current : IC [A] 1 Collector To Emitter Voltage : VCE [V] 15 10 5 Tj = 175ºC IC = 20A 3 IC = 10A 2 IC = 5A 1 Tj = 25ºC 0 0 0 2 4 6 8 10 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 175 Junction Temperature : Tj [°C ] 6/11 2019.06 - Rev.B Datasheet RGT20TM65D lElectrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Tj = 175ºC Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Tj = 25ºC IC = 20A 15 IC = 10A IC = 5A 10 5 0 IC = 20A 15 IC = 10A IC = 5A 10 5 0 5 10 15 20 5 Gate To Emitter Voltage : VGE [V] 15 20 Gate To Emitter Voltage : VGE [V] Fig.11 Typical Switching Time vs. Collector Current 1000 Fig.12 Typical Switching Time vs. Gate Resistance 1000 Switching Time [ns] tf Switching Time [ns] 10 100 td(off) tr 10 td(on) tf 100 td(off) tr 10 td(on) VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load VCC = 400V, IC = 10A, VGE = 15V, Tj = 175ºC Inductive load 1 1 0 5 10 15 20 0 20 30 40 50 Gate Resistance : RG [Ω] Collecter Current : IC [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 10 7/11 2019.06 - Rev.B Datasheet RGT20TM65D lElectrical Characteristic Curves Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 Switching Energy Losses [mJ] Switching Energy Losses [mJ] Fig.13 Typical Switching Energy Losses vs. Collector Current 10 1 Eoff 0.1 Eon VCC = 400V, VGE = 15V, RG = 10Ω, Tj = 175ºC Inductive load 0.01 1 Eoff Eon 0.1 VCC = 400V, IC = 10A, VGE = 15V, Tj = 175ºC Inductive load 0.01 0 5 10 15 20 0 Fig.15 Typical Capacitance vs. Collector To Emitter Voltage 10000 100 Coes Cres f = 1MHz, VGE = 0V, Tj = 25ºC 1 0.01 30 40 50 Fig.16 Typical Gate Charge 15 Gate To Emitter Voltage : V GE [V] Capacitance [pF] Cies 10 20 Gate Resistance : RG [Ω] Collecter Current : IC [A] 1000 10 10 5 VCE = 300V, IC = 10A, Tj = 25ºC 0 0.1 1 10 100 0 Collector To Emitter Voltage : VCE [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 10 20 30 Gate Charge : Qg [nC] 8/11 2019.06 - Rev.B Datasheet RGT20TM65D lElectrical Characteristic Curves Fig.18 Typical Diode Revese Recovery Time vs. Forward Current 200 Reverse Recovery Time : trr [ns] Fig.17 Typical Diode Forward Current vs. Forward Voltage 30 Forward Current : IF [A] 25 20 15 Tj = 175ºC 10 5 Tj = 25ºC 0 VCC = 400V, diF/dt = 200A/μs Inductive load 150 Tj = 175ºC 100 Tj = 25ºC 50 0 0 1 2 3 0 Forward Voltage : VF [V] 15 20 Fig.20 Typical Diode Rrverse Recovery Charge vs. Forward Current 1 Reverse Recovery Charge : Qrr [μC] Reverse Recovery Current : Irr [A] Tj = 175ºC 8 Tj = 25ºC 4 2 10 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current 10 6 5 VCC = 400V, diF/dt = 200A/μs Inductive load 0 VCC = 400V, diF/dt = 200A/μs Inductive load 0.8 0.6 Tj = 175ºC 0.4 0.2 Tj = 25ºC 0 0 5 10 15 20 0 Forward Current : IF [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 5 10 15 20 Forward Current : IF [A] 9/11 2019.06 - Rev.B Datasheet RGT20TM65D lElectrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance 10 Transient Thermal Impedance : Zθ(j-c) [°C/W] 0.1 D = 0.5 0.2 1 Single Pulse 0.01 0.1 PDM 0.02 t1 0.05 0.01 0.0001 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.001 0.01 0.1 1 10 100 Pulse Width : t1 [s] Fig.22 Diode Transient Thermal Impedance 10 Transient Thermal Impedance : Zθ(j-c) [°C/W] 0.1 0.2 D = 0.5 1 0.1 Single Pulse 0.01 0.02 0.05 PDM t1 t2 Duty = t1/t2 Peak Tj = PDM×Zθ(j-c)+TC 0.01 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width : t1 [s] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 10/11 2019.06 - Rev.B Datasheet RGT20TM65D lInductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. 10% VGE VG 90% Fig.23 Inductive Load Circuit IC td(on) trr , Qrr IF tr ton td(off) 10% tf toff VCE diF/dt Irr VCE(sat) Fig.25 Diode Reverse Recovery Waveform www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. Fig.24 Inductive Load Waveform 11/11 2019.06 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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