RK7002BT116

RK7002B 2.5V Drive Nch MOSFET RK7002B  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) SST3 Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol : RKT  Application Switching  Packaging specifications Type Package Code Basic ordering unit (pieces) RK7002B  Inner circuit (3) Taping T116 3000  ∗2 (2)  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage ∗1 Limits Unit 60 V 20 250 1 150 1 0.2 V mA A mA A W Total power dissipation VGSS ID IDP *1 IS ISP *1 PD *2 Channel temperature Range of storage temperature Tch Tstg 150 55 to +150 C C Symbol Rth (ch-a)* Limits 625 Unit C / W Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) SOURCE (2) GATE (3) DRAIN *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.  Thermal resistance Parameter Channel to ambient * Each terminal mounted on a recommended land. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/5 2010.06 - Rev.B RK7002B Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Min. Typ. Max. Unit Conditions - - 10 A VGS=20V, VDS=0V 60 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=60V, VGS=0V VGS (th) 1.0 - 2.3 V VDS=10V, ID=1mA - 1.7 2.4 - 2.1 3.0 - 2.3 3.2 * RDS (on) ID=250mA, VGS=10V  ID=250mA, VGS=4.5V ID=250mA, VGS=4.0V - 3.0 12.0 l Yfs l * 0.25 - - S ID=250mA, VDS=10V Input capacitance Ciss - 15 - pF VDS=25V - 4.5 - pF VGS=0V 2 - pF f=1MHz 3.5 - ns ID=100mA, VDD 30V Forward transfer admittance ID=10mA, VGS=2.5V Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) * - tr * - 5 - ns VGS=10V td(off) * tf * - 18 28 - ns ns RL 300 RG=10 Rise time Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Forward voltage VSD * Max. 1.2 Unit V Conditions Is=250mA, VGS=0V *Pulsed www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 2/5 2010.06 - Rev.B RK7002B Data Sheet Electrical characteristics curves 0.4 VGS= 10V VGS= 4.5V VGS= 4.0V 0.3 0.2 VGS= 2.8V 0.4 0.3 VGS= 2.8V 0.2 0.1 0.1 Ta= 25C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] Ta= 25C Pulsed DRAIN CURRENT : ID[A] 1 0.5 0.5 VDS= 10V Pulsed 0.1 Ta=125C Ta=75C Ta=25C Ta= -25C 0.01 0.001 VGS= 2.5V VGS= 2.5V 0.0001 0 0 0.2 0.4 0.6 0.8 0 1 DRAIN-SOURCE VOLTAGE : VDS[V] 100 Ta= 25C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] VGS= 2.5V VGS= 4.0V VGS= 4.5V VGS= 10V 10 1 0.1 0.001 0.01 0.1 1 6 8 0 10 100 VGS= 10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 0.1 0.001 0.01 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 0.1 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( IV ) www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 100 VGS= 4.5V Pulsed 10 2.5 3 Ta=125C Ta=75C Ta=25C Ta= -25C 1 0.1 0.001 1 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( III ) 100 1 2 Fig.3 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( II ) 10 1.5 Fig.2 Typical Output Characteristics( II ) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( I ) Ta=125C Ta=75C Ta=25C Ta= -25C 1 GATE-SOURCE VOLTAGE : VGS[V] DRAIN-CURRENT : ID[A] VGS= 4.0V Pulsed 0.5 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-CURRENT : ID[A] 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 4 1 VGS= 2.5V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta= -25C FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] Fig.1 Typical Output Characteristics( I ) 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[] 0 1 0.1 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( IV ) 3/5 VDS= 10V Pulsed 0.1 Ta= -25C Ta=25C Ta=75C Ta=125C 0.01 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current 2010.06 - Rev.B VGS=0V Pulsed 0.1 Ta=125C Ta=75C Ta=25C Ta=-25C 0.01 0.001 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : V SD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage CAPACITANCE : C [pF] 100 Ta=25C f=1MHz VGS=0V 8 1000 Ta=25C Pulsed SWITCHING TIME : t [ns] 1 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[] REVERSE DRAIN CURRENT : Is [A] RK7002B 6 ID= 0.01A 4 ID= 0.25A 2 0 td(off) tf Ta=25C VDD= 30V VGS=10V RG=10 Pulsed 100 10 tr td(on) 1 0 2.5 5 7.5 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.12 Switching Characteristics Ciss 10 Crss Coss 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS [V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 4/5 2010.06 - Rev.B RK7002B Data Sheet Measurement circuits Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 5/5 2010.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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