RP1E075RP

4V Drive Pch MOSFET RP1E075RP  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) MPT6 (Single) Features 1) Low On-resistance. 2) High power package. 3) 4V drive. (6) (5) (4) (1) (2) (3)  Application Switching  Inner circuit (6) (5) (4)  Packaging specifications Type RP1E075RP Package Code Basic ordering unit (pieces) Taping TR 1000  (1) Source (2) Source (3) Gate (4) Drain (5) Drain (1) (6) Drain ∗2 ∗1 (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg *1 Limits 30 20 7.5 30 1.6 30 2.0 150 55 to +150 Unit V V A A A A W C C Continuous Pulsed Continuous Pulsed *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 62.5 Unit C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.08 - Rev.A RP1E075RP  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 9 Typ. 15 22 25 1900 250 250 14 25 100 70 21 5 7 Max. 10 1 2.5 21 31 35 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=7.5A, VGS=10V m ID=4A, VGS=4.5V ID=4A, VGS=4.0V ID=7.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4A, VDD 15V VGS=10V RL=3.8 RG=10 ID=7.5A, VDD 15 VGS=5V RL=2.0 RG=10 Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=7.5A, VGS=0V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.08- Rev.A RP1E075RP  Electrical characteristic curves 　 Data Sheet 10 7 DRAIN CURRENT : -ID[A] 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 VGS= -2.5V DRAIN CURRENT : -ID[A] 6 5 4 3 2 1 0 0 2 4 6 8 10 DRAIN CURRENT : -ID[A] Ta=25°C Pulsed VGS= -10V VGS= -4.5V V VGS= -3.5V GS= -4.0V VGS= -3.0V VGS= -2.8V 7 VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -3.5V VGS= -3.0V VGS= -2.8V VGS= -2.5V Ta=25°C Pulsed 1 VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 0.001 0 1 2 3 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed 100 VGS= -4.0V VGS= -4.5V VGS= -10V VGS= -10V Pulsed 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 VGS= -4.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 10 10 1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10 1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= -4.0V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VDS= -10V Pulsed 10 SOURCE CURRENT : -Is [A] 1000 100 10 VGS=0V Pulsed 1 10 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 10 0.1 0.01 0.1 1 10 100 0.01 0 0.5 1 1.5 DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.08- Rev.A RP1E075RP 　 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SWITCHING TIME : t [ns] Ta=25°C Pulsed ID= -7.5A 1000 td(off) tf Ta=25°C VDD= -15V VGS= -10V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : -VGS [V] 100 10000 10 8 6 4 2 0 0 10 20 Ta=25°C VDD= 15V ID= 7.5A RG=10Ω Pulsed 30 40 50 ID= -4.0A 100 td(on) 10 tr 0 0 5 10 15 1 0.01 0.1 1 10 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 CAPACITANCE : C [pF] Ta=25°C f=1MHz VGS=0V Ciss DRAIN CURRENT : -ID (A) 1000 100 10 Operation in this area is limited by RDS(ON) (VGS=-10V) PW =100us 1000 PW = 10ms PW =1ms 1 DC operation Crss Coss 100 0.01 0.1 1 10 100 0.1 0.01 Ta = 25°C Single Pulse MOUNTED ON CERAMIC BOARD 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Maximum Safe Operating Aera 10 NORMARIZED TRANSIENT THERMAL 　RESISTANCE : r (t) 1 0.1 Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 62.5 °C/W 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.08- Rev.A RP1E075RP  Measurement circuits 　 Pulse Width Data Sheet VGS VGS ID ID RRL L VVDS DS VGS 10% 50% 10% 90% 50% 10% 90% D.U.T. D.U.T. RG RG VVDD DD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS VGS IG(Const.) IG(Const.) RG RG D IID V VDSDS RLRL Qg VGS Qgs Qgd D.U.T. D.U.T. V VDDDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.08- Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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