RP1E125XN

Data Sheet 4V Drive Nch MOSFET RP1E125XN  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) MPT6 (Single) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). (6) (5) (4) (1) (2) (3)  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RP1E125XN Type Taping TR 1000   Inner circuit (6) (5) (4)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 12.5 *1 Unit V V A A A A W C C (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg 36 1.6 36 2.0 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 62.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A RP1E125XN  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 9.0 Typ. 7.5 9.5 10.0 1000 340 170 12 20 55 18 12.7 2.6 6.0 Max. 10 1 2.5 12.0 13.3 14.0 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=12.5A, VGS=10V m ID=12.5A, VGS=4.5V ID=12.5A, VGS=4.0V ID=12.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=6.3A, VDD 15V VGS=10V RL=2.38 RG=10 ID=12.5A, VDD 15V VGS=5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=12.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A RP1E125XN Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics ( Ⅰ) 12.5 Ta=25°C Pulsed 10 VGS=10.0V VGS=4.5V Drain Current : ID [A] VGS=4.0V 7.5 VGS=3.0V 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 12.5 VGS=10.0V VGS=4.5V 10 VGS=3.0V Drain Current : ID [A] 7.5 VGS=4.0V VGS=2.5V 5 VGS=2.5V 2.5 5 2.5 Ta=25°C Pulsed 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VGS=4.0V VGS=4.5V VGS=10V 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.04 - Rev.A RP1E125XN 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 100 100 VDS=10V pulsed VDS=10V pulsed 10 10 Forward Transfer Admittance Yfs [S] Drain Currnt : ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 1 0.1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.01 0.001 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 50 Ta=25°C pulsed 40 ID=6.3A ID=12.5A 30 10 Source Current : Is [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 20 0.1 10 0.01 0.0 0.5 1.0 1.5 2.0 0 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.11 Switching Characteristics 10000 VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed tf td(off) 100 10 Ta=25°C VDD=15V ID=12.5A Pulsed Fig.12 Dynamic Input Characteristics 8 Gate-Source Voltage : VGS [V] 1000 Switching Time : t [ns] 6 4 10 tr td(on) 1 0.01 0.1 1 Drain Current : ID [A] 10 100 2 0 0 5 10 15 20 25 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.04 - Rev.A RP1E125XN 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs 10 Capacitance : C [pF] 1000 Ciss Drain Current : ID [ A ] PW = 1ms 1 PW = 10ms Coss 100 Crss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 100 0.1 Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 DC Operation 0.01 100 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1 0.1 0.01 0.001 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=62.5°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.0001 0.0001 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A RP1E125XN  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A