RQ1C075UN

1.5V Drive Nch MOSFET RQ1C075UN  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). (1) (2) (3) (4) Abbreviated symbol : XH  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RQ1C075UN Taping TR 3000   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a ceramic board. Symbol VDSS VGSS Limits 20 10 7.5 Unit V V A A A A W C C (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗2 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 30 1 30 1.5 150 55 to +150 *1 *2  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a ceramic board. Symbol Rth (ch-a)* Limits 83.3 Unit C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.04 - Rev.A RQ1C075UN  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) Min. 20 0.3 l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * 7 Typ. 11 14 17 20 1400 310 210 15 50 100 85 18 3.2 2.9 Max. 10 1 1.0 16 20 24 40 S pF pF pF ns ns ns ns nC nC nC m Unit A V A V Conditions VGS=±10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=7.5A, VGS=4.5V ID=7.5A, VGS=2.5V ID=3.7A, VGS=1.8V ID=1.5A, VGS=1.5V ID=7.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.7A, VDD 10V VGS=4.5V RL=2.7 RG=10 ID=7.5A, RL=1.3 VDD 10V, RG=10 VGS=4.5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=7.5A, VGS=0V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.04 - Rev.A RQ1C075UN  Electrical characteristic curves 8 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] Ta=25°C Pulsed 8 DRAIN CURRENT : ID[A] Ta=25°C Pulsed 6 VGS= 4.5V VGS= 2.5V VGS= 1.8V VGS= 1.5V VGS= 1.2V 2 100 10 1 0.1 0.01 0.001 0 2 4 6 8 10 0 0.5 1 Data Sheet VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 6 4 VGS= 1.2V VGS= 4.5V VGS= 2.5V VGS= 1.8V VGS= 1.5V 4 2 0 0 0.2 0.4 0.6 0.8 1 0 1.5 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 1000 VGS= 4.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 VGS= 2.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V 1 0.1 1 10 100 10 10 1 0.1 1 10 100 1 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 1000 VGS= 1.8V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= 1.5V Pulsed 100 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VDS= 10V Pulsed 10 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 10 10 1 1 0.1 1 10 100 1 0.1 1 10 100 0.1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.04 - Rev.A RQ1C075UN Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 SOURCE CURRENT : Is [A] VGS=0V Pulsed 10 50 40 30 20 10 0 0 5 10 SWITCHING TIME : t [ns] ID= 7.5A ID= 3.7A Ta=25°C Pulsed 10000 Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed 1000 tf td(off) 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0 0.5 1 1.5 100 0.1 10 tr 1 0.01 0.1 1 10 100 td(on) 0.01 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : ID[A] Fig.12 Switching Characteristics GATE-SOURCE VOLTAGE : VGS [V] 5 CAPACITANCE : C [pF] 4 3 2 1 0 0 5 10 Ta=25°C VDD=10V ID= 7.5A RG=10Ω Pulsed 15 20 10000 Ta=25°C f=1MHz VGS=0V Ciss 1000 Crss Coss 100 0.01 0.1 1 10 100 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.04 - Rev.A RQ1C075UN  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms VG VGS ID RL VDS Qg VGS Qgs Qgd IG(Const.) RG D.U.T. VDD Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.04 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. R1010A