RQ1E075XN

Data Sheet 4V Drive Nch MOSFET RQ1E075XN  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8). (1) (2) (3) (4) Abbreviated symbol : XR  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RQ1E075XN Taping TCR 3000 ○  Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Limits 30 20 7.5 *1 Unit V V A A A A W C C (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain ∗2 ∗1 (1) (2) (3) (4) VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP PD Tch Tstg ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 *2 30 1.25 30 1.5 150 55 to 150  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 83.3 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A RQ1E075XN  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 4.5 Typ. 12 17 19 440 170 85 7 25 35 7 6.8 1.6 2.6 Max. 10 1 2.5 17 24 27 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=7.5A, VGS=10V m  ID=7.5A, VGS=4.5V ID=7.5A, VGS=4.0V ID=7.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.75A, VDD 15V VGS=10V RL=4.0 RG=10 ID=7.5A, VDD 15 VGS=5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=7.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A RQ1E075XN Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 7 6 DRAIN CURRENT : ID[A] 5 4 3 2 1 VGS= 10V VGS= 4.5V VGS= 4.0V Ta=25°C Pulsed DRAIN CURRENT : ID[A] 7 6 5 4 3 2 1 VGS= 2.8V VGS= 2.5V VGS= 10V VGS= 4.5V VGS= 4.0V Ta=25°C Pulsed VGS= 3.0V VGS= 2.8V VGS= 2.5V VGS= 2.0V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] 0 0 2 4 6 VGS= 2.0V 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.3 Typical Transfer Characteristics 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= 10V Pulsed 10 DRAIN CURRENT : ID[A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed 1 10 . 0.1 VGS= 4.0V VGS= 4.5V VGS= 10V 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] 1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 10V Pulsed 100 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 4.5V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] 1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.04 - Rev.A RQ1E075XN 　 Fig.8 Forward Transfer Admittance vs. Drain Current 100 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Data Sheet Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 100 VGS= 4.0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= 10V Pulsed 10 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 100 VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 50 Ta=25°C Pulsed 40 ID= 7.5A 30 ID= 3.75A 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1.5 20 0.1 10 0.01 0 0.5 1 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Switching Characteristics 1000 td(off) tf SWITCHING TIME : t [ns] Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS [V] 8 100 6 td(on) 10 4 Ta=25°C VDD= 15V ID= 7.5A RG=10Ω Pulsed 0 2 4 6 8 10 12 14 16 2 tr 1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] 0 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.04 - Rev.A RQ1E075XN 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Aera 1000 10000 Ta=25°C f=1MHz VGS=0V CAPACITANCE : C [pF] Ciss DRAIN CURRENT : ID (A) Operation in this area is limited by RDS(ON) (VGS=10V) 100 1000 10 PW =100us 1 PW =1ms PW = 10ms 100 Crss Coss 0.1 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 DC operation 0.01 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=83.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A RQ1E075XN  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A