RSX071VA-30_11

Data Sheet Schottky barrier Diode RSX071VA-30  Applications General rectification.  Dimensions (Unit : mm) 0.17±0.1 　　 0.05 1.3±0.05  Land size figure (Unit : mm) 1.1 1.9±0.1 2.5±0.2  Features 1) Small mold type. (TUMD2) 2) Low VF 3) High reliability. TUMD2  Construction Silicon epitaxial planar 0.8±0.05  Structure ROHM : TUMD2 　　　 0.1 dot (year week factory) + day 0.6±0.2  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 1.75±0.1 φ1.55±0.1 　　　　　 0 0.25±0.05 3.5±0.05 8.0±0.2 1.43±0.05 4.0±0.1 φ1.0±0.2 　　　　　0 2.75 2.8±0.05 0.9±0.08  Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz 1cyc) ・ Junction temperature Tj Storage temperature Tstg Limits 30 30 700 5 150 40 to 150 Unit V V mA A °C °C  Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current VF IR Min. - Typ. 0.39 40 Max. 0.42 200 Unit V μA IF=700mA VR=30V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.C 0.8 0.5 2.0 RSX071VA-30 Data Sheet 1000 Ta=150℃ 1000000 Ta=150℃ 1000 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 100000 10000 1000 100 10 1 0.1 Ta=25℃ Ta=-25℃ Ta=125℃ Ta=75℃ Ta=125℃ 100 Ta=75℃ 10 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 100 Ta=-25℃ 10 1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 1 0 5 10 15 20 25 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 410 300 200 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 400 390 380 370 AVE:383.9mV 360 VF DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=0.7A n=30pcs 250 200 150 100 Ta=25℃ VR=30V n=30pcs 190 180 170 160 150 140 130 120 110 AVE:159.7pF 100 Ta=25℃ f=1MHz VR=0V n=10pcs AVE:36.59uA 50 0 IR DISPERSION MAP Ct DISPERSION MAP 30 30 25 20 15 10 5 0 trr DISPERSION MAP 30 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 Ifsm 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 0 1 Ifsm 8.3ms 8.3ms 1cyc AVE:15.6A 5 0 AVE:10.4ns 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 30 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Mounted on epoxy board IM=10mA IF=0.2A 0.5 0.4 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 1 Ifsm 1ms time Rth(j-a) 300us FORWARD POWER DISSIPATION:Pf(W) t 0.3 D=1/2 0.2 0.1 0 Sin(θ＝180) DC 100 Rth(j-c) 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.2 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.C RSX071VA-30 Data Sheet 3 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC 0A 0V Io t T VR D=t/T VR=15V Tj=150℃ 1.5 DC 0A 0V Io t T VR D=t/T VR=15V Tj=150℃ 2 Sin(θ＝180) DC D=1/2 1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) D=1/2 1 D=1/2 1 0.5 Sin(θ＝180) 0.5 Sin(θ＝180) 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A