RSX101M-30_11

Data Sheet Schottky Barrier Diode RSX101M-30  Applications General rectification  Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05  Land size figure (Unit : mm) 1.2 0.85 2.6±0.1 3)High reliability 3.5±0.2  Features 1)Small power mold type. (PMDU) 2)Low VF, Low IR ① PMDU  Construction Silicon epitaxial 0.9±0.1  Structure 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1  Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz 1cyc) ・ Junction temperature Tj Storage temperature Tstg (*1)Mounting on epoxi board. 180°Half sine wave Limits 30 30 1 45 150 40 to 150 Unit V V A A °C °C  Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current Capacitance between terminals ESD breakdown voltage VF IR Ct ESD Min. - Typ. 0.35 90 60.0 12.0 Max. 0.39 200 - Unit V μA pF kV Conditions IF=1A VR=30V VR=10V , f=1MHz C=200pF ,R=0Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.C 3.05 1.5MAX RSX101M-30 Data Sheet 1 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.01 1000000 1000 Ta=150℃ Ta=125℃ f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 100000 10000 Ta=150℃ 0.1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 1000 Ta=25℃ 100 10 1 0.1 0 5 10 15 20 25 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=-25℃ 100 10 0.001 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 500 1 30 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 380 1000 350 Ta=25℃ VR=30V n=30pcs 340 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 370 360 350 340 AVE:349.9mV 330 Ta=25℃ IF=1A n=30pcs 900 800 700 600 500 400 300 200 100 0 330 320 310 300 290 280 270 260 250 AVE:300.1pF AVE:103.1uA VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 100 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 Ifsm 8.3ms 1cyc 25 20 15 10 5 0 AVE:8.30ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 90 80 70 60 50 40 30 20 10 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms 1cyc 100 50 AVE:66.0A 0 IFSM DISPERSION MAP trr DISPERSION MAP 100 1000 Mounted on epoxy board IM=10mA IF=0.5A 1 Rth(j-a) PEAK SURGE FORWARD CURRENT:IFSM(A) 90 80 70 60 50 40 30 20 10 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 1ms time 0.8 300us FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) 10 0.6 0.4 0.2 0 Sin(θ＝180) D=1/2 DC 1 0.1 0.001 0.01 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.C RSX101M-30 Data Sheet 2 3 3 0A 0V DC D=1/2 Io t T VR D=t/T VR=15V Tj=150℃ 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 Sin(θ＝180) DC T D=1/2 0A 0V Io t VR D=t/T VR=15V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 1.5 2 1.5 1 0.5 0 1 D=1/2 DC 0.5 Sin(θ＝180) 0 0 Sin(θ＝180) 10 20 REVERSE VOLTAGE:VR(V) VR-PR C HARACTERISTICS 30 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:10.8kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2011.05 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A