RTQ030P02TR

RTQ030P02 Transistor DC-DC Converter (−20V, −3.0A) RTQ030P02 Features 1) Low On-resistance.(110mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) External dimensions (Units : mm) TSMT6 2.8 1.6 (3) (2) (1) (4) (5) (6) 0.16 0.4 Each lead has same dimensions Abbreviatedsymbol : TS Applications DC-DC converter Structure Silicon P-channel MOSFET Equivalent circuit (6) (5) (4) Packaging specifications Package Type Code Basic ordering unit (pieces) RTQ030P02 (1) (2) ∗2 Taping TR 3000 ∗1 (1)DRAIN (2)DRAIN (3)GATE (4)SOURCE (5)DRAIN (6)DRAIN 0.85 (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE 2.9 1/4 RTQ030P02 Transistor Absolute maximum ratings (Ta=25°C) Parameter Drain−source voltage Gate−source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature < < ∗1 Pw =10µs, Duty cycle =1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg Limits −20 ±12 ±3 ±12 −1 −4 1.25 150 −55~+150 Unit V V A A A A °C °C ∗1 ∗1 W ∗2 Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Symbol IGSS Min. − −20 − −0.7 − Typ. − − − − 60 65 110 − 800 150 100 15 27 50 20 9.0 1.6 4.6 Max. ±10 − −1 −2.0 80 90 150 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC ID=−1.5A VDD −15V VGS=−4.5V RL=10Ω RGS=10Ω VDD −15V VGS=−4.5V ID=−3A Conditions VGS=±12V, VDS=0V ID=−1mA, VGS=0V , VDS=−20V, VGS=0V VDS=−10V, ID=−1mA ID=−3A, VGS=−4.5V ID=−3A, VGS=−4V ID=−1.5A, VGS=−2.5V VDS=−10V, ID=−1.5A VDS=−10V,VGS=0V f=1MHz Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage IDSS VGS(th) ∗ Static drain-source on-state resistance Foward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗PULSED RDS(on) − − Yfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ∗ 2.0 − − − ∗ ∗ ∗ ∗ − − − − − − − Body diode characteristics (source-drain characteristics) Forward voltage VSD − − −1.2 V IS=−1A, VGS=0V 2/4 RTQ030P02 Transistor Electrical characteristic curves 10 Drain Current : −ID (A) 1 Ta=125 C 75 C 25 C −25 C Static Drain−Source On−State Resistance RDS(on)[mΩ] VDS=−10V pulsed 1000 Ta=25 C pulsed Static Drain−Source On−State Resistance RDS(on)[mΩ] 1000 VGS=−4.5V pulsed VGS=−4V −4.5V −10V Ta=125 75 25 −25 C C C C 0.1 100 100 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 0.1 1 10 10 0.1 1 10 Gate−Source Voltage : −VGS[V] Fig.1 Typical Transfer Characteristics Fig.2 Static Drain−Source On−State Resistance vs.Drain Current Drain Current : −ID[A] Drain Current : −ID[A] Fig.3 Static Drain−Source On−State Resistance vs.Drain Current 1000 Static Drain−Source On−State Resistance RDS(on)[mΩ] Static Drain−Source On−State Resistance RDS(on)[mΩ] VGS=−4V pulsed 1000 VGS=−2.5V pulsed 10 Reverse Drain Current : −IDR[A] VGS=0V pulsed Ta=125 C 75 C 25 C −25 C Ta=125 75 25 −25 C C C C 1 100 100 Ta=125 C 75 C 25 C −25 C 0.1 10 0.1 1 10 10 0.1 1 10 0.01 0 0.5 1.0 1.5 2.0 Drain Current : −ID[A] Drain Current : −ID[A] Source−Drain Voltage : −VSD[V] Fig.4 Static Drain−Source On−State Resistance vs.Drain−Current Fig.5 Static Drain−Source On−State Resistance vs.Drain−Current Fig.6 Reverse Drain Current vs. Source-Drain Voltage 10000 Gate-Source Voltage: -VGS [V] Ta=25 C f=1MHz VGS=0V 1000 Capacitance : C [pF] Switching Time : t [ns] Ta=25 C VDD=−15V VGS=−4.5V RG=10Ω pulsed tf td(off) td(on) 8 7 6 5 4 3 2 1 Ta=25 C VDD=−15V ID=−3.0V RG=10Ω pulsed 1000 Ciss 100 100 Coss Crss 10 tr 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 0 0 2 4 6 8 10 12 Drain−Source Voltage : −VDS[V] Drain Current : −ID[A] Fig.7 Typical Capactitance vs.Drain−Source Voltage Total Gate Charge : Qg[nC] Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 RTQ030P02 Transistor Measurement circuits VGS 10% 50% Pulse Width 50% 90% 10% 10% VGS ID D.U.T. RL VDS VDS 90% 90% RG VDD td(on) ton tr td(off) tf toff Fig.10 Switching Time Measurement Circuit Fig.11 Switching Waveforms VG Qg VGS VGS IG(Const) ID VDS Qgs RG D.U.T. RL Qgd VDD Charge Fig.12 Gate Charge Measurement Circuit Fig.13 Gate Charge Waveforms 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0