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RYU002N05T306

RYU002N05T306

  • 厂商:

    ROHM(罗姆)

  • 封装:

    SOT-323

  • 描述:

    MOS管 N-Channe VDS=50V VGS=±8V ID=200mA Pd=200mW SOT323

  • 数据手册
  • 价格&库存
RYU002N05T306 数据手册
Data Sheet 0.9V Drive Nch MOSFET RYU002N05  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) Features 1) High speed switing. 2) Small package(UMT3). 3)Ultra low voltage drive(0.9V drive). (2) (1) Abbreviated symbol : QJ  Application Switching  Packaging specifications  Inner circuit Package Type Code Basic ordering unit (pieces) RYU002N05 (3) Taping T306 3000   Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Source current (Body Diode) Limits Unit VDSS 50 V VGSS 8 V Continuous ID 200 mA Pulsed Continuous IDP IS *1 800 150 mA mA Pulsed ISP *1 800 mA PD *2 200 mW Tch Tstg 150 55 to 150 C C Symbol Limits Unit Rth (ch-a)* 625 C / W Gate-source voltage Drain current (2) Symbol Power dissipation Channel temperature Range of storage temperature (1) (1) SOURCE (2) GATE (3) DRAIN *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a recommended land. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 1/5 2011.04 - Rev.A Data Sheet   RYU002N05  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V (BR)DSS Min. Typ. Max. Unit - - 10 A VGS=8V, VDS=0V 50 - - V ID=1mA, VGS=0V Conditions IDSS - - 1 A VDS=50V, VGS=0V VGS (th) 0.3 - 0.8 V VDS=10V, ID=1mA - 1.6 2.2 - 1.7 2.4 - 2.0 2.8 - 2.2 3.3 ID=100mA, VGS=1.2V - 3.0 9.0 ID=10mA, VGS=0.9V l Yfs l* 0.2 - - Input capacitance Ciss - 26 - pF VDS=10V Output capacitance Coss - 6 - pF VGS=0V Reverse transfer capacitance Crss - 3 - pF f=1MHz Turn-on delay time td(on) * - 5 - ns ID=100mA, VDD 25V tr * - 8 - ns VGS=4.5V td(off) * tf * - 17 43 - ns ns RL=250 RG=10 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time RDS (on)* ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V  S ID=200mA, VGS=1.5V ID=200mA, VDS=10V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit V Conditions Is=200mA, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 2/5 2011.04 - Rev.A Data Sheet   RYU002N05  Electrical characteristics curves 0.2 0.1 VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V VGS= 0.9V Ta=25C Pulsed VGS= 0.8V 0.05 1 VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V 0.15 VGS= 0.9V 0.1 0.2 0.4 0.6 VDS= 10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= 25C 0.1 0.01 VGS= 0.7V 0.001 0 0 0.8 1 0 2 4 6 8 0 10 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : VGS[V] Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ) Fig.3 Typical Transfer Characteristics Ta= 25C Pulsed VGS= 0.9V VGS= 1.2V VGS= 1.5V VGS= 2.5V VGS= 4.5V 100 0.001 0.01 0.1 1 VGS= 4.5V Pulsed 1000 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 100 0.001 DRAIN-CURRENT : ID[A] VGS= 1.5V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= 25C 100 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. VGS= 2.5V Pulsed 1000 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 100 1 0.001 10000 VGS= 1.2V Pulsed 1000 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 3/5 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 10000 0.001 0.1 10000 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 1000 0.01 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 1000 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] Ta=25C Pulsed VGS= 0.8V 0.05 VGS= 0.7V 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] DRAIN CURRENT : ID[A] 0.15 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 0.2 10000 VGS= 0.9V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= 25C 1000 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅵ) 2011.04 - Rev.A 1 Ta=25C Ta=25C Ta=75C Ta=125C 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 1 VDS= 10V Pulsed SOURCE CURRENT : Is [A] VGS=0V Pulsed 0.1 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 0.01 0.01 0.1 1 1 Fig.10 Forward Transfer Admittance vs. Drain Current Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS [V] tf Ta=25C VDD=25V VGS=4.5V RG=10 10 td(on) tr 1 0.1 1 5000 Ta=25C Pulsed 4000 ID= 0.01A 3000 ID= 0.20A 2000 1000 0 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] 100 0 1 2 3 4 5 6 7 8 GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 Ta=25C f=1MHz VGS=0V 4 3 2 Ta=25C VDD=25V ID= 0.2A RG=10 Pulsed 1 0 0 0.5 1 100 Ciss 10 Crss Coss 1 1.5 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Switching Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage Fig.15 Typical Capacitance vs. Drain-Source Voltage www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 0.5 DRAIN-CURRENT : ID[A] td(off) 0.01 0 CAPACITANCE : C [pF] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 1000 SWITCHING TIME : t [ns] Data Sheet   RYU002N05 4/5 2011.04 - Rev.A Data Sheet   RYU002N05  Measurement circuits Pulse width VGS ID VDS RL 50% 10% D.U.T. RG 90% 50% 10% VGS VDS VDD 90% td(on) tr ton Fig.1-1 Switching Time Measurement Circuit 10% 90% td(off) tf toff Fig.1-2 Switching Waveforms  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 5/5 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. R1120A
RYU002N05T306 价格&库存

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RYU002N05T306
    •  国内价格 香港价格
    • 1+1.474261+0.17836
    • 10+1.2069510+0.14602
    • 50+0.9477450+0.11466
    • 100+0.89914100+0.10878
    • 500+0.57512500+0.06958
    • 1000+0.558921000+0.06762
    • 2000+0.526522000+0.06370
    • 4000+0.510324000+0.06174

    库存:2438

    RYU002N05T306
      •  国内价格 香港价格
      • 1+1.474261+0.17836
      • 10+1.2069510+0.14602
      • 50+0.9477450+0.11466
      • 100+0.89914100+0.10878
      • 500+0.57512500+0.06958
      • 1000+0.558921000+0.06762
      • 2000+0.526522000+0.06370
      • 4000+0.510324000+0.06174

      库存:3000

      RYU002N05T306
      •  国内价格
      • 1+1.11800
      • 10+1.03200
      • 30+1.01480

      库存:0