SH8M70TB1

SH8M70 10V Drive Nch+Pch MOSFET SH8M70 Structure Silicon N-channel / P-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Package (8) Taping (7) (6) (5) (8) (7) (6) (5) TB Code Type Inner circuit Basic ordering unit (pieces) 2500 SH8M70 ∗2 ∗2 (1) (2) (3) (4) ∗1 (1) ∗1 (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Absolute maximum ratings (Ta=25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits N-ch P-ch 250 −250 30 −20 ±2.5 ±3.0 ±10 ±12 −1.0 1.0 −10 12 2.0(TOTAL) 1.4(ELEMENT) 150 −55 to +150 Unit V V A A A A W °C °C ∗1 Pw≤10μs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/7 2010.06 - Rev.B SH8M70 Data Sheet N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS 250 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) 2.0 ∗ Static drain-source on-state − RDS (on) resistance ∗ Forward transfer admittance 0.75 Yfs Ciss Input capacitance − Coss − Output capacitance Crss − Reverse transfer capacitance td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time Qg ∗ − Total gate charge Qgs ∗ − Gate-source charge Qgd ∗ − Gate-drain charge Typ. Max. − − − − ±10 − 25 4.0 Unit μA V μA V VGS=±25V, VDS=0V ID=1mA, VGS=0V VDS=250V, VGS=0V VDS=10V, ID=1mA Conditions 1.25 1.63 Ω ID=1.5A, VGS=10V − 180 70 20 10 20 20 25 5.2 2.1 1.2 − − − − − − − − − − − S pF pF pF ns ns ns ns nC nC nC ID=1.5A, VDS=10V VDS=25V VGS=0V f=1MHz ID=1.5A, VDD 125V VGS=10V RL=83Ω RG =10Ω VDD 125V VGS=10V ID=3A RL=42Ω RG =10Ω ∗Pulsed Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS=3A, VGS=0V ∗Pulsed www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 2/7 2010.06 - Rev.B SH8M70 Data Sheet P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS −250 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) −2.0 Static drain-source on-state ∗ RDS (on) − resistance ∗ Forward transfer admittance Yfs 1.0 Ciss Input capacitance − Coss Output capacitance − Crss Reverse transfer capacitance − td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − tf ∗ Fall time − Qg ∗ Total gate charge − Qgs ∗ Gate-source charge − Qgd ∗ Gate-drain charge − Typ. Max. − − − − ±10 − −25 −4.0 Unit μA V μA V VGS=±15V, VDS=0V ID= −1mA, VGS=0V VDS= −250V, VGS=0V VDS= −10V, ID= −1mA Conditions 2.2 2.8 Ω ID= −1.25A, VGS= −10V − 250 40 10 9 15 30 20 8 2.5 2.8 − − − − − − − − − − − S pF pF pF ns ns ns ns nC nC nC ID= −1.25A, VDS= −10V VDS= −25V VGS=0V f=1MHz ID= −1.25A, VDD −125V VGS= −10V RL=100Ω RG =10Ω VDD −125V, ID= −2.5A VGS= −10V RL=50Ω, RG =10Ω ∗Pulsed Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. −1.5 Unit V Conditions IS=−2.5A, VGS=0V ∗Pulsed www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 3/7 2010.06 - Rev.B SH8M70 Data Sheet N-ch Electrical characteristic curves 10000 100 Coss 10 f=1MHz VGS=0V Ta=25°C 1 Pulsed 0.01 0.1 1000 1000 tf td(off) 100 td(on) 10 tr Crss 100 1 0.01 1000 0.1 10 Drain Current : ID(A) Gate Source Voltage : VGS(V) 10 5 2 3 4 Ta=25°C VDD=125V ID=3A Pulsed 5 6 7 0.01 0.1 Ta=-25°C 25°C 75°C 125°C 0 0.2 0.4 0.6 0.8 1 1.2 Source-Drain Voltage : VSD(V) Fig.7 Source Current vs. Source-Drain Voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ Fig.3 Reverse Recovery Time vs. Reverse Drain Current Ta=-25°C 25°C 75°C 125°C 0 2 4 6 8 10 Ta=25°C Pulsed 9 8 7 6 5 4 3 1.5A 2 Fig.5 Typical Transfer Characteristics 10 0 0 1 Ta=125°C 75°C 25°C -25°C 1 10 Drain Current : ID(A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current 4/7 5 10 15 20 Gate-Source Voltage : VGS(V) Fig.6 Static Drain-Source On-State Resistance vs.Gate-Source Voltage VGS=10V Pulsed 0.1 0.1 ID=3A 1 Gate-Source Voltage : VGS (V) Static Drain-Source On-State Resistance : Source Current : IS(A) 1 1 Ta=25°C di/dt=100A/μs VGS=0V Pulsed 10 Reverse Drain Current : IDR(A) VDS=10V Pulsed 0.1 Fig.4 Dynamic Input Characteristics VGS=0V Pulsed 1 0.1 10 1 Total Gate Charge : Qg(nC) 10 10 Fig.2 Switching Characteristics 15 1 100 Drain Current : ID(A) Fig.1 Typical Capacitance vs. Drain-Source Voltage 0 1 Static Drain-Source On-State Resistance 10 Static Drain-Source On-State Resistance 1 Drain-Source Voltage : VDS(V) 0 Ta=25°C VDD=125V VGS=10V RG=10Ω Pulsed Reverse Recovery Time : trr (ns) Ciss Switching Time : t(ns) Typical Capacitance : C (pF) 1000 3 VGS=10V Pulsed 2.5 ID=3.0A 2 1.5A 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 Temperature : Tch (°C) Fig.9 Static Drain-Source On-State Resistance vs. Channel Temperature 2010.06 - Rev.B SH8M70 5 1 Ta=-25°C 25°C 75°C 75°C 0.1 0.01 0.01 0.1 1 2 VDS=10V ID=1mA VGS=10V 9V 8V 1.6 7V 1.8 4 Drain Current : ID (A) VDS=10V Pulsed Gate Threshold Voltage : VGS(th)(V) Forward Transfer Admittance : |Yfs| (S) 10 Data Sheet 3 2 6V 1.4 1.2 5V 1 0.8 0.6 0.4 1 4V 0.2 0 -50 -25 10 Drain Current : ID(A) 0 25 50 3V 0 75 100 125 150 0 2 6 8 10 Drain-Sourse Voltage : VDS (V) Channel Temperature : Tch (°C) Fig.10 Forward Transfer Admittance vs. Drain Current 4 Fig.12 Typical Output Characteristics Fig.11 Gate Threshold Voltage vs. Channel Temperature P-ch Electrical characteristic curves Ta=25°C VDD= −125V VGS= −10V RG=10Ω Pulsed Switching Time : t(ns) 100 Coss 10 Crss f=1MHz VGS=0V Ta=25°C Pulsed 1 0.01 0.1 1 10 100 1000 tf 100 td(off) td(on) 10 tr 1 0.01 1000 0.1 Drain-Source Voltage : -VDS(V) Static Drain - Source On - State Resistance Drain Current : -ID (A) 1 0.01 Ta=-25°C 25°C 75°C 125°C 0 2 4 6 Ta=25°C VDD=−125V ID=−2.5A Pulsed 0 1 2 3 4 5 6 7 8 9 10 8 Gate-Source Voltage : −VGS(V) Fig.4 Typical Transfer Characteristics www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ Total Gate Charge : Qg(nC) Fig.3 Dynamic Input Characteristics 10 10 VDS=-10V Pulsed 0.1 5 0 10 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 1 10 Drain Current : -ID (A) 9 8 Source Current : -IS(A) Typical Capacitance : C (pF) Ciss 15 Gate Source Voltage : −VGS(V) 10000 1000 7 6 5 4 3 ID=-2.5A 2 1 Ta=-25°C 25°C 75°C 125°C -1.25A 1 Ta=25°C Pulsed 0 0 5 0.1 10 15 20 Gate-Source Voltage : -VGS(V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 5/7 VGS=0V Pulsed 0 0.2 0.4 0.6 0.8 1 1.2 Source-Drain Voltage : -VSD(V) Fig.6 Source Current vs. Source-Drain Voltage 2010.06 - Rev.B Data Sheet Ta=125°C 75°C 25°C -25°C VGS=10V Pulsed 0.1 0.1 1 10 1 Ta=-25°C 25°C 75°C 125°C 0.1 0.01 0.01 0.1 1000 5 Static Drain-Source On-State Resistance : RDS(on)(Ω) Reverse Recovery Time : trr (ns) 2 1 10 100 10 10 Reverse Drain Current : -IDR (A) Fig.10 Reverse Recovery Time vs. Reverse Drain Current www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ VDS=10V ID=1mA 0 25 -7V 1.8 4 ID=2.5A 1.25A 2 1 -6V VGS=-10V -9V -8V 1.6 3 75 100 125 150 Fig.9 Gate Threshold Voltage vs. Channel Temperature (X-1) 2 VGS=10V Pulsed 50 Channel Temperature : Tch: (°C) Fig.8 Forward Transfer Admittance vs. Drain Current Fig.7 Static Drain-Source On-State Resistance vs. Drain Current 1 3 Drain Current : -ID(A) Drain Current : -ID(A) 1 0.1 1 4 0 -50 -25 Drain Current : -ID(A) 1 5 VDS=10V Pulsed Gate Threshold Voltage : -VGS(th)(V) 10 10 Forward Transfer Admittance : |Yfs| (S) Static Drain-Source On-State Resistance : SH8M70 1.4 TC=25°C Single Pulsed 1.2 1 -5V 0.8 0.6 0.4 0 -50 -25 0.2 0 25 50 75 100 125 150 Temperature : Tch (°C) Fig.11 Static Drain-Source On-State Resistance vs.Channel Temperature 6/7 0 -4V 0 2 4 6 8 10 Drain-Sourse Voltage : -VDS(V)(X-1) Fig.12 Typical Output Characteristics 2010.06 - Rev.B SH8M70 Data Sheet N-ch Measurement circuit VGS ID Pulse Width VDS RL D.U.T. 90% 50% 10% VGS VDS 50% 10% RG 10% VDD 90% td(on) 90% td(off) tr tr ton Fig.13 Switching Time Measurement Circuit VGS ID toff Fig.14 Switching Waveforms VG VDS RL Qg IG (Const.) D.U.T. VGS RG VDD Qgs Qgd Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveform P-ch  Measurement circuit VGS ID Pulse Width VDS VGS 10% 50% RL 50% 90% D.U.T. RG 10% VDD VDS 10% 90% td(on) 90% td(off) tr ton tr toff Fig.17 Switching Time Measurement Circuit Fig.18 Switching Waveforms VGS ID VDS VG RL Qg IG (Const.) D.U.T. VGS RG VDD Qgs Qgd Charge Fig.19 Gate Charge Measurement Circuit Fig.20 Gate Charge Waveform www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 7/7 2010.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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