UM6K33N

1.2V Drive Nch + Nch MOSFET UM6K33N Structure Silicon N-channel MOSFET Features 1) High speed switing. 2) Small package(UMT6). 3) Ultra low voltage drive(1.2V drive). (1) Dimensions (Unit : mm) UMT6 (SC-88) (6) (5) (4) (2) (3) Application Switching Abbreviated symbol : K33 Packaging specifications Package Type Code Basic ordering unit (pieces) UM6K33N Inner circuit Taping TN 3000  (6) (5) ∗1 ∗2 ∗2 (4)          ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 SOURCE (2) Tr1 GATE (3) Tr2 DRAIN (4) Tr2 SOURCE (5) Tr2 GATE (6) Tr1 DRAIN Absolute maximum ratings (Ta = 25C) Symbol Parameter Limits 50 8 Unit V V mA mA mA mA Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 *1 *2 200 800 125 800 150 mW / TOTAL 120 mW / ELEMENT 150 C 55 to +150 C   Thermal resistance Parameter  Symbol Rth (ch-a) * Limits 833 1042 Unit °C / W /TOTAL °C / W /ELEMENT Channel to ambient * Each terminal mounted on a recommended land.  www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.01 - Rev.A UM6K33N Electrical characteristics (Ta = 25C) Data Sheet Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Symbol IGSS IDSS VGS (th) Min. 50 0.3 - Typ. 1.6 1.7 1.9 2.0 2.4 25 6 3 4 6 15 55 Max. 10 1 1.0 2.2 2.4 2.7 4.0 7.2 - Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=50V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V Drain-source breakdown voltage V (BR)DSS Static drain-source on-state resistance * RDS (on) -  ID=100mA, VGS=1.8V ID=40mA, VGS=1.5V ID=20mA, VGS=1.2V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * 0.4 - S pF pF pF ns ns ns ns ID=200mA, VDS=10V VDS=10V VGS=0V f=1MHz ID=100mA, VDD 30V VGS=4.5V RL=300 RG=10 Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=200mA, VGS=0V www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.01 - Rev.A UM6K33N Electrical characteristic curves 0.4 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V Data Sheet 0.4 DRAIN CURRENT : ID[A] VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V 1 Ta=25°C Pulsed VDS= 10V Pulsed 0.3 Ta=25°C Pulsed VGS= 1.2V 0.3 0.1 0.2 VGS= 1.0V 0.2 VGS=1.2V VGS=1.0V Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.01 0.1 VGS= 0.8V 0.1 VGS=0.8V 0 0 0 0.2 0.4 0.6 0.8 1 0.001 0 2 4 6 8 10 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( I ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( II ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ Ta= 25°C Pulsed STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ 100 100 VGS= 4.5V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 VGS= 2.5V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 VGS=1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 1 1 1 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( I ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( II ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( III ) STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ] 100 VGS= 1.8V Pulsed 100 100 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= 1.5V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= 1.2V Pulsed 10 1 1 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( IV ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( V ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( VI ) www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.01 - Rev.A UM6K33N FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Data Sheet STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(ON)[ 1 1 10 9 8 7 6 5 4 3 2 1 0 0 5 10 ID= 20mA ID=200mA Ta=25°C Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C SOURCE CURRENT : Is [A] VDS= 10V Pulsed VGS=0V Pulsed 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 0.001 0.01 0.1 1 0 0.5 1 1.5 DRAIN-CURRENT : ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 1000 SWITCHING TIME : t [ns] CAPACITANCE : C [pF] tf 100 td(off) Ta=25°C VDD=30V VGS=4.5V RG=10 Pulsed 100 Ta=25°C f=1MHz VGS=0V Ciss 10 Crss 10 tr 1 Coss td(on) 1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.13 Switching Characteristics 1 0.1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.01 - Rev.A UM6K33N Measurement circuits Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.01 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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