UMF32N

Power management (dual transistors) EMF32 / UMF32N DTA143T and 2SK3019 are housed independently in a EMT6 package. Application Power management circuit Dimensions (Unit : mm) 0.22 (4) (5) (6) (3) (2) (1) Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 1.2 1.6 0.13 ROHM : EMT6 Structure Silicon epitaxial planar transistor Each lead has same dimensions Abbreviated symbol : F32 (6) (3) (2) (1) 0.15 1.25 2.1 1pin mark 0.65 (1) Tr2 Tr1 0.1Min. ROHM : UMT6 (4) (5) (6) Each lead has same dimensions Abbreviated symbol : F32 Packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF32 EMT6 F32 T2R 8000 UMF32N UMT6 F32 TR 3000 www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 0.7 0.9 2.0 0.2 (5) 1.3 (2) Inner circuits (4) (3) 0.65 0.5 0.5 0.5 1.0 1.6 1/4 2010.09 - Rev.A EMF32 / UMF32N Absolute maximum ratings (Ta=25C) Tr1 Limits Parameter Symbol −50 VCBO Collector-base voltage −50 VCEO Collector-emitter voltage −5 VEBO Emitter-base voltage −100 IC Collector current 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg −55 to +150 Range of storage temperature Unit V V V mA mW °C °C Data Sheet ∗1 ∗1 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Tr2 Symbol Limits Parameter VDSS 30 Drain-source voltage VGSS ±20 Gate-source voltage ID 100 Continuous Drain current 200 IDP Pulsed IDR 100 Continuous Reverse drain current IDRP 200 Pulsed Total power dissipation PD 150(TOTAL) Tch 150 Channel temperature Tstg −55 to +150 Range of storage temperature Unit V V mA mA mA mA mW °C °C ∗1 ∗1 ∗2 ∗1 PW≤10ms Duty cycle≤50% ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Electrical characteristics (Ta=25C) Tr1 Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. −50 −50 −5 − − − 100 3.29 − Typ. − − − − − − 250 4.7 250 Max. − − − −0.5 −0.5 −0.3 600 6.11 − Unit V V V μA μA V − kΩ MHz IC= −50μA IC= −1mA IE= −50μA VCB= −50V VEB= −4V IC/IB= −5mA/ −0.25mA IC= −1mA, VCE= −5V − VCE= −10V, IE=5mA, f=100MHz Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Transition frequency of the device ∗ Tr2 Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf Min. − 30 − 0.8 − − 20 − − − − − − − Typ. − − − − 5 7 − 13 9 4 15 35 80 80 Max. ±1 − 1.0 1.5 8 13 − − − − − − − − Unit μA V μA V Ω Ω ms pF pF pF ns ns ns ns Conditions VGS=±20V, VDS=0V ID=10μA, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100μA ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA VDS=5V, VGS=0V, f=1MHz ID=10mA, VDD 5V, VGS=5V, RL=500Ω, RGS=10Ω www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 2/4 2010.09 - Rev.A EMF32 / UMF32N Electrical characteristic curves Tr1 1k 500 DC CURRENT GAIN : hFE Data Sheet COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=−5V −1 −500m −200m −100m −50m −20m −10m −5m −2m Ta=100°C 25°C −40°C lC/lB=20 200 100 50 20 10 5 2 1 −100μ −200μ −500μ −1m −2m −5m −10m −20m −50m −100m Ta=100°C 25°C −40°C −1m −100μ −200μ −500μ −1m −2m −5m −10m −20m −50m −100m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage vs. collector current Tr2 GATE THRESHOLD VOLTAGE : VGS(th) (V) 0.15 4V DRAIN CURRENT : ID (A) 200m 3V DRAIN CURRENT : ID (A) 3.5V Ta=25°C Pulsed 100m 50m 20m 10m 5m 2m 1m 0.5m VDS=3V Pulsed 2 VDS=3V ID=0.1mA Pulsed 1.5 0.1 2.5V 1 0.05 2V VGS=1.5V Ta=125°C 75°C 25°C −25°C 0.5 0.2m 4 5 0 0 1 2 3 0.1m 0 1 2 3 4 0 −50 −25 0 25 50 75 100 125 150 DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (°C) Fig.3 Typical output characteristics Fig.4 Typical transfer characteristics Fig.5 Gate threshold voltage vs. channel temperature 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 10 5 Ta=125°C 75°C 25°C −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 10 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS=4V Pulsed 50 Ta=125°C 75°C 25°C −25°C VGS=2.5V Pulsed 15 Ta=25°C Pulsed 10 2 1 0.5 0.001 0.002 2 1 0.5 0.001 0.002 5 ID=0.1A ID=0.05A 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0 5 10 15 20 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static drain-source on-state resistance vs. drain current ( Ι ) Fig.7 Static drain-source on-state resistance vs. drain current ( ΙΙ ) Fig.8 Static drain-source on-state resistance vs. gate-source voltage www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 3/4 2010.09 - Rev.A EMF32 / UMF32N REVERSE DRAIN CURRENT : IDR (A) 9 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Data Sheet VGS=4V Pulsed 0.5 VDS=3V Pulsed 200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m 8 7 6 5 4 3 2 1 0 −50 −25 0 25 50 75 ID=100mA VGS=0V Pulsed 0.2 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 0.1 0.05 0.02 0.01 0.005 0.002 ID=50mA Ta=−25°C 25°C 75°C 125°C Ta=125°C 75°C 25°C −25°C 100 125 150 0.001 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0.5 1 1.5 CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Static drain-source on-state resistance vs. channel temperature Fig.10 Forward transfer admittance vs. drain current Fig.11 Reverse drain current vs. source-drain voltage ( Ι ) REVERSE DRAIN CURRENT : IDR (A) 200m 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m VGS=4V Ta=25°C Pulsed 50 20 Ta=25°C f=1MHZ VGS=0V 1000 tf 500 SWITHING TIME : t (ns) td(off) CAPACITANCE : C (pF) 200 100 50 20 10 5 2 0.1 0.2 tr td(on) Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed 10 5 Ciss 0V Coss Crss 2 1 0.5 0.1 0 0.5 1 1.5 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 100 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.12 Reverse drain current vs. source-drain voltage ( ΙΙ ) Fig.13 Typical capacitance vs. drain-source voltage Fig.14 Switching characteristics www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 4/4 2010.09 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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