UMX2N

EMX2 / UMX2N / IMX2 Transistors General purpose (dual transistors) EMX2 / UMX2N / IMX2 Features 1) Two 2SC2412AK chips in a EMT or UMT or SMT package. External dimensions (Unit : mm) EMX2 Equivalent circuits EMX2 / UMX2N (3) (2) (1) 0.22 (4) (5) (6) (3) (2) (1) IMX2 0.13 (4) (5) (6) 1.2 1.6 Tr2 (4) (5) Tr1 (6) Tr2 (3) (2) Tr1 (1) ROHM : EMT6 Each lead has same dimensions Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation EMX2 / UMX2N IMX2 Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 60 50 7 150 150(TOTAL) 300(TOTAL) 150 −55 to +150 Unit V V V mA mW UMX2N (4) (3) 0.65 0.2 (5) (2) 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.5 (6) 1.25 2.1 0.5 0.5 1.0 1.6 0.7 0.9 ∗1 ∗2 0.15 Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. °C °C 0~0.1 0.1Min. ROHM : UMT6 EIAJ : SC-88 Package, marking, and packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMX2 EMT6 X2 T2R 8000 UMX2N UMT6 X2 TR 3000 IMX2 SMT6 X2 T108 3000 IMX2 (6) 0.3 (5) (4) 1.6 2.8 0.15 0.3Min. 0~0.1 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions (3) (2) (1) (1) Each lead has same dimensions Rev.A 2.0 1/3 EMX2 / UMX2N / IMX2 Transistors Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗Transition frequency of the device. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 60 50 7 − − − 120 − − Typ. − − − − − − − 180 2 Max. − − − 0.1 0.1 0.4 560 − 3.5 Unit V V V µA µA V − MHz pF IC=50µA IC=1mA IE=50µA VCB=60V VEB=7V Conditions IC/IB=50mA/5mA VCE=6V, IC=1mA VCE=12V, IE= −2mA, f=100MHz ∗ VCB=12V, IE=0mA, f=1MHz Electrical characteristics curves 50 100 VCE=6V Ta=25°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 20 10 5 COLLECTOR CURRENT : IC (mA) 80 0.50mA mA 0.45 A 0.40m 35mA 0. 0.30mA 0.25mA 0.20mA 10 Ta=25°C 30µA 27µA 24µA 21µA 8 Ta=100°C 25°C −55°C 60 6 18µA 15µA 12µA 9µA 6µA 3µA 2 1 0.5 0.2 0.1 0 40 0.15mA 0.10mA 4 20 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( Ι ) Fig.3 Grounded emitter output characteristics ( ΙΙ ) 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C 500 Ta=100°C VCE=5V 0.5 Ta=25°C DC CURRENT GAIN : hFE 200 VCE=5V 3V 1V DC CURRENT GAIN : hFE 200 25°C −55°C 0.2 IC/IB=50 20 10 100 100 0.1 0.05 50 50 0.02 20 10 0.2 20 10 0.2 0.5 1 2 5 10 20 50 100 200 0.5 1 2 5 1 0 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig. 6 Collector-emitter saturation voltage vs. collector current Rev.A 2/3 EMX2 / UMX2N / IMX2 Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=10 0.5 TRANSITION FREQUENCY : fT (MHz) IC/IB=50 Ta=100°C 25°C −55°C 500 Ta=25°C VCE=6V 0.2 Ta=100°C 25°C −55°C 0.2 0.1 0.05 0.1 0.05 200 0.02 100 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 0.01 0.2 0.5 1 2 5 10 20 50 100 200 50 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) Fig.9 Gain bandwidth product vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 20 10 Cib Ta=25°C f=1MHz IE=0A IC=0A 200 Ta=25°C f=32MHZ VCB=6V 100 5 50 2 Co 20 b 1 0.2 0.5 1 2 5 10 20 50 10 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.11 Base-collector time constant vs. emitter current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1