2SA562

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SA562 TRANSISTOR (PNP) 1. EMITTER FEATURES Excellent hFE inearlity 2. COLLECTOR 3. BASE     Z z   Equivalent Circuit $ 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH LIQRQHWKHQRUPDOGHYLFH Z=Rank of h FE ;;; &RGH 1         !"#$ %!&  6$ 72 %XON 1000pcs/Bag 6$7$  72 7DSH 2000pcs/Box Я unless otherwise noted) MAXIMUM RATINGS (T=25Я Symbol Parameter Value Unit  6 VCEO Collector-Base Voltage   Collector-Emitter Voltage  6 VEBO Emitter-Base Voltage  6 IC Collector Current -Continuous  M! PC Collector Power Dissipation  M7 TJ,Tstg Operation Junction and Storage Temperature Range -55~+150 Я VCBO www.jscj-elec.com 1 Rev. - 2.0 ' ''(' ) ') Ta =25 Я unless otherwise specified Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic=-100μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0~30 Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 M! T&* +  ,! 6 6  6 Collector cut-off current ICBO VCB=35V, IE=0 -0.1 P! Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 P! DC current gain hFE VCE=-1V, IC=-100mA Collector-emitter saturation voltage VCE(SAT) Ic=-100mA, IB=-10mA Base-emitter voltage VBE VCE=-1V, IC=-100mA Transition frequency fT VCE=-6V, IC=-20mA Collector output capacitance Cob VCE=-6V, IE=0,f=1MHz 70   6  6  -(Z pF  CLASSIFICATION OF hFE   R  O Y R  www.jscj-elec.com 2 120- Rev. - 2.0 Typical Characteristics 1000 COMMON EMITTER Ta=25ć -0.40mA -0.32mA -40 -0.24mA Ta=25ć 100 -0.16mA COMMON EMITTER VCE=-1V IB=-0.08mA -0.5 -1.0 VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=100ć hFE -0.48mA -300 10 -1.5 VCE -10 -100 COLLECTOR CURRENT VBEsat —— IC -500 (mA) =10 Ta=100ć Ta=25ć -1 -10 -100 COLLECTOR CURRENT IC IC -1000 Ta=25ć -800 Ta=100ć -600 -400 -200 -500 -1 -10 -100 COLLECTOR CURRENT (mA) —— VBE Cob/ Cib 100 COMMON EMITTER VCE=-1V (pF) CAPACITANCE Ta=25ć -10 -600 -800 BASE-EMMITER VOLTAGE fT -1000 VCB/ VEB VBE Ta=25ć Cob 10 1 -0.1 -1200 -1 -10 REVERSE VOLTAGE (mV) —— IC PC 625 fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) 1000 -500 (mA) Cib C IC Ta=100ć -400 —— IC f=1MHz IE=0 / IC=0 -100 -1 -200 IC —— IC -1200 =10 -500 -1 (V) -100 -10 (mA) DC CURRENT GAIN -0.56mA -80 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) -0.72mA COLLECTOR-EMITTER VOLTAGE COLLCETOR CURRENT IC -0.80mA -0.64mA -0 -0.0 TRANSITION FREQUENCY —— hFE Static Characteristic -120 100 COMMON EMITTER VCE= -6V —— V -20 (V) Ta 500 375 250 125 Ta=25ć 10 -10 COLLECTOR CURRENT www.jscj-elec.com 0 -100 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (ć ) Rev. - 2.0 /0-!!.#!. )&#A A1 b c D D1 E e e1 L ۷ h !.#!. !--. !.#!. ! !". ! + ! + 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 /0).$$&# NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 /07DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0