2SC3303

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC3303 TRANSISTOR (NPN) TO-252-2L FEATURES z Low Collector Saturation Voltage z High Speed Switching Time 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current 5 A PC Collector Power Dissipation 1 W Thermal Resistance From Junction To Ambient 125 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 7 V Collector cut-off current ICBO VCB=100V,IE=0 1 μA Emitter cut-off current IEBO VEB=7V,IC=0 1 μA hFE(1) VCE=1V, IC=1A 70 hFE(2) VCE=1V, IC=3A 40 DC current gain 240 Collector-emitter saturation voltage VCE(sat) IC=3A,IB=150mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=3A,IB=150mA 1.2 V Collector output capacitance Transition frequency Cob fT VCB=10V,IE=0, f=1MHz 80 pF VCE=4V,IC=1A, 20 MHz CLASSIFICATION OF hFE(1) RANK O Y RANGE 70-140 120-240 B,Apr,2014 Typical Characteristics Static Characteristic 2.2 COMMON EMITTER Ta=25℃ 14mA 1.6 12mA 1.4 10mA IC COLLECTOR CURRENT VCE= 1V hFE 1.8 1.2 8mA 1.0 6mA 0.8 o Ta=100 C o Ta=25 C 100 4mA 0.6 0.4 IB=2mA 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 COLLECTOR-EMITTER VOLTAGE 4.0 VCE 4.5 10 1E-3 5.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1200 1000 Ta=25℃ 800 600 Ta=100℃ 400 200 0.01 0.1 Cob / Cib 1000 IC 1 5 IC β=20 700 600 500 400 Ta=100℃ 300 200 Ta=25℃ f=1MHz IE=0 / IC=0 IC (A) (pF) COLLECTOR CURRENT 100 Cob 10 1 10 Pc 1500 —— V (A) VCE=1V o REVERSE VOLTAGE IC IC——VBE 5 Ta=25 C 1 0.1 5 1 COLLECTOR CURRENT VCB / VEB —— 0.1 (A) Cib C (A) 800 0 5 1 COLLECTOR CURRENT CAPACITANCE VCEsat —— IC 100 0 1E-3 COLLECTOR POWER DISSIPATION Pc (mW) 0.1 COLLECTOR CURRENT 900 β=20 1400 0.01 (V) VBEsat —— IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) hFE —— IC 1000 18mA 16mA DC CURRENT GAIN 2.0 (A) 20mA 2SC3303 20 (V) 1 o Ta=100 C Ta=25℃ 0.1 0.01 1E-3 200 400 600 800 1000 BASE-EMITTER VOLTAGE 1200 1400 VBE(mV) Ta 1200 900 600 300 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Apr,2014