2SD1616A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1616A TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURE Power dissipation 3. BSAE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Unit VCBO Collector-Base Voltage Parameter 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1 A PC Collector Power Dissipation 0.75 W Thermal Resistance From Junction To Ambient 167 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μA , IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC= 2mA , IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=6V, IC=0 0.1 μA hFE1 VCE=2 V, IC= 100mA 135 hFE2 VCE=2 V, 81 DC current gain IC= 1A 600 Collector-emitter saturation voltage * VCE(sat) IC= 1A, IB=50mA 0.3 V Base-emitter saturation voltage * VBE(sat) IC= 1A, IB=50mA 1.2 V 0.7 V VBE Base-emitter voltage * fT Transition frequency Output capacitance Cob Turn on time ton Storage time tS Fall time tF VCE= 2V, IC=50mA 0.6 VCE=2 V, IC= 100mA 100 MHz VCB=10 V,IE= 0, f=1MHz Vcc=10V, IC=100mA, IB1=-IB2=10mA 19 pF 0.07 μs 0.95 μs 0.07 μs *pulse test: PW≤350µS, δ≤2%. CLASSIFICATION OF hFE1 Rank Range www.cj-elec.com L K U 135-270 200-400 300-600 1 E,Dec,2015 Typical Characteristics Static Characteristic VCE= 2V o Ta=100 C hFE 0.4 1mA DC CURRENT GAIN COLLECTOR CURRENT hFE —— IC 1000 COMMON EMITTER Ta=25℃ IC (A) 0.5 0.9mA 0.3 0.8mA 0.7mA 0.6mA 0.2 0.5mA o Ta=25 C 100 0.4mA 0.1 0.3mA 0.2mA IB=0.1mA 0.0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCE 10 10 1 VBEsat —— IC 1000 VCEsat —— 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=20 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT (V) 800 Ta=25℃ 600 400 Ta=100℃ 100 IC 1000 (mA) IC β=20 150 Ta=100℃ 100 Ta=25℃ 50 200 0 0.1 0 1 10 100 COLLECTOR CURRENT fT —— 400 COLLECTOR CURRENT IC Cob / Cib 1000 —— 600 IC 800 1000 (mA) VCB / VEB f=1MHz IE=0 / IC=0 o Ta=25 C (pF) 200 C 150 CAPACITANCE TRANSITION FREQUENCY 200 100 (mA) fT (MHz) 250 IC 1000 100 100 Cib Cob 10 50 VCE=2V o Ta=25 C 0 20 5 40 60 COLLECTOR CURRENT 80 IC 1 0.1 100 IC——VBE 1000 1 10 REVERSE VOLTAGE (mA) Pc 1200 —— V 20 (V) Ta COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT IC (mA) VCE=2V 100 o Ta=25℃ Ta=100 C 10 1 1000 800 600 400 200 0.1 200 0 400 600 BASE-EMITTER VOLTAGE www.cj-elec.com 800 1000 0 25 50 75 AMBIENT TEMPERATURE VBE(mV) 2 100 Ta 125 150 (℃ ) E,Dec,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 E,Dec,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 E,Dec,2015