2SD2012

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2012 TO – 220F TRANSISTOR (NPN) 1. BASE FEATURES z Audio frequency power amplifier applications High DC current gain z z Low saturation voltage z High power dissipation 2. COLLECTOR 3. EMITTER 1 2 3 Equivalent Circuit  2SD2012 'HYLFHFRGH 6ROLGGRW *UHHQPROGLQQFRPSRXQGGHYLFH  LIQRQHWKHQRUPDOGHYLFH XXXX=Code 2SD2012 XXXX MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 3 A PC Collector power dissipation 2 W TJ,Tstg Operation Junction and Storage Temperature Range -55-150 ℃ www.jscj-elec.com 1 Rev. - 2.1 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V= IC=100μA , IE 0 (BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage = V(BR)EBO IE=100μA, IC 0 Collector cut-off current Emitter cut-off current IC=50mA, IB=01） MIN TYP MAX UNIT 60 V 60 V 7 V = VCB=60V, IE 0 ICBO = VEB=7V, IC 0 IEBO hFE1 VCE=5V, = IC 0.5A 100 hFE2 VCE= =5V, IC 2A 20 100 μA 100 μA 320 DC current gain IC=2A, IB 0.2A VCE(sat) Collector-emitter saturation voltage = Base-emitter voltage = VCE=5V, IC 0.5A VBE Transition frequency fT VCE=5V, IC= 0.5A collector capacitance Cob Co = = IE 0,f CB=10V, www.jscj-elec.com 2 1MHz 1 V 1 V 3 MHz 35 pF Rev. - 2.1 Typical Characteristics Static Characteristic 800 hFE 4mA 3.5mA 500 3mA 400 2.5mA 300 2mA 200 Ta=25℃ 100 1mA IB=0.5mA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 VCE Ta=25℃ β=10 10 100 1000 COLLECTOR CURRENT VBE 3000 100 VBEsat 2000 Ta=100℃ 1 10 COLLECTOR CURRENT IC —— VCE=5V 1 (V) 100 10 10 6 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 1 Ta=100℃ 1.5mA 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 4.5mA 600 IC —— COMMON EMITTER Ta=25℃ 5mA 700 0 hFE 1000 IC 1000 IC IC —— Ta=25℃ β=10 1 10 (mA) 100 1000 COLLECTOR CURRENT —— IC (mA) Ta=100℃ 100 3000 3000 1000 Cob/ Cib 1000 IC 3000 (mA) —— VCB/ VEB 1000 (pF) Ta=25℃ 10 1 0.2 0.4 0.5 0.7 0.6 fT —— 0.9 10 Ta=25℃ 1 0.1 1.0 1 (V) 10 REVERSE VOLTAGE IC PC 2500 fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) 100 VBE 0.8 Cob f=1MHz IE=0/IC=0 VCE=5V 0.3 BASE-EMMITER VOLTAGE TRANSITION FREQUENCY 100 C 100 CAPACITANCE COLLCETOR CURRENT IC (mA) Cib Ta=100℃ 10 —— V 20 (V) Ta 2000 1500 1000 500 VCE=5V 1 Ta=25℃ 20 100 COLLECTOR CURRENT www.jscj-elec.com 0 500 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (℃ ) Rev. - 2.1 TO-220F Package Outline Dimensions Symbol A A1 A2 A3 b b1 b2 c D E e F Ф h h1 h2 L L1 L2 www.jscj-elec.com Dimensions In Millimeters Min. Max. 4.300 4.700 1.300 REF. 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.500 1.750 0.500 0.750 9.960 10.360 14.800 15.200 2.540 TYP. 2.700 REF. 3.500 REF. 0.000 0.300 0.800 REF. 0.500 REF. 28.000 28.400 1.700 1.900 0.900 1.100 4 Dimensions In Inches Min. Max. 0.169 0.185 0.051 REF. 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.059 0.069 0.020 0.030 0.392 0.408 0.583 0.598 0.100 TYP. 0.106 REF. 0.138 REF. 0.000 0.012 0.031 REF. 0.020 REF. 1.102 1.118 0.067 0.075 0.035 0.043 Rev. - 2.1