2SD2153

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2153 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES  Low saturation voltage 2. COLLECTOR Excellent DC current gain characteristics  3. EMITTER MARKING: DN MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V Continuous Collector Current 2 A Pulsed Collector Current 3 A Collector Dissipation 0.5 W Thermal Resistance from Junction to Ambient 250 ℃/ W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ IC ICP * PC RθJA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 6 V Collector cut-off current ICBO VCB=20V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=500mA Collector-emitter saturation voltage * VCE(sat) Transition frequency fT Collector capacitance Cob 560 2700 IC=1A,IB=20mA 0.5 V VCE=10V,IC=10mA,f=100MHz 110 MHz VCB=10V, IE=0,f=1MHz 22 pF *Single pulse, PW=10ms CLASSIFICATION OF hFE Rank U V W Range 560~1200 820~1800 1200~2700 B,Apr,2012 Typical Characterisitics 2SD2153 5000 COMMON EMITTER Ta=25℃ 450uA 400uA Ta=100℃ 350uA 600 hFE 300uA 250uA 400 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 500uA 200uA 150uA 100uA 200 Ta=25℃ 1000 COMMON EMITTER VCE=6V IB=50uA 0 100 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE 8 1 10 (V) 100 COLLECTOR CURRENT IC 1000 VBEsat —— (mA) IC 1000 100 Ta=100℃ Ta=25℃ 10 β=50 1 1 10 IC IC Ta=100℃ β=50 1 10 (mA) 100 COLLECTOR CURRENT —— VBE 2000 Ta=25℃ 100 1000 2000 100 COLLECTOR CURRENT Cob/ Cib 1000 1000 IC —— VCB/ VEB f=1MHz IE=0/ IC=0 100 Cib C CAPACITANCE 100 T= a 25 ℃ T= a 10 0℃ (pF) (mA) Ta=25℃ IC COLLECTOR CURRENT 2000 (mA) 1000 10 Cob 10 COMMON EMITTER VCE=6V 1 0.0 0.3 0.6 0.9 1 0.1 1.2 1 BASE-EMMITER VOLTAGE VBE (V) fT 10 REVERSE VOLTAGE —— IC Pc 0.6 (MHz) 300 —— V 30 (V) Ta COLLECTOR POWER DISSIPATION Pc (W) 0.5 100 TRANSITION FREQUENCY fT 2000 1000 IC 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— IC hFE Static Characteristic 800 VCE=10V o Ta=25 C 10 5 10 COLLECTOR CURRENT 100 IC (mA) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150 B,Apr,2012